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    IXXX200N60C3

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V GenX3TM IXXK200N60C3 IXXX200N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 200A 2.1V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C


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    20-60kHz IXXK200N60C3 IXXX200N60C3 IC110 O-264 062in. O-264) O-264 PLUS247 IXXX200N60C3 PDF

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    Abstract: No abstract text available
    Text: XPTTM 600V IGBTs GenX3TM IXXK200N60C3 IXXX200N60C3 VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 600V 200A 2.1V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


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    IXXK200N60C3 IXXX200N60C3 IC110 20-60kHz O-264 200N60C3 PDF

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    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V IGBTs GenX3TM IXXK300N60C3 IXXX300N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 300A 2.0V 82ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C


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    20-60kHz IXXK300N60C3 IXXX300N60C3 IC110 O-264 062in. O-264) O-264 PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM IXXH100N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


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    IXXH100N60C3 IC110 20-60kHz O-247 100N60C3 0-10-A PDF

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    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 650V IGBTs GenX4TM IXXK160N65C4 IXXX160N65C4 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 650V 160A 2.1V 30ns TO-264 (IXXK) G C E Symbol Test Conditions Maximum Ratings


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    IXXK160N65C4 IXXX160N65C4 IC110 20-60kHz O-264 160N65C4 PDF

    100n60

    Abstract: 100N60C3 IXXH100N60C3
    Text: Advance Technical Information XPTTM 600V GenX3TM IXXH100N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


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    IXXH100N60C3 IC110 20-60kHz O-247 100N60C3 0-10-A 100n60 IXXH100N60C3 PDF

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    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V GenX3TM VCES IC110 VCE sat tfi(typ) IXXH100N60C3 Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


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    IC110 IXXH100N60C3 20-60kHz O-247 100N60C3 0-10-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V GenX3TM VCES IC110 VCE sat tfi(typ) IXXK200N60C3 IXXX200N60C3 Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 200A 2.1V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C


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    IC110 IXXK200N60C3 IXXX200N60C3 20-60kHz O-264 200N60C3 PDF

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    Abstract: No abstract text available
    Text: IXXK100N60C3H1 IXXX100N60C3H1 XPTTM 600V IGBTs GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


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    IXXK100N60C3H1 IXXX100N60C3H1 20-60kHz O-264 IF110 100N60C3 0-10-A PDF

    100N60C3

    Abstract: IXXK100N60C3H1 IXXX100N60C3H1 IF110 PLUS247 100n60
    Text: Preliminary Technical Information IXXK100N60C3H1 IXXX100N60C3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C


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    IXXK100N60C3H1 IXXX100N60C3H1 20-60kHz O-264 IF110 100N60C3 0-10-A IXXK100N60C3H1 IXXX100N60C3H1 IF110 PLUS247 100n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXXK100N60C3H1 IXXX100N60C3H1 Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C


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    IXXK100N60C3H1 IXXX100N60C3H1 20-60kHz O-264 IF110 Indu100 100N60C3 0-10-A PDF

    LM33M

    Abstract: No abstract text available
    Text: LM337M Three-Terminal Adjustable Output Negative Voltage Regulator The LM337M is an adjustable three–terminal negative voltage regulator capable of supplying in excess of 500 mA over an output voltage range of –1.2 V to –37 V. This voltage regulator is exceptionally easy to use and


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    LM337M LM33M PDF

    LM337 TO-92

    Abstract: IC LM 351 LM337/KA741 equivalent LM337 TO92
    Text: LM337 Three-Terminal Adjustable Output Negative Voltage Regulator The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and


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    LM337 LM337 TO-92 IC LM 351 LM337/KA741 equivalent LM337 TO92 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with


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    MT8870D/MT8870D-1 MT8870C/MT8870C-1 MT8870DE/DE-1 MT8870DS/DS-1 MT8870DN/DN-1 MT8870D/MT8870D-1 PDF

