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    BST G 02 40 Search Results

    BST G 02 40 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    EVAL-LT8357-AZ Analog Devices LT8357 Bst Eval Bd, 4.5#20VIN, Visit Analog Devices Buy
    EVAL-LT8337-AZ Analog Devices LT8337 Demo|28V, 5A SS Bst w/ Visit Analog Devices Buy
    EVAL-LT8337-1-AZ Analog Devices LT8337-1 Demo|28V, 5A SS Bst w Visit Analog Devices Buy
    DC3008A Analog Devices LT8386 Demo|60V,3A SS Sync Bst Visit Analog Devices Buy
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    BST G 02 40 Price and Stock

    Kyocera AVX Components 0402ZK220GBSTR

    Silicon RF Capacitors / Thin Film 10V 22pF 2%Tol ThinF ilm 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 0402ZK220GBSTR 8,428
    • 1 $1.03
    • 10 $0.511
    • 100 $0.459
    • 1000 $0.32
    • 10000 $0.292
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    Kyocera AVX Components 04023J100GBSTR

    Silicon RF Capacitors / Thin Film 25V 10pF 2%Tol ThinF ilm 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 04023J100GBSTR 4,615
    • 1 $0.94
    • 10 $0.685
    • 100 $0.488
    • 1000 $0.344
    • 10000 $0.289
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    Kyocera AVX Components 0402YJ100GBSTR

    Silicon RF Capacitors / Thin Film 16V 10pF 2%Tol ThinF ilm 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 0402YJ100GBSTR 4,492
    • 1 $0.97
    • 10 $0.474
    • 100 $0.425
    • 1000 $0.288
    • 10000 $0.275
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    Kyocera AVX Components 0402ZK180GBSTR

    Silicon RF Capacitors / Thin Film 10V 18pF 2%Tol ThinF ilm 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 0402ZK180GBSTR 4,273
    • 1 $0.88
    • 10 $0.555
    • 100 $0.453
    • 1000 $0.298
    • 10000 $0.267
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    Kyocera AVX Components 0402ZJ120GBSTR

    Silicon RF Capacitors / Thin Film 10V 12pF 2%Tol ThinF ilm 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 0402ZJ120GBSTR 3,996
    • 1 $0.79
    • 10 $0.501
    • 100 $0.408
    • 1000 $0.32
    • 10000 $0.287
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    Find more BST G 02 40 price and stock on Findchips.com

    BST G 02 40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 128Mb SDRAM Ordering Information EM 48 8M 16 4 4 V T A – 55 L EOREX Logo EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : Power Blank : Standard L : Low power I : Industrial 40 41 42 43 46 48 F: PB free package Density 16M : 16 Mega Bits 8M : 8 Mega Bits


    Original     		PDF 128Mb 200MHz 183MHz 167MHz 143MHz 133MHz 125MHz 100MHz 16Bank 32Bank

    Untitled

    Abstract: No abstract text available
    Text: FACTSHEET F-200 SUPPLEMENT LCW–108–10–T–S–230 BST–108–09–G–D–318–RA .025"SQ TERMINAL STRIPS LCW, BST SERIES Mates with: SSW, SSQ, ESW, ESQ, IDSS LCW , IDSD (BST) TYPE STRIP Specifications: LCW, BST 1 NO. PINS PER ROW PLATING OPTION LEAD


    Original     		PDF F-200 1-800-SAMTEC-9

    ATMEL 706

    Abstract: 3012A scrolling led display atmel AT17 AT17A AT17LV010 AT94K ATDH2225 ATST94K ATSTK94
    Text: UART and 2-wire Interface Reconfiguration of the AT94K FPSLIC using an AT17 Series EEPROM Features • Use of the AVR External Interrupt Service C Routine to Initiate Data Transfer from the Graphic User Interface GUI of a Personal Computer • Use of the AVR C Routine with XY-modem Protocol to Receive Configuration Data from


    Original     		PDF AT94K AT94K AT17LV010 ATMEL 706 3012A scrolling led display atmel AT17 AT17A ATDH2225 ATST94K ATSTK94

    ATF1508AS

    Abstract: how to use JK flip flop in smart foot switch
    Text: Features • High-density, High-performance, Electrically-erasable Complex • • • • • • • • • • Programmable Logic Device – 128 Macrocells – 5 Product Terms per Macrocell, Expandable up to 40 per Macrocell – 84, 100, 160 Pins – 7.5 ns Maximum Pin-to-pin Delay


    Original     		PDF 0784O ATF1508AS how to use JK flip flop in smart foot switch

    Untitled

    Abstract: No abstract text available
    Text: Features • High-density, High-performance, Electrically-erasable Complex • • • • • • • • • • Programmable Logic Device – 128 Macrocells – 5 Product Terms per Macrocell, Expandable up to 40 per Macrocell – 84, 100, 160 Pins – 7.5 ns Maximum Pin-to-pin Delay


    Original     		PDF 0784N­

    1408F

    Abstract: AC100 ATF1508 ATF1508ASV ATF1508ASVL
    Text: Features • High-density, High-performance, Electrically-erasable • • • • • • • • • Complex Programmable Logic Device – 3.0V to 3.6V Operating Range – 128 Macrocells – 5 Product Terms per Macrocell, Expandable up to 40 per Macrocell


    Original     		PDF 1408F AC100 ATF1508 ATF1508ASV ATF1508ASVL

    Untitled

    Abstract: No abstract text available
    Text: Read/write head TN-CK40-H1147 • Rectangular, height 40 mm ■ Read/write head 5 positions ■ Plastic, PBT-GF30-VO ■ ■ ■ Every read/write head can communicate with a number of different TURCK data carriers. Powered and operated only via BL ident


    Original     		PDF TN-CK40-H1147 PBT-GF30-VO /S2503 30VDC ISO947220 D-45472 BSS-CP40 2013-07-12T17

    NT6TL128M32AQ-G1

    Abstract: NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2
    Text: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver


    Original     		PDF NT6TL128M32AI /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR NT6TL128M32AQ-G1 NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2

    w9412g6jh

    Abstract: w9412G6j DDR400 DDR500
    Text: W9412G6JH 2M x 4 BANKS × 16 BITS DDR SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W9412G6JH w9412g6jh w9412G6j DDR400 DDR500

    DDR400

    Abstract: DDR500
    Text: W9464G6JH 1M x 4 BANKS × 16 BITS DDR SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W9464G6JH DDR400 DDR500

    W9412G6

    Abstract: No abstract text available
    Text: W9412G6IH 2M x 4 BANKS × 16 BITS DDR SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W9412G6IH W9412G6

    Untitled

    Abstract: No abstract text available
    Text: HY5DU283222F 128M 4Mx32 DDR SDRAM HY5DU283222F This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0/May. 02


    Original     		PDF HY5DU283222F 4Mx32) HY5DU283222F HY6U22F 222Mhz 144ball 55Max

    p5A MARKING

    Abstract: transistor P9d p0102b scr Igt 1mA p9d sot23 P0115AL Marking 0E MARKING P5D rgk 13 1 11 005 01
    Text: P01xxxL  SENSITIVE GATE SCR FEATURES IT RMS = 0.2A VDRM = 100V to 400V Low IGT < 1µA max to < 200µA A G K DESCRIPTION The P01xxxL series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high volume


    Original     		PDF P01xxxL P01xxxL p5A MARKING transistor P9d p0102b scr Igt 1mA p9d sot23 P0115AL Marking 0E MARKING P5D rgk 13 1 11 005 01

    Untitled

    Abstract: No abstract text available
    Text: HY5DU283222F 128M 4Mx32 DDR SDRAM HY5DU283222F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0/May. 02


    Original     		PDF HY5DU283222F 4Mx32) 370mA 300mA 275/300MHz 200MHz 275MHz

    L013

    Abstract: MB81 MB81F12442-102 MB81F12442-75
    Text: FUJITSU SEMICONDUCTOR DATASHEET AE1E MEMORY CMOS 4 x 8 M x 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F12442-75/-102 CMOS 4-Bank x 8,388,608-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F12442 is a CMOS Synchronous Dynamic Random Access Memory {SDRAM containing


    OCR Scan     		PDF MB81F12442-75/-102 608-Word MB81F12442 L013 MB81 MB81F12442-102 MB81F12442-75

    SIEMENS BST

    Abstract: SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60
    Text: SIEMENS 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-50/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC


    OCR Scan     		PDF 16-Bit 3116165BSJ/BST 3118165BSJ/BST 3118165BSJ/BST-50) 3118165BSJ/BST-60) 165BSJ/BST SIEMENS BST SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60

