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    BSS123 TRANSISTOR Search Results

    BSS123 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BSS123 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS123 spice

    Abstract: BSS123 BSS123-7 BSS123-7-F bss123 marking DS30366
    Text: SPICE MODEL: BSS123 BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low Gate Threshold Voltage SOT-23 Low Input Capacitance Fast Switching Speed A Low Input/Output Leakage High Drain-Source Voltage Rating B


    Original     		PDF BSS123 OT-23 com/datasheets/ap02007 BSS123-7-F. DS30366 BSS123 spice BSS123 BSS123-7 BSS123-7-F bss123 marking

    Untitled

    Abstract: No abstract text available
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 A · ·


    Original     		PDF BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, BSS123-7 3000/Tape com/datasheets/ap02007

    SOT23 K23

    Abstract: No abstract text available
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 A · ·


    Original     		PDF BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, BSS123-7 3000/Tape com/datasheets/ap02007 SOT23 K23

    BSS123 spice

    Abstract: K23 SOT23 marking K23 BSS123 K23 SOT23 MARKING BSS123-7 250dk SOT23 K23 bss123 MARKING CODE BSS123-7-F
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Also Available in Lead Free Version


    Original     		PDF BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, com/datasheets/ap02007 BSS123-7-F. DS30366 BSS123 spice K23 SOT23 marking K23 BSS123 K23 SOT23 MARKING BSS123-7 250dk SOT23 K23 bss123 MARKING CODE BSS123-7-F

    BSS123

    Abstract: BSS100 equivalent BSS100 bss100 transistor
    Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features BSS100: 0.22A, 100V. RDS ON = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V These N-Channel logic level enhancement mode power field


    Original     		PDF BSS100 BSS123 BSS100: BSS123: BSS123 BSS100 equivalent bss100 transistor

    DS30366

    Abstract: K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice
    Text: SPICE MODEL: BSS123 BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low Gate Threshold Voltage SOT-23 Low Input Capacitance Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 G E 0.45 0.60 H G 1.78 2.05


    Original     		PDF BSS123 OT-23 DS30366 K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice

    3V02

    Abstract: No abstract text available
    Text: – E ET L O BS BSS123 O –N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code


    Original     		PDF O-236AB* BSS123 O-236AB: BSS123 OT-23. 3V02

    SOT-23 marking 717

    Abstract: SAP SOT23 sot-23 MARKING CODE 718
    Text: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    Original     		PDF BSS123 O-236AB: O-236AB* OT-23. SOT-23 marking 717 SAP SOT23 sot-23 MARKING CODE 718

    SAP SOT23

    Abstract: marking SA sot-23 BSS123 BSS123 5A marking 8A sot-23 p-channel SOT-23 20V SOT-23 marking 2a to-236 TO-236AB sot-23 MARKING CODE GS 5
    Text: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    Original     		PDF BSS123 O-236AB: O-236AB* OT-23. SAP SOT23 marking SA sot-23 BSS123 BSS123 5A marking 8A sot-23 p-channel SOT-23 20V SOT-23 marking 2a to-236 TO-236AB sot-23 MARKING CODE GS 5

    BSS123

    Abstract: Philips RDS business MSB003 BP317 MBB692
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS123 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


    Original     		PDF BSS123 SC13b SCA54 137107/00/01/pp8 BSS123 Philips RDS business MSB003 BP317 MBB692

    BSS123

    Abstract: SC18 bss123 smd
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES BSS123 SYMBOL • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package QUICK REFERENCE DATA


    Original     		PDF BSS123 BSS123 SC18 bss123 smd

    BSS123 NXP

    Abstract: SMD TRANSISTOR A1 SOT23 bss123 smd BSS123,215
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES BSS123 SYMBOL • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package QUICK REFERENCE DATA


    Original     		PDF BSS123 BSS123 771-BSS123-T/R BSS123 NXP SMD TRANSISTOR A1 SOT23 bss123 smd BSS123,215

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES BSS123 SYMBOL • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package QUICK REFERENCE DATA


    Original     		PDF BSS123 BSS123

    BSS100

    Abstract: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123
    Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF BSS100 BSS123 BSS100: BSS123: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123

    BSS123 spice

    Abstract: "k23" sot-23 BSS123-7-F BSS123 K23 SOT-23 MARKING K23 SOT23
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Mechanical Data • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF BSS123 OT-23 J-STD-020C MIL-STD-202, DS30366 BSS123 spice "k23" sot-23 BSS123-7-F BSS123 K23 SOT-23 MARKING K23 SOT23

    BSS100

    Abstract: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92
    Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF BSS100 BSS123 BSS100: BSS123: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92

    BSS123

    Abstract: No abstract text available
    Text: BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance


    Original     		PDF BSS123 BSS123

    SOT23 K23

    Abstract: K23 SOT23 MARKING
    Text: BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 Max 0.37 0.51 B 1.20 1.40 C


    Original     		PDF BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, BSS123-7 3000/Tape com/datasheets/ap02007 DS30366 SOT23 K23 K23 SOT23 MARKING

    bss123 marking sa

    Abstract: No abstract text available
    Text: Supertex Inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S o n Order Number / Package ' d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* SA* 100V 6.0Q 0.5A BSS123 where * = 2-week alpha date code


    OCR Scan     		PDF BSS123 O-236AB* O-236AB: bss123 marking sa

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in ) 100V 6.0Q. 0.5A O rder N um ber / Package Product marking for TO-236AB: TO-236AB* SA* BSS123 where = 2-week alpha date code


    OCR Scan     		PDF BSS123 O-236AB: O-236AB*

    Philips MARKING CODE

    Abstract: sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23
    Text: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 BSN20W M8p M8t BSS84 SP BSS87 BSS123 BSS192 KA SA BST80 BST82 KM 02p


    OCR Scan     		PDF OT323 BSN20 BSN20W BSS84 BSS87 BSS123 BSS192 BST80 BST82 BST84 Philips MARKING CODE sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23

    transistor 45 f 123

    Abstract: No abstract text available
    Text: c m p r M - iii n SEM IC ONDUCTO R September 1996 tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF BSS100 BSS123 BSS100: BSS123: BSS123 transistor 45 f 123

    BSS123

    Abstract: No abstract text available
    Text: September 1996 F A IR C H IL D SEM IC ONDUCTO R tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF BSS100 BSS123 BSS100: BSS123:

    BSS123

    Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
    Text: tu N ational Semiconductor" J u ly 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF BSS100 BSS123 BSS100: BSS123: k501130 BSS123 bS0113D 85S100 TRANSISTOR BSS123 K5011