    MT8870D

    Abstract: MT8870D-1
    Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with


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    MT8870D/MT8870D-1 MT8870C/MT8870C-1 MT8870DE/DE-1 MT8870DS/DS-1 MT8870DN/DN-1 MT8870D/MT8870D-1 MT8870D MT8870D-1 PDF

    TDA 1060 f

    Abstract: MT8870de dtmf decoder MT8870D MT8870D-1
    Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with


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    MT8870D/MT8870D-1 MT8870C/MT8870C-1 MT8870DE/DE-1 MT8870DS/DS-1 MT8870DN/DN-1 MT8870D/MT8870D-1 TDA 1060 f MT8870de dtmf decoder MT8870D MT8870D-1 PDF

    tda 2095

    Abstract: MT8870D MT8870D-1
    Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with


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    MT8870D/MT8870D-1 MT8870C/MT8870C-1 MT8870DE/DE-1 MT8870DS/DS-1 MT8870DN/DN-1 MT8870D/MT8870D-1 tda 2095 MT8870D MT8870D-1 PDF

    tda 2032

    Abstract: MT8870de dtmf decoder MT8870D MT8870D-1 TDA 1060 f zarlink MT8870DE
    Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with


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    MT8870D/MT8870D-1 MT8870C/MT8870C-1 MT8870DE/DE-1 MT8870DS/DS-1 MT8870DN/DN-1 MT8870D/MT8870D-1 tda 2032 MT8870de dtmf decoder MT8870D MT8870D-1 TDA 1060 f zarlink MT8870DE PDF

    tda 2095

    Abstract: MT8870DN/DN-1 MT8870D MT8870D-1
    Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with


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    MT8870D/MT8870D-1 MT8870C/MT8870C-1 MT8870DE/DE-1 MT8870DS/DS-1 MT8870DN/DN-1 MT8870D/MT8870D-1 tda 2095 MT8870D MT8870D-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISO2-CMOS MT8870D/MT8870D-1 Integrated DTMF Receiver Features • • • • • • • • ISSUE 5 Complete DTMF Receiver Low power consumption Internal gain setting amplifier Adjustable guard time Central office quality Power-down mode Inhibit mode Backward compatible with


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    MT8870D/MT8870D-1 MT8870C/MT8870C-1 MT8870DE/DE-1 MT8870DS/DS-1 MT8870DN/DN-1 MT8870D/MT8870D-1 PDF

    datasheet 6802 processor motorola

    Abstract: 68HC11 80C51 MT8870 MT8889C MT8889CE MT8889CN MT8889CS
    Text: MT8889C Integrated DTMF Transceiver with Adaptive Micro Interface Features • • • • • • DS5433 March 2001 Ordering Information MT8889CE 20 Pin Plastic DIP MT8889CS 20 Pin SOIC MT8889CN 24 Pin SSOP -40°C to +85°C Central office quality DTMF transmitter/


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    MT8889C DS5433 MT8889CE MT8889CS MT8889CN -30dBm MT8870 datasheet 6802 processor motorola 68HC11 80C51 MT8889C MT8889CE MT8889CN MT8889CS PDF

    tda 2095

    Abstract: DTMF mt8870 datasheet 6802 processor motorola microprocessors with mt8889 68HC11 80C51 MT8870 MT8889C MT8889CE MT8889CN
    Text: MT8889C Integrated DTMF Transceiver with Adaptive Micro Interface Features • • • • • • DS5433 March 2001 Ordering Information MT8889CE 20 Pin Plastic DIP MT8889CS 20 Pin SOIC MT8889CN 24 Pin SSOP -40°C to +85°C Central office quality DTMF transmitter/


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    MT8889C DS5433 MT8889CE MT8889CS MT8889CN -30dBm MT8870 tda 2095 DTMF mt8870 datasheet 6802 processor motorola microprocessors with mt8889 68HC11 80C51 MT8889C MT8889CE MT8889CN PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF