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    BS62LV2009DI Search Results

    BS62LV2009DI Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS62LV2009DI Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 8 bit Original PDF
    BS62LV2009DI-55 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 8 bit Original PDF
    BS62LV2009DI-70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 8 bit Original PDF
    BS62LV2009DIG55 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 8 bit Original PDF
    BS62LV2009DIG70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 8 bit Original PDF
    BS62LV2009DIP55 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 8 bit Original PDF
    BS62LV2009DIP70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 8 bit Original PDF

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    BS62LV2009

    Abstract: BS62LV2009DC BS62LV2009DI BS62LV2009SC BS62LV2009STC BS62LV2009STI BS62LV2009TC BS62LV2009TI BS62LV2016SI TSOP-32
    Text: Very Low Power/Voltage CMOS SRAM 256K X 8 bit BSI BS62LV2009 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 22mA @55ns operating current I -grade: 23mA (@55ns) operating current C-grade: 17mA (@70ns) operating current


    Original     		PDF BS62LV2009 BS62LV2009 R0201-BS62LV2009 BS62LV2009DC BS62LV2009DI BS62LV2009SC BS62LV2009STC BS62LV2009STI BS62LV2009TC BS62LV2009TI BS62LV2016SI TSOP-32