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    BUK9Y Price and Stock

    Nexperia BUK9Y19-55B,115

    MOSFET N-CH 55V 46A LFPAK56
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    DigiKey BUK9Y19-55B,115 Reel 42,000 1,500
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    Mouser Electronics BUK9Y19-55B,115 40,304
    • 1 $0.94
    • 10 $0.764
    • 100 $0.595
    • 1000 $0.44
    • 10000 $0.364
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    TME BUK9Y19-55B,115 1,355 1
    • 1 $0.726
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    Chip1Stop BUK9Y19-55B,115 Cut Tape 3,206
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    BUK9Y19-55B,115 1,500
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    EBV Elektronik BUK9Y19-55B,115 28,500 15 Weeks 1,500
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    New Advantage Corporation BUK9Y19-55B,115 9,000 1
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    Nexperia BUK9Y4R8-60E,115

    MOSFET N-CH 60V 100A LFPAK56
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUK9Y4R8-60E,115 Reel 16,500 1,500
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    TTI BUK9Y4R8-60E,115 Reel 1,500 1,500
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    New Advantage Corporation BUK9Y4R8-60E,115 3,000 1
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    Nexperia BUK9Y19-100E,115

    MOSFET N-CH 100V 56A LFPAK56
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUK9Y19-100E,115 Reel 15,000 1,500
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    Newark BUK9Y19-100E,115 Cut Tape 892 1
    • 1 $0.546
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    Rochester Electronics BUK9Y19-100E,115 2,295 1
    • 1 $0.4897
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    • 100 $0.4603
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    TME BUK9Y19-100E,115 1
    • 1 $0.995
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    Avnet Silica BUK9Y19-100E,115 4,500 15 Weeks 1,500
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    Chip1Stop BUK9Y19-100E,115 694
    • 1 $0.7598
    • 10 $0.6914
    • 100 $0.5999
    • 1000 $0.4785
    • 10000 $0.4785
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    EBV Elektronik BUK9Y19-100E,115 1,500 15 Weeks 1,500
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    New Advantage Corporation BUK9Y19-100E,115 3,000 1
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    • 10000 $0.58
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    Nexperia BUK9Y19-75B,115

    MOSFET N-CH 75V 48.2A LFPAK56
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUK9Y19-75B,115 Reel 13,500 1,500
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    TTI BUK9Y19-75B,115 Reel 9,000 1,500
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    • 10000 $0.464
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    TME BUK9Y19-75B,115 1,381 1
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    Avnet Silica BUK9Y19-75B,115 3,000 15 Weeks 1,500
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    New Advantage Corporation BUK9Y19-75B,115 3,000 1
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    Nexperia BUK9Y40-55B,115

    MOSFET N-CH 55V 26A LFPAK56
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUK9Y40-55B,115 Reel 9,000 1,500
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    • 10000 $0.26277
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    Newark BUK9Y40-55B,115 Cut Tape 802 1
    • 1 $0.811
    • 10 $0.701
    • 100 $0.484
    • 1000 $0.373
    • 10000 $0.373
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    Rochester Electronics BUK9Y40-55B,115 127,500 1
    • 1 $0.2379
    • 10 $0.2379
    • 100 $0.2236
    • 1000 $0.2022
    • 10000 $0.2022
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    EBV Elektronik BUK9Y40-55B,115 15 Weeks 1,500
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    New Advantage Corporation BUK9Y40-55B,115 37,500 1
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    Find more BUK9Y price and stock on Findchips.com

