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    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbSBT31 0030310 S • SSE D B U K 437-400A B U K 437-400B P o w e rM O S tra n s is to r T -3 7 -/5 T G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF bbSBT31 37-400A 437-400B BUK437 -400A -400B

    Untitled

    Abstract: No abstract text available
    Text: PowerMOS transistor_ BUZ72 N AMER PHILIPS/DISCRETE ObE D _ • bb53T31 0014430 7 ■ L r - 3 ^ - 1 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF BUZ72 bb53T31 O220AB; T-39-11 bbS3T31 0D14435 bt53T31