BU2525
Abstract: BU2727 BU2525A BU2727AW
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
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BU2727AW
OT429
BU2525
BU2727
BU2525A
BU2727AW
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bu2525
Abstract: BU2525A BU2727A BY228
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
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BU2727A
bu2525
BU2525A
BU2727A
BY228
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BU2727AF
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU2727AF Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION
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BU2727AF
BU2727AF
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BU2727AX
Abstract: BU2525AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.
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BU2727AX
OT399
BU2727AX
BU2525AF
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BU2727AW
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2727AW DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 825V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color
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BU2727AW
100mA;
BU2727AW
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BU2727A
Abstract: BU2525A bu2525
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
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BU2727A
BU2727A
BU2525A
bu2525
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BU2727AW
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU2727AW Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION
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BU2727AW
O-247
O-247)
100mA
BU2727AW
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BU2727
Abstract: BU2727AF BU2525AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.
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BU2727AF
OT199
BU2727
BU2727AF
BU2525AF
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equivalent BU2725DX
Abstract: BU2725DX transistor bu2725dx BU2525AF bu2727d
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725DX
OT399
equivalent BU2725DX
BU2725DX
transistor bu2725dx
BU2525AF
bu2727d
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BU2525AF
Abstract: BU2725AX
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725AX
OT399
BU2525AF
BU2725AX
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bu2727d
Abstract: BU2725DF BU2527 BU2727 BU2525AF Philips Capacitor
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725DF
OT199
bu2727d
BU2725DF
BU2527
BU2727
BU2525AF
Philips Capacitor
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BU2725DX
Abstract: BU2525AF BU2527AFX transistor bu2725dx
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725DX
OT399
BU2725DX
BU2525AF
BU2527AFX
transistor bu2725dx
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Philips TdA3619
Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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ha 431 transistor
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.
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BU2727AX
ha 431 transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
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BU2727A
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bu2727aw
Abstract: BU2727
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCESpulses up to
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BU2727AW
bu2727aw
BU2727
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor In a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCESpulses up to 1700V.
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BU2727AF
Th5fS25
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
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BU2727AW
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.
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BU2727AX
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BU2508-AX
Abstract: BU506D, BU1506DX, BU2506DF BU2506DF BU4508AF BU4506DF BU4508DF BU4508DX BU2725DX BU2506DX BU4525AX
Text: Philips Semiconductors Power Bipolar Transistors Index Types added to the range since the last issue of Handbook SC06 are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 42 BU2520AF 206 BU2722AF 391 BU505D 42 BU2520AW 212 BU2722AX
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BU505
BU505D
BU505F
BU505DF
BU506
BU506D
BU506F
BU506DF
BU508AF
BU508AW
BU2508-AX
BU506D, BU1506DX, BU2506DF
BU2506DF
BU4508AF
BU4506DF
BU4508DF
BU4508DX
BU2725DX
BU2506DX
BU4525AX
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BU1508DX
Abstract: BU1508AX BU2708AF bu2525af BU2508-AX BU2720DF BU2520DX
Text: Philips Semiconductors Concise Catalogue 1996 High-voltage and switching NPN power transistors POWER SEMICONDUCTORS HIGH-VOLTAGE AND SWITCHING NPN POWER TRANSISTORS continued type number package 35 35 45 45 45 45 125 125 45 45 45 45 45 45 125 125 45 45 45
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BU1508AX
BU1508DX
BU2508AF
BU2508AX
BU2508DF
BU2508DX
BU2508A
BU2508D
BU2708AF
bu2525af
BU2508-AX
BU2720DF
BU2520DX
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BU25150X
Abstract: BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX
Text: Philips Semiconductors High-voltage and Switching NPN Power Transistors Types added to the range since the last issue of Handbook SC06 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 38 BU2520AW 203 BU2722AX 387
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BU505
BU505D
BU505DF
BU505F
BU506
BU506D
BU506DF
BU506F
BU508AF
BU508AW
BU25150X
BU2508-AX
BU2708AX
BUS08D
BUT12AF
BU2708DX
BU2725DX
BU2720DX
BU1508AX
BU1508DX
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BUT11A1
Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU4506AX BU2532 BU4506AF BU2720DX BU2527
Text: LEADED PACKAGES VcESM V 1500 tf lc lc (DC) sat. max. (A) 2.5 (A) 2 fas) 0.9 S0T82 S0T78 (T0220AB) S0T186A S0T186 (isolated S0T199 T0220AB) BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF S0T399 (TOP3D) SOT429 (T0247) SOT430 (TOP3L) TYPICAL APPLICATIONS
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S0T82
S0T78
T0220AB)
BU505
BU505D
BU506
BU506D
S0T186A
S0T186
BU505F
BUT11A1
Power Bipolar Transistors
bu2708dx
BU2725DX
BU1508AX
BU4506AX
BU2532
BU4506AF
BU2720DX
BU2527
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SOT399
Abstract: BU2720DX BU2708AX BU2708DX BU2720AX BU1507AX BU2725DX BU2515DX BU2532
Text: Philips Semiconductors High-voltage and Switching NPN Power Transistors Selection guide This selection guide lists the devices in the book, grouped in accordance with the collector-emitter voltage VCesm parameter and in order of the collector current (lc) parameter and power dissipation (Ptot). Types added to the range
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BUX86P
BUX84F
BUX84
BUW84
BUT211X
BUT11F
BUW11F
BUT211
BUT11
BUW11W
SOT399
BU2720DX
BU2708AX
BU2708DX
BU2720AX
BU1507AX
BU2725DX
BU2515DX
BU2532
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