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    BS616UV2019DC Search Results

    BS616UV2019DC Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616UV2019DC Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF
    BS616UV2019DC-10 Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF
    BS616UV2019DC85 Brilliance Semiconductor Ultra Low Power CMOS SRAM 128K x 16 bit Original PDF
    BS616UV2019DC-85 Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF
    BS616UV2019DCG10 Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF
    BS616UV2019DCG85 Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF
    BS616UV2019DCP10 Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF
    BS616UV2019DCP85 Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 128K x 16-Bit Original PDF

    BS616UV2019DC Datasheets Context Search

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    BS616UV2019DC

    Abstract: BS616UV2019DI BS616UV2019TC BS616UV2019TI TSOP1-48 BGA-48-0608 BS616UV2019 BS616UV2019AC BS616UV2019AI
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V Vcc_min.=1.65V at 25oC • Ultra low power consumption : Vcc = 2.0V C-grade: 8mA (Max.) operating current I -grade: 10mA (Max.) operating current


    Original     		100ns BS616UV2019 x8/x16 TSOP1-48PIN R0201-BS616UV2019 BS616UV2019DC BS616UV2019DI BS616UV2019TC BS616UV2019TI TSOP1-48 BGA-48-0608 BS616UV2019 BS616UV2019AC BS616UV2019AI PDF

    BGA-48-0608

    Abstract: BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019TC BS616UV2019TI
    Text: Ultra Low Power CMOS SRAM 128K X 16 bit BS616UV2019 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V y Ultra low power consumption : VCC = 2.0V


    Original     		BS616UV2019 100ns x8/x16 R0201-BS616UV2019 BGA-48-0608 BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019TC BS616UV2019TI PDF

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Power CMOS SRAM 128K X 16 bit BS616UV2019 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V


    Original     		BS616UV2019 100ns x8/x16 R0201-BS616UV2019 PDF

    BGA-48-0608

    Abstract: BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019DI BS616UV2019TC BS616UV2019TI TSOP1-48
    Text: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V Vcc_min.=1.65V at 25oC • Ultra low power consumption : Vcc = 2.0V C-grade: 8mA (Max.) operating current I -grade: 10mA (Max.) operating current


    Original     		100ns BS616UV2019 x8/x16 TSOP1-48PIN R0201-BS616UV2019 BGA-48-0608 BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019DI BS616UV2019TC BS616UV2019TI TSOP1-48 PDF

    BS616UV2019

    Abstract: BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019TC BS616UV2019TI
    Text: Ultra Low Power CMOS SRAM 128K X 16 bit BS616UV2019 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V


    Original     		BS616UV2019 100ns x8/x16 R0201-BS616UV2019 BS616UV2019 BS616UV2019AC BS616UV2019AI BS616UV2019DC BS616UV2019TC BS616UV2019TI PDF