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    BUP 200 TRANSISTOR Search Results

    BUP 200 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    BUP 200 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUN DIODE

    Abstract: 400v 15A transistor module DIODE EVP 25 400v 15A igbt module 600v 30a IGBT CM15TF-24H
    Text: CM15TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 15 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E


    Original     		PDF CM15TF-24H Amperes/1200 BUN DIODE 400v 15A transistor module DIODE EVP 25 400v 15A igbt module 600v 30a IGBT CM15TF-24H

    BUN DIODE

    Abstract: BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000
    Text: CM30TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E


    Original     		PDF CM30TF-12H Amperes/600 BUN DIODE BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000

    600v 30a IGBT

    Abstract: BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A
    Text: CM30TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/1200 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M F R BwN EwN F R L K


    Original     		PDF CM30TF-24H Amperes/1200 600v 30a IGBT BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A

    BUN DIODE

    Abstract: 600v 20a IGBT igbt 600v 20a CM20TF-24H
    Text: CM20TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 20 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E


    Original     		PDF CM20TF-24H Amperes/1200 BUN DIODE 600v 20a IGBT igbt 600v 20a CM20TF-24H

    BUN DIODE

    Abstract: DIODE EVP 28 CM50TF-12H bup transistor
    Text: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R


    Original     		PDF CM50TF-12H Amperes/600 20-25kHz) BUN DIODE DIODE EVP 28 CM50TF-12H bup transistor

    buz 342 G

    Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
    Text: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m


    Original     		PDF O-220 O-218 346S2 BUO-218 buz 342 G DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    BUP314

    Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
    Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for


    Original     		PDF O-220 O-218 BUP314 BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding

    buz 350 equivalent

    Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
    Text: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11


    Original     		PDF O-220 O-218 buz 350 equivalent BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309

    thyristor Q 720 To220

    Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
    Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic


    Original     		PDF

    BUP162

    Abstract: 060-C1
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification BUP162 BUP SERIES TRANSISTORS ●FEATURES：•HIGH VOLTAGE CAPABILITY ●APPLICATION：■FLUORESCENT LAMP ■HIGH SPEED SWITCHING ■ELECTRONIC BALLAST ●Absolute Maximum Ratings（Tc=25°C） ■WIDE SOA


    Original     		PDF BUP162 O-251 BUP162 060-C1

    BUP142

    Abstract: Shenzhen SI Semiconductors
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification BUP142 BUP SERIES TRANSISTORS ●FEATURES：•HIGH VOLTAGE CAPABILITY ●APPLICATION: ■FLUORESCENT LAMP ■HIGH SPEED SWITCHING ■ELECTRONIC BALLAST ●Absolute Maximum Ratings（Tc=25°C） ■WIDE SOA


    Original     		PDF BUP142 O-251 BUP142 Shenzhen SI Semiconductors

    bup300

    Abstract: BUP200 200-BUP bup 200 transistor
    Text: SIEMENS IGBT Transistors • • • • • • • • • BUP 200 BUP 300 N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode


    OCR Scan     		PDF O-220 O-218 C67078-A4400-A2 C67078-A4203-A2 bup300 BUP200 200-BUP bup 200 transistor

    bup transistor

    Abstract: bup 200 transistor
    Text: SIEMENS BUP 200 IGBT High Power Switch Preliminary Data VCE = 1200 V /c = 1.5 A • • • • • • • • • N channel MOS input (voltage-controlled) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity


    OCR Scan     		PDF 7078-A 400-A bup transistor bup 200 transistor

    leistungstransistoren

    Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
    Text: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m


    OCR Scan     		PDF O-220 BUZ12A BUZ11S2 BUZ10S2 O-218 346S2 BUP410D leistungstransistoren bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314

    BUZ332A

    Abstract: BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345
    Text: Typenübersicht Selection Guide SIEM ENS SIPMOS Power Transistors N Channel Power Transistors s > 7 X s TO-220 AB ^D S ^ D S o n V Q 50 50 50 50 50 50 50 50 50 18m 28m 30m 35m 40m 55m 70m 0.1 0.12 60 60 60 60 60 18m 40m 70m 0.10 0.15 100 100 100 100 100


    OCR Scan     		PDF VUT05152 O-220 O-218 O-204 346S2 BUZ332A BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345

    TRANSISTOR JC

    Abstract: 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor
    Text: SIEMENS IGBT Transistors • • • • • • • • • BUP 304 N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode


    OCR Scan     		PDF O-218 C67078-A4200-A2 C67078-A4201-A2 TRANSISTOR JC 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor

    SIEMENS 1200

    Abstract: siemens dioden bup203 C67078-A4400-A2
    Text: SIEMENS IGBTLeistungstransistoren Bestellnummer Ordering code h LU Typ Type IGBT Power transistors A Gehäuse Package Bild Figure BUP 202 1000 12.0 C67078-A4401-A2 TO-220 AB 8b BUP 203 1000 21.0 C67078-A4402-A2 TO-220 AB 8b BUP 302 1000 12.0 C67078-A4205-A2


    OCR Scan     		PDF C67078-A4401-A2 C67078-A4402-A2 C67078-A4205-A2 C67078-A4202-A2 C67078-A4200-A2 O-220 O-218 SIEMENS 1200 siemens dioden bup203 C67078-A4400-A2

    LS303

    Abstract: BUP 303 bup203
    Text: SIEMENS IGBT Transistors N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode BYP 101 G E Type ^CE BUP 203 1000 V


    OCR Scan     		PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    7060a

    Abstract: TOP3 package bup transistor
    Text: S IE M E N S BUP 101 SIRET Siemens Ring Emitter Transistor VCE = 1000 V lc =15 A • • • N channel B rea kdo w n-p roo f Package: TO-218 AA TOP-3 ') Type Ordering code BUP 101 C 6 7060-A 1000-A 2 Maximum Ratings at T{ = 25 °C, unless otherw ise specified.


    OCR Scan     		PDF O-218 060-A 000-A 7060a TOP3 package bup transistor

    BUP 312

    Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
    Text: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B


    OCR Scan     		PDF BUZ10S2 BUZ11A BUZ11S2 BUZ12A O-220 O-218 BUP 312 buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203

    BUP 307

    Abstract: transistor 304 transistor d 304 bup transistor bup307 transistor 307 bup 200 transistor
    Text: SIEMENS BUP 304 BUP 307 IGBT High Power Switch VCE = 1000 V /1 2 0 0 V = 25 A lc • • • • • • • • • N channel MOS input (voltage-controlled) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity


    OCR Scan     		PDF O-218 7078-A 200-A 201-A 100ms BUP 307 transistor 304 transistor d 304 bup transistor bup307 transistor 307 bup 200 transistor

    siemens igbt BSM 25GD 100D

    Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
    Text: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11


    OCR Scan     		PDF O-220AB O-220 2x100 2x150 100GAL siemens igbt BSM 25GD 100D siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d