Untitled
Abstract: No abstract text available
Text: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.
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TIP30F
TIP30AF;
TIP30BF
T1P30CF;
TIP30DF
OT186
TIP29F,
TIP29AF,
TIP29BF,
TIP29CF
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BFW61
Abstract: No abstract text available
Text: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA
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BFW61
btj53T31
357T2
BFW61
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BA221
Abstract: ba221 d BB533
Text: N AMER PHILIPS/DISCRETE tTE D A • ^53131 Q02bim äb^ IAPX BA221 GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. QUICK REFERENCE DATA Continuous reverse voltage Repetitive peak forward current Storage tem perature
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Q02bim
BA221
DO-35
DO-35
BA221
ba221 d
BB533
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