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    BR 9014 Search Results

    BR 9014 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    9014DM/B Rochester Electronics LLC 9014DM/B Visit Rochester Electronics LLC Buy
    ISL9014AIRKFZ Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
    ISL9014IRBJZ Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR, DFN, /Tube Visit Renesas Electronics Corporation
    ISL9014AIRCJZ Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
    ISL9014IRKNZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR, DFN, /Reel Visit Renesas Electronics Corporation

    BR 9014 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor 9014

    Abstract: BR 9014 BR 9014 c transistor 9014 c BR 9014 transistor "transistor" 9014 BR 9014 C TRANSISTOR C 9014 transistor 9014 to-92 data sheet transistor 9014 NPN
    Text: NPN SILICON TRANSISTOR 9014 TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V BR CBO : 50 ELECTRICAL CHARACTERISTICS Parameter 2.BASE 1 2 3 3.COLLECTOR Tamb=25 unless otherwise specified


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    100mA, 30MHz transistor 9014 BR 9014 BR 9014 c transistor 9014 c BR 9014 transistor "transistor" 9014 BR 9014 C TRANSISTOR C 9014 transistor 9014 to-92 data sheet transistor 9014 NPN PDF

    BR 9014

    Abstract: BR 9014 c BR 9014 transistor transistors BR 9014 TRANSISTOR 9014 S9014 V. 9014 c 9014
    Text: TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. BASE 0.4 W (Tamb=25℃) 3. COLLECTOR Collector current 0.1 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range


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    S9014 BR 9014 BR 9014 c BR 9014 transistor transistors BR 9014 TRANSISTOR 9014 S9014 V. 9014 c 9014 PDF

    BR 9014

    Abstract: BR 9015 BR 9014 C transistor 9015 c 9015 transistor data sheet transistor 9014 transistor 9015 9015 pnp pnp transistor 9015 9015 TO-92
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. 1. Emitter 2. Base 3. Collector


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    br 9015

    Abstract: pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


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    100mA, br 9015 pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C PDF

    BR 9015

    Abstract: transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


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    100mA, BR 9015 transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor PDF

    BR 9014

    Abstract: BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


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    100mA, BR 9014 BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015 PDF

    transistor c 9015

    Abstract: BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


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    100mA, transistor c 9015 BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92 PDF

    BR 9014

    Abstract: BR 9014 transistor 9014 C 9014 transistor transistor 9014 npn TRANSISTOR c 9014 ST 9014 C BR 9014 c V. 9014 c transistor 9014 C npn
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


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    BR 9014

    Abstract: BR 9014 transistor BR 9014 C ST 9014 C C 9014 transistor st 9014 TRANSISTOR c 9014 TRANSISTOR 9014 V. 9014 c 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


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    BR 9014

    Abstract: BR 9014 transistor ST 9014 C BR 9014 c C 9014 transistor BR 9014 C TRANSISTOR V. 9014 c transistor 9014 C npn 9014 TRANSISTOR c 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


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    BR 9014 transistor

    Abstract: BR 9014 TRANSISTOR 9014 C 9014 transistor ST 9014 C BR 9014 C 9014 TRANSISTOR c 9014 st 9014 NPN 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


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    Schottky barrier sot-23 40V

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 9014xLT1 THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


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    OD-123+ FM120-M+ 9014xLT1 FM1200-M OD-123H FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH Schottky barrier sot-23 40V PDF

    BR 9014

    Abstract: BR 9014 C AK P12
    Text: SC73C1402 4 MCU MASK SC73C1402 CMOS 4 MCU SSOP-20-300-0.65 SC73C1402 24 SOP-20-300-1.27 20 SSOP-24-300-0.65 * 2.0V – 4.0V * < 1µA * ROM 2k x 9 bits * RAM * * SOP-24-375-1.27 1k 16 × 4 bits 10 20 15 / I/O P53 * fosc 300KHz ~ 2MHz 2MHz SOP-24-375-1.27


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    SC73C1402 SSOP-20-300-0 OP-20-300-1 SSOP-24-300-0 OP-24-375-1 300KHz SC73C1402B BR 9014 BR 9014 C AK P12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1015 IRFBC30S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRFBC30S Low-profile through-hole (IRFBC30L) Available in Tape & Reel (IRFBC30S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D


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    IRFBC30S/L IRFBC30S) IRFBC30L) 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91016A IRFBC40S/L HEXFET Power MOSFET l l l l l l l Surface Mount IRFBC40S Low-profile through-hole (IRFBC40L) Available in Tape & Reel (IRFBC40S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 600V


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    1016A IRFBC40S/L IRFBC40S) IRFBC40L) 08-Mar-07 PDF

    3 pin crystal oscillator 3,64mhz

    Abstract: SC-73 alu project 4BIT Silan label
    Text: SC73C1402 4-BIT MCU FOR REMOTE CONTROLLER MASK TYPE DESCRIPTION SC73C1402 is one of Silan’ s 4-bit CMOS single-chip microcontrollers for infrared remote control transmitters (IRCTs). It can SOP-20-300-1.27 be implemented in various IRCT circuits by mask option.


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    SC73C1402 SC73C1402 OP-20-300-1 OP-20-375-1 SSOP-20-300-0 300KHz 3 pin crystal oscillator 3,64mhz SC-73 alu project 4BIT Silan label PDF

    AN-994

    Abstract: IRFBC30 IRFBC30L IRFBC30S
    Text: PD - 9.1015 IRFBC30S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRFBC30S Low-profile through-hole (IRFBC30L) Available in Tape & Reel (IRFBC30S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D


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    IRFBC30S/L IRFBC30S) IRFBC30L) 12-Mar-07 AN-994 IRFBC30 IRFBC30L IRFBC30S PDF

    AN-994

    Abstract: IRFBC40 IRFBC40L IRFBC40S
    Text: PD - 91016A IRFBC40S/L HEXFET Power MOSFET l l l l l l l Surface Mount IRFBC40S Low-profile through-hole (IRFBC40L) Available in Tape & Reel (IRFBC40S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 600V


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    1016A IRFBC40S/L IRFBC40S) IRFBC40L) 12-Mar-07 AN-994 IRFBC40 IRFBC40L IRFBC40S PDF

    IRFBC30A

    Abstract: No abstract text available
    Text: PD- 91889A IRFBC30A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


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    1889A IRFBC30A O-220AB 12-Mar-07 IRFBC30A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 91889A IRFBC30A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


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    1889A IRFBC30A O-220AB 08-Mar-07 PDF

    IRFBC40A

    Abstract: No abstract text available
    Text: PD -91885A IRFBC40A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


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    -91885A IRFBC40A O-220AB 12-Mar-07 IRFBC40A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -91885A IRFBC40A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


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    -91885A IRFBC40A O-220AB 08-Mar-07 PDF

    fr5305

    Abstract: fr9014 BR 9014
    Text: I S S ' "“ « •'•» » » « F it, Id *D V BR DSS Part Drain-to-Source Breakdown Voltage Number M Continuous R DS(on) Continuous R Pd Drain Current On-State Drain Current Max. Thermal Max. Power 100° Resistance 25°C Resistance 1 Dissipation 1 rc/w )


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Order this data sheet MOTOROLA by M R F10120H/D SEMICONDUCTOR TECHNICAL DATA MRF10120H* MHz Microwave Power Transistor 120 Watts NPN 960-1215 MHz .ill! CPT0 Designed for long pulsed common base amplifiers. Guaranteed Performance at 1215 MHz - Output Power = 120 Watts Peak


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    F10120H/D MRF10120H* MRF10120HX MRF10120HXV MRF10120HS MRF10120HC 355C-02 1PHX31251-1 MRF10120H/D PDF