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    BS616UV2021DI Search Results

    BS616UV2021DI Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BS616UV2021DI Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Original PDF
    BS616UV2021DI10 Brilliance Semiconductor 10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8-Bit switchable Original PDF
    BS616UV2021DI70 Brilliance Semiconductor 70ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8-Bit switchable Original PDF

    BS616UV2021DI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BGA-48-0608

    Abstract: BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI
    Text: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616UV2021 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0 ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current


    Original     		PDF BS616UV2021 120ns 150ns R0201-BS616UV2021 -40oC BGA-48-0608 BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI

    BGA-48-0608

    Abstract: BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616UV2021 „ DESCRIPTION „ FEATURES The BS616UV2021 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide


    Original     		PDF BS616UV2021 BS616UV2021 70/100ns -40oC R0201-BS616UV2021 BGA-48-0608 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI