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    BU508DF TRANSISTOR Search Results

    BU508DF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BU508DF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BU508DF

    Abstract: No abstract text available
    Text: NPN BU508DF SILICON DIFFUSED POWER TRANSISTORS The BU508DF is NPN transistors in a fully isolated SOT199 envelope with integrated efficiency diode for the BU508DF . They are a high voltage, high speed switching and they are intended for use in horizontal deflexion


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    PDF BU508DF BU508DF OT199 BU508DF) OT199

    transistor 2SC2271

    Abstract: 2SC2271 NP-102 2SC2271 Sanyo BU508DF
    Text: BU508DF Ordering number : ENA0261 Preliminary SANYO Semiconductors DATA SHEET BU508DF NPN Triple Diffused Planar Silicon Transistor Horizontal Deflection Output Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings


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    PDF ENA0261 BU508DF A0261-4/4 transistor 2SC2271 2SC2271 NP-102 2SC2271 Sanyo BU508DF

    BU508DF

    Abstract: No abstract text available
    Text: BU508DF SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA


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    PDF BU508DF 16KHz 100mA BU508DF

    bu508df

    Abstract: IBM REV 2.8 all ic data BU508DF equivalent all ic datasheet in one pdf file curve tracer BU508AD
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.


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    PDF BU508DF OT199 OT199 bu508df IBM REV 2.8 all ic data BU508DF equivalent all ic datasheet in one pdf file curve tracer BU508AD

    bu508df

    Abstract: BU508DF equivalent data sheet bu508df
    Text: Inchange Semiconductor Product Specification BU508DF Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage,high speed ・With integrated efficiency diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers


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    PDF BU508DF bu508df BU508DF equivalent data sheet bu508df

    BU508DF

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification BU508DF Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers PINNING


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    PDF BU508DF BU508DF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV


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    PDF BU508F, BU508AF, BU508DF C-120 BU508F BU508DFRev230202E

    bu508af datasheet

    Abstract: BU508aF equivalent transistor bu508af equivalent BU508AF BU508DF BU508F
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV


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    PDF BU508F, BU508AF, BU508DF C-120 BU508F BU508DFRev230202E bu508af datasheet BU508aF equivalent transistor bu508af equivalent BU508AF BU508DF

    BU508DF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.


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    PDF BU508DF OT199 OT199 BU508DF

    BU508AF

    Abstract: BU508F bu508df bu508af datasheet transistor bu508af equivalent
    Text: Transys Electronics L I M I T E D NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage


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    PDF BU508F, BU508AF, BU508DF BU508AF BU508F bu508df bu508af datasheet transistor bu508af equivalent

    BU508AF

    Abstract: BU508DF BU508F
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV


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    PDF BU508F, BU508AF, BU508DF C-120 BU508F BU508DFRev230202E BU508AF BU508DF

    bu508af datasheet

    Abstract: BU508AF BU508DF BU508F
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV


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    PDF BU508F, BU508AF, BU508DF C-120 BU508F BU508DFRev230202E bu508af datasheet BU508AF BU508DF

    BST+ekr+1500

    Abstract: No abstract text available
    Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


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    PDF 2SC1413A 2SC1942 2SC4760 2SD1885 Bu208A Bu208D Bu508A SC-650 Bu508D BST+ekr+1500

    2sd1710

    Abstract: No abstract text available
    Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


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    PDF 2SC4760 SC-56 2SC514 Bu208A Bu208D 2-16D3A Bu508A SC-650 2sd1710

    BU508DF

    Abstract: BU508DF1 BU508AF transistor bu508af UBC023 bu50ba bu508af philips philips bu508af
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BU508AF; BU508DF High-voltage, high-speed switching npn transistors in a fu lly isolated SOT199 envelope w ith integrated efficiency diode fo r the BU508DF , prim arily intended for use in horizontal deflection


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    PDF BU508AF; BU508DF OT199 BU508DF) 711002b BU508DF BU508DF1 BU508AF transistor bu508af UBC023 bu50ba bu508af philips philips bu508af

    bu508df

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b=lE D bbS3T31 0D2fl2?D 325 IAPX BU508AF BU508DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistors in a fu lly isolated SOT199 envelope w ith integrated efficiency diode fo r the BU508DF , prim arily intended fo r use in horizontal deflection


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    PDF bbS3T31 BU508AF BU508DF OT199 BU508DF) bu508df

    bu508df

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.


