Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BUK445 Search Results

    SF Impression Pixel

    BUK445 Price and Stock

    Philips Semiconductors BUK445600B

    POWERMOS TRANSISTOR MOSFET N Power Field-Effect Transistor, 2.2A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BUK445600B 442
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    BUK445 Datasheets (71)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK445-100 Philips Semiconductors Powermos Transistor Original PDF
    BUK445-100A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK445-100A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK445-100A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK445-100A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK445-100A Philips Semiconductors Power MOS Transistor Scan PDF
    BUK445-100B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK445-100B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK445-100B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK445-100B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK445-100B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK445-200 Philips Semiconductors Powermos Transistor Original PDF
    BUK445-200A Philips Semiconductors PowerMOS Transistor Original PDF
    BUK445-200A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUK445-200A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK445-200A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK445-200A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK445-200A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK445-200A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK445-200A/B Philips Semiconductors PowerMOS transistor Original PDF

    BUK445 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    BUK445-500B

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF 711062b BUK445-500B -SOT186 BUK445-500B

    BUK416-100BE

    Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
    Text: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93


    OCR Scan     		PDF BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A BUK451-100B BUK441-100B BUK451-100A BUK441-100A BUK452-100B BUK416-100BE 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHI LIP S/ DIS CR ETE ^ 5 3 7 3 1 D020400 h 5SE D BUK445-400A BUK445-400B PowerMOS transistor r - 37 - O ? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF D020400 BUK445-400A BUK445-400B BUK445 -400A -400B

    BUK445-600B

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • hbS3T31 003D575 Philips Semiconductors PowerMOS transistor PINNING -S O T 1 86 PIN BUK445-600B QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF hbS3T31 BUK445-600B -SOT186 BUK445-600B

    BUK445

    Abstract: K445 BUK445-500A BUK445-500B
    Text: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 DOSOmO =1 ■ PowerMOS transistor BUK445-500A BUK445-500B T -2 1 -0 1 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK445-500A BUK445-500B BUK445 -500A -500B K445 BUK445-500B

    BUK445

    Abstract: BUK445-500A BUK445-500B IE-04
    Text: N AMER PHI LI PS /DIS CR ETE 2SE D • ^53131 0020410 =1 ■ BUK445-500A BUK445-500B PowerMOS transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK445-500A BUK445-500B BUK445 -500A -500B BUK445-500A BUK445-500B IE-04

    Untitled

    Abstract: No abstract text available
    Text: -7 - 3 9 - 0 9 Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK 475-500B PowerMOS transistor Replaces BUK445-500A 'S MILIPS INrrRNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF 475-500B BUK445-500A

    V10-40 diode philips

    Abstract: V10-40 diode D02G BUK445-450B C25F SL 100 power transistor
    Text: N AMER PHILIPS/DISCRETE 25E D • bbSBTBl 0G204QS S ■ PowerMOS transistor BUK445-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bbS3T31 0G204QS BUK445-450B V10-40 diode philips V10-40 diode D02G BUK445-450B C25F SL 100 power transistor

    BUK445-600B

    Abstract: BUK445 BUK445-600A
    Text: N AMER P H I LI PS /D ISCR ET E 5SE D • ^53=131 0020415 Ô ■ PowerMOS transistor BUK445-600A BUK445-600B r-3 ^ -0 ? GENERAL DESCRIPTION SYMBOL CO O > N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK445-600A BUK445-600B BUK445 -600A -600B BUK445-600B BUK445-600A

    100-P

    Abstract: BUK445 BUK445-400A BUK445-400B
    Text: N AMER PHILIPS/DISCRETE 5SE ^53=531 D OOSDHOQ b BUK445-400A BUK445-400B PowerMOS transistor T - 3 7 -0 7 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic lull-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK445-400A BUK445-400B 37-0e) BUK445 -400A -400B 100-P