    BUK9Y Datasheets (146)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUK9Y07-30B NXP Semiconductors BUK9Y07-30B_RC_Thermal_Model Original PDF
    BUK9Y07-30B NXP Semiconductors N-channel TrenchMOS logic level FET Original PDF
    BUK9Y07-30B115 NXP Semiconductors NOW NEXPERIA BUK9Y07-30B - POWER Original PDF
    BUK9Y07-30B,115 NXP Semiconductors BUK9Y07-30B - BUK9Y07-30B - N-channel TrenchMOS logic level FET Original PDF
    BUK9Y09-40B NXP Semiconductors High reliability LFPAK MOSFETs for Automotive Power Applications Original PDF
    BUK9Y09-40B NXP Semiconductors BUK9Y09-40B_RC_Thermal_Model Original PDF
    BUK9Y09-40B NXP Semiconductors N-channel TrenchMOS logic level FET Original PDF
    BUK9Y09-40B,115 NXP Semiconductors BUK9Y09-40B - BUK9Y09-40B - N-channel TrenchMOS logic level FET Original PDF
    BUK9Y09-40B/C,115 NXP Semiconductors BUK9Y09-40B/C - N-channel TrenchMOS logic level FET, SOT669 Package, Standard Marking, Reel Pack, SMD, 7" Original PDF
    BUK9Y104-100B NXP Semiconductors BUK9Y104-100B_RC_Thermal_Model Original PDF
    BUK9Y104-100B NXP Semiconductors N-channel TrenchMOS logic level FET Original PDF
    BUK9Y104-100B,115 NXP Semiconductors BUK9Y104-100B - BUK9Y104-100B - N-channel TrenchMOS logic level FET Original PDF
    BUK9Y107-80E NXP Semiconductors BUK9Y107-80E Thermal design model Original PDF
    BUK9Y107-80E NXP Semiconductors N-channel TrenchMOS logic level FET Original PDF
    BUK9Y107-80EX NXP Semiconductors BUK9Y107-80E - BUK9Y107-80E - N-channel 80 V, 107 mOhm logic level MOSFET in LFPAK56 Original PDF
    BUK9Y11-30B NXP Semiconductors BUK9Y11-30B_RC_Thermal_Model Original PDF
    BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET Original PDF
    BUK9Y11-30B,115 NXP Semiconductors N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 59 A; Qgd (typ): 5.4 nC; RDS(on): 9@10V11@5V12@4.5V mOhm; Thermal Resistance: 2 K/W; VDSmax: 30 V; Package: SOT669 (LFPAK); Container: Tape reel smd Original PDF
    BUK9Y11-30B/C,115 NXP Semiconductors BUK9Y11-30B/C - N-channel TrenchMOS logic level FET, SOT669 Package, Standard Marking, Reel Pack, SMD, 7" Original PDF
    BUK9Y11-30B/C2,115 NXP Semiconductors BUK9Y11-30B/C2 - N-channel TrenchMOS logic level FET, SOT669 Package, Standard Marking, Reel Pack, SMD, 7" Original PDF
    ...

    BUK9Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUK9Y14-40B

    Abstract: No abstract text available
    Text: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This


    Original     		PDF BUK9Y14-40B BUK9Y14-40B

    Untitled

    Abstract: No abstract text available
    Text: Thermal RC network Foster SPICE thermal model Symbol Rth(j-mb) Parameter thermal resistance from junction to mounting base BUK9Y12-55B Conditions Cth1 4.181E-02 F Cth2 6.609E-03 F Cth3 1.555E-03 F Cth4 3.660E-04 F Cth5 8.612E-05 F Cth6 2.026E-05 F Cth7 4.768E-06 F


    Original     		PDF BUK9Y12-55B 660E-04 612E-05 026E-05 768E-06 122E-06 566E-01 520E-01 699E-02 150E-02

    Untitled

    Abstract: No abstract text available
    Text: Thermal RC network Foster SPICE thermal model Symbol Rth(j-mb) Parameter thermal resistance from junction to mounting base BUK9Y40-55B Conditions Cth1 1.131E-02 F Cth2 1.786E-03 F Cth3 4.474E-04 F Cth4 1.121E-04 F Cth5 2.808E-05 F Cth6 7.035E-06 F Cth7 1.763E-06 F


    Original     		PDF BUK9Y40-55B 121E-04 808E-05 035E-06 763E-06 416E-07 822E-01 843E-01 977E-02 344E-02

