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    BUL6852D

    Abstract: NPN transistor Electronic ballast VCE1 power diode 10a
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL6852D ●产品特点：击穿电压稳定开关速度快 ●High Voltage, High Switching Speed. ●E-C 极间内置二极管


    Original     		PDF BUL6852D 200mA BUL6852D NPN transistor Electronic ballast VCE1 power diode 10a

    bul6852d

    Abstract: BUL6852DL
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL6852DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管


    Original     		PDF BUL6852DL bul6852d BUL6852DL