    TRANSISTOR SE 135

    Abstract: IE-02 BUK445-450B BUK445-450
    Text: N AMER P H I L I P S / D I S C R E T E 25E D • ^53^31 0G204QS S ■ PowerMOS transistor BUK445-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF bbS3T31 0G204QS BUK445-450B TRANSISTOR SE 135 IE-02 BUK445-450

    K445

    Abstract: BUK445 BUK445-500A BUK445-500B
    Text: N AMER PHI LIP S/ DI SC RE TE 2SE D • ^53=131 D O S O m O =1 ■ PowerMOS transistor BUK445-500A BUK445-500B T - 2 1 - 0 1 GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK445-500A BUK445-500B BUK445 -500A -500B K445

    30572

    Abstract: BUK445-500B TRANSISTOR na 44
    Text: b^E D N AMER PHILIPS/DISCRETE • bbSBSBl 0D3DS7G 7MÔ H A P X Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GENERAL DESCRIPTION N-channe! enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK445-500B -SOT186 yv-10 30572 BUK445-500B TRANSISTOR na 44

    BUK445

    Abstract: SO-020 417K BUK445-50A BUK445-50B
    Text: N AMER P H I L I P S / D I S C R E T E SSE D • bbSBiai 00SD3aS 3 ■ PowerMOS transistor BUK445-50A BUK445-50B T -3 7 -0 ? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK445-50A BUK445-50B T-37-0? BUK445 ID/100 SO-020 417K

    BUK445-400A

    Abstract: transistor 3707 BUK445 BUK445-400B
    Text: N AMER PHI LI PS /DIS CR ETE 55E D • 1^53*131 G020400 h PowerMOS transistor BUK445-400A BUK445-400B T -3 7 -0 ? N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF G020400 BUK445-400A BUK445-400B BUK445 -400A -400B BUK445-400A transistor 3707 BUK445-400B

    BUK445-600A

    Abstract: BUK445 envelope BUK445-600B tg 25 600b TG-11
    Text: N AUER P H I L I P S / D I S C R E T E 5SE D • 1^53=131 0 0 2 0 4 1 5 Ô ■ PowerMOS transistor BUK445-600A BUK445-600B QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF G02D415 BUK445-600A BUK445-600B BUK445 -600A -600B envelope tg 25 600b TG-11

    sd 431 transistor

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in


    OCR Scan     		PDF bb53T31 PINNING-SOT186 BUK445-100A/B BUK445 -100A -100B K445-100A/B IE-02 1E-03 1E-04 sd 431 transistor

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bRE D • bbS3R31 0D3QSbS 3fi0 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF bbS3R31 BUK445-400B bbS3T31 bbS3131

    BUK445

    Abstract: BUK445-60A BUK445-60B M/TRANSISTOR sf 249
    Text: N AMER PHILIPS/DISCRETE bTE D • ^53^31 QQ30SSD ^ST HIAPX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF QQ30SSD BUK445-60A/B PINNING-SOT186 BUK445 BUK445-60A BUK445-60B M/TRANSISTOR sf 249

    Philips transistor k1

    Abstract: BUK445-600B
    Text: N AMER PH IL IPS/DISCRETE bTE D • hbS3T31 003D575 2ST « A P X Philips Semiconductors Product Specification PowerMOS transistor PINNING -S O T 1 86 PIN QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF 003D575 BUK445-600B PINNING-SOT186 /V-12 Philips transistor k1

    BUK445-60A

    Abstract: BUK445 BUK445-60B 9ss 48 TRANSISTOR
    Text: N AMER PHI LIPS/DISCRETE bTE D • ^ 53^31 Q Q 30SSD ^ST HIAPX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK445-60A/B PINNING-SOT186 BUK445 BUK445-60A BUK445-60B 9ss 48 TRANSISTOR

    buk7530-55

    Abstract: mosfet-n SOT166 TOPFET buk7530
    Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263


    OCR Scan     		PDF 56-800A BUK446-800A BUK456-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1000B BUK446-1000B buk7530-55 mosfet-n SOT166 TOPFET buk7530