BU2720AF
Abstract: BY228
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers up to 16 kHz. Designed to withstand VCES pulses up to 1700V.
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BU2720AF
OT199
BU2720AF
BY228
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22af
Abstract: IBM REV 2.8 Circuit sheet BU2720AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2720AF
OT199
22af
IBM REV 2.8 Circuit sheet
BU2720AF
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bu2720dx
Abstract: bu2720dx transistor BU2720DF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up
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BU2720DX
OT399
bu2720dx
bu2720dx transistor
BU2720DF
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BU2720DF
Abstract: BU2720AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2720DF
OT399
BU2720DF
BU2720AF
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SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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734TL
UWEB-MODEM-34
HCS412/WM
TLV320AIC10IPFB
100MB
NEON250
GA-60XM7E
BLK32X40
BLK32X42
SKIIP 33 nec 125 t2
skiip 613 gb 123 ct
RBS 6302 ericsson
SKIIP 513 gb 173 ct
THERMISTOR ml TDK 150M
pioneer PAL 010a
Project Report of smoke alarm using IC 555 doc
SKiip 83 EC 125 T1
ericsson RBS 6000 series INSTALLATION MANUAL
Ericsson Installation guide for RBS 6302
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BU2722AF
Abstract: BU2722AX BU2720AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.
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BU2722AX
OT399
BU2722AF
BU2722AX
BU2720AF
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BUT11APX equivalent
Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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BT148-600R
BT148-400R
BUT11APX equivalent
BU4508DX equivalent
2SD1876
2Sd1651 equivalent
BYS21-45
smd zener diode color band
2SD1878 data sheet
2SC5296 equivalent
BT151-600R
BUK98150 spice
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable for
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BU2722DX
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BU2722AF
Abstract: BU2722DF bu2720
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2722DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable for
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BU2722DF
BU2722AF
BU2722DF
bu2720
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BU2720AX
Abstract: BU2720AF IBM REV 2.8 Circuit sheet
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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Original
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BU2720AX
OT399
BU2720AX
BU2720AF
IBM REV 2.8 Circuit sheet
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BU2720DF
Abstract: BU2720D BU2720AF ICA26
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers up to 16 kHz. Designed to withstand
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BU2720DF
BU2720DF
BU2720D
BU2720AF
ICA26
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BU2722AF
Abstract: Philips Capacitor
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.
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BU2722AF
OT199
BU2722AF
Philips Capacitor
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Philips TdA3619
Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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BU2722AF
Abstract: BY228
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Suitable for operation up to 64 kHz, designed to withstand
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BU2722AF
BU2722AF
BY228
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BUT11APX equivalent
Abstract: BUT11A1 equivalent BU2725DX BU2527 BU506D, BU1506DX, BU2506DF BUT11APX BU4522AX BU2506DF equivalent bu2520dx BU2527DX
Text: DISCRETE SEMICONDUCTORS Selection guide Power Bipolar Transistors 1998 Dec 16 SOT82 SOT78 TO220AB SOT186 BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF SOT186A (isolated TO220AB) SOT199 SOT399 (TOP3D) SOT429 (TO247) SOT430 (TOP3L) TYPICAL APPLICATIONS
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O220AB)
OT186
BU505
BU505D
OT199
OT399
OT429
OT430
BU505F
BU505DF
BUT11APX equivalent
BUT11A1
equivalent BU2725DX
BU2527
BU506D, BU1506DX, BU2506DF
BUT11APX
BU4522AX
BU2506DF equivalent
bu2520dx
BU2527DX
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BU4508DX equivalent
Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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BT148-600R
BT148-400R
BU4508DX equivalent
BUT11APX equivalent
S0806MH
P0201MA TO92
BT136 application note
diode cross reference BYW96E
ct 2A05 diode
BU2508Dx equivalent
ST2001HI equivalent
BU2508DF equivalent
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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OCR Scan
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BU2720AF
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PDF
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BU2720AF
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers up to 16 kHz. Designed to withstand VCES pulses up to 1700V.
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OCR Scan
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BU2720AF
OT199;
711002b
BU2720AF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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OCR Scan
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BU2720AF
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BU2508-AX
Abstract: BU506D, BU1506DX, BU2506DF BU2506DF BU4508AF BU4506DF BU4508DF BU4508DX BU2725DX BU2506DX BU4525AX
Text: Philips Semiconductors Power Bipolar Transistors Index Types added to the range since the last issue of Handbook SC06 are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 42 BU2520AF 206 BU2722AF 391 BU505D 42 BU2520AW 212 BU2722AX
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BU505
BU505D
BU505F
BU505DF
BU506
BU506D
BU506F
BU506DF
BU508AF
BU508AW
BU2508-AX
BU506D, BU1506DX, BU2506DF
BU2506DF
BU4508AF
BU4506DF
BU4508DF
BU4508DX
BU2725DX
BU2506DX
BU4525AX
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BU1508DX
Abstract: BU1508AX BU2708AF bu2525af BU2508-AX BU2720DF BU2520DX
Text: Philips Semiconductors Concise Catalogue 1996 High-voltage and switching NPN power transistors POWER SEMICONDUCTORS HIGH-VOLTAGE AND SWITCHING NPN POWER TRANSISTORS continued type number package 35 35 45 45 45 45 125 125 45 45 45 45 45 45 125 125 45 45 45
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BU1508AX
BU1508DX
BU2508AF
BU2508AX
BU2508DF
BU2508DX
BU2508A
BU2508D
BU2708AF
bu2525af
BU2508-AX
BU2720DF
BU2520DX
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BU25150X
Abstract: BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX
Text: Philips Semiconductors High-voltage and Switching NPN Power Transistors Types added to the range since the last issue of Handbook SC06 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 38 BU2520AW 203 BU2722AX 387
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BU505
BU505D
BU505DF
BU505F
BU506
BU506D
BU506DF
BU506F
BU508AF
BU508AW
BU25150X
BU2508-AX
BU2708AX
BUS08D
BUT12AF
BU2708DX
BU2725DX
BU2720DX
BU1508AX
BU1508DX
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BUT11A1
Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU4506AX BU2532 BU4506AF BU2720DX BU2527
Text: LEADED PACKAGES VcESM V 1500 tf lc lc (DC) sat. max. (A) 2.5 (A) 2 fas) 0.9 S0T82 S0T78 (T0220AB) S0T186A S0T186 (isolated S0T199 T0220AB) BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF S0T399 (TOP3D) SOT429 (T0247) SOT430 (TOP3L) TYPICAL APPLICATIONS
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S0T82
S0T78
T0220AB)
BU505
BU505D
BU506
BU506D
S0T186A
S0T186
BU505F
BUT11A1
Power Bipolar Transistors
bu2708dx
BU2725DX
BU1508AX
BU4506AX
BU2532
BU4506AF
BU2720DX
BU2527
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SOT399
Abstract: BU2720DX BU2708AX BU2708DX BU2720AX BU1507AX BU2725DX BU2515DX BU2532
Text: Philips Semiconductors High-voltage and Switching NPN Power Transistors Selection guide This selection guide lists the devices in the book, grouped in accordance with the collector-emitter voltage VCesm parameter and in order of the collector current (lc) parameter and power dissipation (Ptot). Types added to the range
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BUX86P
BUX84F
BUX84
BUW84
BUT211X
BUT11F
BUW11F
BUT211
BUT11
BUW11W
SOT399
BU2720DX
BU2708AX
BU2708DX
BU2720AX
BU1507AX
BU2725DX
BU2515DX
BU2532
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