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    PDF BU508DF OT199 16kHz bu508df

    BU508DF

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.


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    PDF BU508DF 16kHz OT199; BU508DF

    BU508DF

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.


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    PDF BU508DF OT199 BU508DF

    bu508df

    Abstract: BU 508A transistor BU508AF BU508DF1 bu50bdf BU508D BU508DF TRANSISTOR
    Text: N AMER PHILIPS/D I S C R E T E bHZ t> m bbsa'ni □□20270 32s BU508AF BU508DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed sw itching npn transistors in a fu lly isolated S O T Î9 9 envelope w ith integrated e ffic ie n c y d iode fo r the B U 5 0 8 D F , p rim a rily intended fo r use in h o rizo n ta l d e fle ctio n


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    PDF bbS3131 BU508AF BU508DF BU508DF) 7Z2I063 bu508df BU 508A transistor BU508DF1 bu50bdf BU508D BU508DF TRANSISTOR

    BU2506DF

    Abstract: 1500v 02xs t199 5A 800V BU508
    Text: 42 Power Devices High Speed, High Voltage Transistors in order of current rating (cont.) Package Outline V CE (sat) tf typ at lc lC(DC)<1> V CES V CEO max. at Iq/I b (Inductive Load) BUT12 BUT12A TO-220AB 8A 850V 1000V 400V 450V 1.5V at 6A/1.2A 1.5V at 5A/1 A


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    PDF BUT12 BUT12A O-220AB OT-93 OT-199 OT-186A OT-227B1 OT-227B1 200ns BU2506DF 1500v 02xs t199 5A 800V BU508

    BU25150X

    Abstract: BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX
    Text: Philips Semiconductors High-voltage and Switching NPN Power Transistors Types added to the range since the last issue of Handbook SC06 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 38 BU2520AW 203 BU2722AX 387


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    PDF BU505 BU505D BU505DF BU505F BU506 BU506D BU506DF BU506F BU508AF BU508AW BU25150X BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX

    BU2508-AX

    Abstract: BU506D, BU1506DX, BU2506DF BU2506DF BU4508AF BU4506DF BU4508DF BU4508DX BU2725DX BU2506DX BU4525AX
    Text: Philips Semiconductors Power Bipolar Transistors Index Types added to the range since the last issue of Handbook SC06 are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 42 BU2520AF 206 BU2722AF 391 BU505D 42 BU2520AW 212 BU2722AX


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    PDF BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF BU508AF BU508AW BU2508-AX BU506D, BU1506DX, BU2506DF BU2506DF BU4508AF BU4506DF BU4508DF BU4508DX BU2725DX BU2506DX BU4525AX

    BUT11AX

    Abstract: TO-220AB 220ab BU2506DF BU2506DX sot199 bu508df
    Text: Concise Catalogue 1996 Philips Semiconductors POWER SEMICONDUCTORS High-voltage and switching NPN power transistors HIGH-VOLTAGE AND SWITCHING NPN POWER TRANSISTORS type number package 42 18 40 50 BUX86P BUX84F BUX84 BUW84 SOT82 SOT 186 TO-220AB SOT82 20 32


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    PDF BUX86P BUX84F BUX84 BUW84 BUT211X BUT11F BUT11 BUT211 BUW11 BUT18 BUT11AX TO-220AB 220ab BU2506DF BU2506DX sot199 bu508df