    Untitled

    Abstract: No abstract text available
    Text: Thermal RC network Foster SPICE thermal model Symbol Rth(j-mb) Parameter thermal resistance from junction to mounting base BUK9Y11-30B Conditions Cth1 2.589E-02 F Cth2 4.042E-03 F Cth3 9.598E-04 F Cth4 2.279E-04 F Cth5 5.413E-05 F Cth6 1.285E-05 F Cth7 3.053E-06 F


    Original     		PDF BUK9Y11-30B 279E-04 413E-05 285E-05 053E-06 249E-07 498E-01 148E-01 929E-02 473E-03

    BUK9Y104-100B

    Abstract: No abstract text available
    Text: BUK9Y104-100B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9Y104-100B BUK9Y104-100B

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK9Y3R5-40E N-channel 40 V, 3.8 mΩ logic level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y3R5-40E LFPAK56

    MOSFET 4604

    Abstract: 4604 mosfet
    Text: LF PA K 56 BUK9Y15-100E N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y15-100E LFPAK56 MOSFET 4604 4604 mosfet

    BUK9Y65-100E

    Abstract: No abstract text available
    Text: LF PA K 56 BUK9Y65-100E N-channel 100 V, 65 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y65-100E LFPAK56 BUK9Y65-100E

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK9Y12-100E N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y12-100E LFPAK56

    BUK9Y25-60E

    Abstract: marking 92560E
    Text: LF PA K 56 BUK9Y25-60E N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y25-60E LFPAK56 BUK9Y25-60E marking 92560E

    defect ppm

    Abstract: BUK9Y43-60E
    Text: LF PA K 56 BUK9Y43-60E N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y43-60E LFPAK56 defect ppm BUK9Y43-60E

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK9Y12-40E N-channel 40 V, 12 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y12-40E LFPAK56

    55b2

    Abstract: No abstract text available
    Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.


    Original     		PDF BUK9Y40-55B 55b2

    55B2

    Abstract: MBL798
    Text: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.


    Original     		PDF BUK9Y19-55B 55B2 MBL798

    Untitled

    Abstract: No abstract text available
    Text: Thermal RC network Foster SPICE thermal model Symbol Rth(j-mb) Parameter thermal resistance from junction to mounting base BUK9Y27-40B Conditions Cth1 1.131E-02 F Cth2 1.786E-03 F Cth3 4.474E-04 F Cth4 1.121E-04 F Cth5 2.808E-05 F Cth6 7.035E-06 F Cth7 1.763E-06 F


    Original     		PDF BUK9Y27-40B 121E-04 808E-05 035E-06 763E-06 416E-07 822E-01 843E-01 977E-02 344E-02

    55B3

    Abstract: BUK9Y19-55B Rev. 02 BUK9Y19-55B
    Text: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 03 — 29 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This


    Original     		PDF BUK9Y19-55B 55B3 BUK9Y19-55B Rev. 02 BUK9Y19-55B

    55B3

    Abstract: BUK9Y40-55B
    Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 03 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This


    Original     		PDF BUK9Y40-55B 55B3 BUK9Y40-55B

    BUK9Y53-100B

    Abstract: No abstract text available
    Text: BUK9Y53-100B N-channel TrenchMOS logic level FET Rev. 01 — 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.


    Original     		PDF BUK9Y53-100B BUK9Y53-100B

    BAT54A,215, Nexperia

    Abstract: No abstract text available
    Text: BUK9Y58-75B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9Y58-75B BAT54A,215, Nexperia

    Untitled

    Abstract: No abstract text available
    Text: BUK9Y19-75B N-channel TrenchMOS logic level FET Rev. 04 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9Y19-75B

    Untitled

    Abstract: No abstract text available
    Text: BUK9Y12-55B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9Y12-55B

    92140e

    Abstract: No abstract text available
    Text: LF PA K 56 BUK9Y21-40E N-channel 40 V, 21 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y21-40E LFPAK56 92140e

    915310E

    Abstract: No abstract text available
    Text: LF PA K 56 BUK9Y153-100E N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y153-100E LFPAK56 915310E

    Untitled

    Abstract: No abstract text available
    Text: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 01 — 3 September 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.


    Original     		PDF BUK9Y14-40B