Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BSK211P Search Results

    BSK211P Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSK211P Infineon Technologies OptiMOS Power MOSFET, -20V, TSOP-8, Ron=75m Original PDF
    BSK211P Infineon Technologies OptiMOS-P Small-Signal-Transistor Original PDF

    BSK211P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3G80

    Abstract: BSK211P
    Text: BSK211P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature  Dual P-Channel  Enhancement mode -20 V R DS on 75 m ID  Super Logic Level (2.5 V rated) 150°C operating temperature  Avalanche rated  dv/dt rated -3.5 S1 1 8 D1


    Original     		PDF BSK211P SIS00070 Q67042-S4061 3G80 BSK211P

    BSK211P

    Abstract: No abstract text available
    Text: BSK211P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -20 V RDS on 75 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated


    Original     		PDF BSK211P SIS00070 Q67042-S4061 BSK211P

    BSK211P

    Abstract: No abstract text available
    Text: BSK211P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature  Dual P-Channel  Enhancement mode -20 V R DS on 75 m ID  Super Logic Level (2.5 V rated) 150°C operating temperature  Avalanche rated  dv/dt rated -3.5 S1 1 8 D1


    Original     		PDF BSK211P SIS00070 Q67042-S4061 BSK211P