BS0112TI Search Results

27S12

Abstract: 27128 memory nsc600
Contextual Info: 3IE DApril 1989 V 6 - / 3 - Z .J 27C64 65,536-Bit 8,192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 Is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applica­ tions where fast turnaround, pattern experimentation and

93C86L

Abstract: SC86A
Contextual Info: S e m i c o n d u c t o r September 1995 NM93C86LZ/C86ALZ 16,384-Bit Serial Interface, Low Voltage, Zero Power CMOS EEPROM MICROWIRE Synchronous Bus General Description Features The NM93C86LZ/C86ALZ is 16,384 bits of CMOS non-vol­ atile, electrically erasable memory available in either 1024

Contextual Info: 57E D bSOllEb GGbb431 351 H N S C 3 NATL SEtllCOND MEMORY " F lS -A S -O S DS78C120/DS88C120 Dual CMOS Compatible Differential Line Receiver General Description Features The DS78C120 and DS88C120 are high performance, dual differential, CMOS compatible line receivers for both bal­

dp8304

Abstract: B794 DP8307A DP8307AN generator speed control circuit 24v input dp7304b
Contextual Info: DP83Û7A 33 National ÆÆ Semiconductor DP8307A 8-Bit TRI-STATE Bidirectional Transceiver Inverting General Description Features The DP8307A is a high speed Schottky 8-bit TRI-STATE bidirectional transceiver designed to provide bidirectional drive for bus oriented microprocessor and digital communi­