3852r
Abstract: 2N5530 2N5529 SOLITRON 10MHZ BR100E BR100F BR101E BR101F
Text: _8 3 6 8 6 0 2 S O L I T R O N D E V I C E S _ üb INC 66C 0 1 9 3 0 D ’T ' 3 3 - l l _ _ RADIATION RESISTANT NrN S/UÜÜN POWER TRANSISTORS DE|fl3 bfl bQ g fi I ' " ' Ir BR100E BR100F* BR101E BR101F* NPN SILICON POWER TRANSISTORS
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33-il_
BR100E
BR100F*
BR101E
BR101F*
3x10l4n/Cm2
T0-61/I
BR100E
BR101E
3852r
2N5530
2N5529
SOLITRON
10MHZ
BR100F
BR101F
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2N5417
Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
2N5417
A 14U
UD3008
2N5292
BD263
BD264A
CI44
transistor t05
BC412
KIS434
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PNP transistor A705
Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
PNP transistor A705
2N1620
2sc768
2N1619
UD3008
BD264
MHT6414
SOT1156
MHT6311
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BC507
Abstract: l18b 5.1 channel producing ic BC180 bc507 transistor TIS107 ME60 PET1075 PET1075A PET6003
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
BC507
l18b
5.1 channel producing ic
BC180
bc507 transistor
TIS107
ME60
PET1075
PET1075A
PET6003
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2n1620
Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E
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BF125
Abstract: PET8002 l18b GW 9n BFW74 BFW75 BFW76 BFX53 T046 ML101A
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
BF125
PET8002
l18b
GW 9n
BFW74
BFW75
BFW76
BFX53
T046
ML101A
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2SD45
Abstract: SOT1156 2sc768 2N1210-1 2N1619 2N1620 SDT1152 MHT6311 MHT6312 MHT6313
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT
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NPN110.
SDT1156
SDT1157
400mS
SDT1158
SDT1159
400ml
SDT1160
SDT1161
2SD45
SOT1156
2sc768
2N1210-1
2N1619
2N1620
SDT1152
MHT6311
MHT6312
MHT6313
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Y220b
Abstract: 2N3836 BD264 BD263 BD264A NS9726 BD265 UD3008 2N3837 2N5417
Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
2N3836
BD264
BD263
BD264A
NS9726
UD3008
2N3837
2N5417
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2N1620
Abstract: 2N1619 2SC5220 SDT1152 SOT1156
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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tea 1601 t
Abstract: l18b PT23 tea 1601 UD3008 2N2719 ME2001
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BD264
Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C
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028A5
Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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80 amp 30v npn darlington
Abstract: UD3008 transistor 2sc115 bd107a BD265A A515 B3570 B3571 BD106 HFE-10
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
80 amp 30v npn darlington
UD3008
transistor 2sc115
bd107a
A515
B3570
B3571
BD106
HFE-10
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2SC736
Abstract: BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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NPN110.
BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
2SC736
BLY25
BLY26
CP430
2N5276
TA-D93
ML101B
TAB101
NS9726
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2SC631
Abstract: 2SC632 FV918 2N1082 transistor 2sC632 BCY50 2N7481 a608 2SC402A ML102B
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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BD265
BD265A
BD265B
Y220b
BD265L
BD266L
BD267L
2SC631
2SC632
FV918
2N1082
transistor 2sC632
BCY50
2N7481
a608
2SC402A
ML102B
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BD264A
Abstract: 2N3836 2N5417 BD263 BSX86 ML101B SC1625
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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Untitled
Abstract: No abstract text available
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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