    SIEMENS BST h 05 90

    Abstract: SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST h 05 60 SIEMENS BST P SIEMENS BST SIEMENS BST h 05 110 SIEMENS BST l 45 90 160BS SIEMENS BST G 03 60
    Text: SIEMENS 1M x 16-Bit Dynamic RAM 1 k & 4k Refresh Fast Page Mode HYB5116160BSJ-50/-60 HYB5116160BSJ-50/-60 HYB3116160BSJ/BST(L)-50/-60 HYB3118160BSJ/BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature


    OCR Scan     		PDF 16-Bit HYB5116160BSJ-50/-60 HYB3116160BSJ/BST HYB3118160BSJ/BST HYB5116160 HYB3116160 HYB5118160 HYB3118160 SIEMENS BST h 05 90 SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST h 05 60 SIEMENS BST P SIEMENS BST SIEMENS BST h 05 110 SIEMENS BST l 45 90 160BS SIEMENS BST G 03 60

    BST60

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117405BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		PDF TC5117405BSJ/BST-60/70 TC5117405BSJ/BST TC5117405BSJ/BST 300mil) DR16070295 SOJ26-P-300C) BST60

    Untitled

    Abstract: No abstract text available
    Text: F-205 S U P P LE M E N T iamte c B S T -1 2 0 - 1 0 - T - D - 2 3 0 - R A B S T -1 1 0 -1 0 - G - D - 3 1 8 - R A •samiec.con'l\e < .025» BOTTOM SHROUD STRIP M ates with: SSW, SSQ, BSW, ESW, ESQ, IDSS, IDSD 1 1 NO. PINS 11 PER ROW BST LEAD m PLATING •


    OCR Scan     		PDF F-205

    Untitled

    Abstract: No abstract text available
    Text: A N D 1781M S T / B S T 240 x 64 Dots Intelligent Graphics Displays The AND1781 MST/BST devices are compact, full dot matrix, with “white page” appearance, LCD modules that have an on­ board LCD controller T6963C and display memory (RAM). The AND1781 can display TEXT information, numerals,


    OCR Scan     		PDF D1781M AND1781 T6963C) 743E7ST

    1-800-SAMTEC-9

    Abstract: MIL-QQW-343
    Text: Maies with: BODY COLOR TSW, MTSW, TLW, MTLW, BST, LCW, DW, EW, ZW, HW, TSM Specifications: SNT m Insulator Material: „ f M Glass Filled Polyester Contact Material: Phosphor Bronze Current Rating: 2.5 A Operating Temp Range: -40°C to +90°C Contact Resistance:


    OCR Scan     		PDF SNT-100 MNT-120-BK-T 1-800-SAMTEC-9 MIL-QQW-343

    KTA1362

    Abstract: KIA8157AFN
    Text: SEMICONDUCTOR TECHNICAL DATA KIA8157AFN b ip o l a r l in e a r in t e g r a t e d c ir c u it HEADPHONE STEREO DRIVER 1.5V USE BUILT-IN BOOST SYSTEM POWER AMP. The KIA8157AFN is a headphone stereo driver IC designed for Low Voltage Operation (1.5V) which is suitable for stereo headphone radio and radio


    OCR Scan     		PDF KIA8157AFN KTA1362

    BST60

    Abstract: No abstract text available
    Text: TOSHIBA TC5116405BSJ/BST60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The T C 51 16405BSJ/BST is the new generation dynamic RAM organized 4,194,304 w ord by 4 bits. The T C 51 16405B SJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­


    OCR Scan     		PDF TC5116405BSJ/BST60 16405BSJ/BST 16405B TC5116405BSJ/BST 300mil) TC5116405BS J/BST-60 DR16060295 BST60

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 2 x 256K x 32 BIT SYNCHRONOUS GRAPHIC RAM M B 8 1 G 1 6 3 2 2 2 - 7 0 / - 8 0 / - 1 0 CMOS 2-Bank of 262,144-Word x 32 Bit Synchronous Graphic Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing


    OCR Scan     		PDF 144-Word MB81G163222 32-bit MB81G163222-70/-80/-10 DIAGRAM-24 MB81G163222-70-80-10 100-pin FPT-100P-M19)