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    BR 38 SMD Search Results

    BR 38 SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    BR 38 SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bel 187 transistor

    Abstract: No abstract text available
    Text: User's Guide SLVU893 – June 2013 Using the TPS92075 BUCK Converter The TPS92075EVM is a 14-W maximum, 120-VAC non-isolated dimmable LED driver whose form factor intended for A-15, A-19, A-21, A-23, R-20, R-25, R-27, R-30, R-40, PS-25, PS-30, PS-35, BR-30, BR-38,


    Original     		PDF SLVU893 TPS92075 TPS92075EVM 120-VAC PS-25, PS-30, PS-35, BR-30, BR-38, BR-40, bel 187 transistor

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7343 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 55 -55 V ID 4.7


    Original     		PDF KRF7343 -100A/

    KRF7604

    Abstract: No abstract text available
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7604 Features Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Continuous Drain Current, VGS @ -4.5V @ Ta = 25


    Original     		PDF KRF7604 KRF7604

    SMD 3B

    Abstract: smd Transistor 1116 transistor smd 2b SMD SINGLE GATE KPCF8402 3b smd transistor
    Text: IC IC SMD Type Silicon P, N Channel MOS Type Transistor KPCF8402 Features Low drain-source ON resistance : P Channel RDS ON = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.)


    Original     		PDF KPCF8402 SMD 3B smd Transistor 1116 transistor smd 2b SMD SINGLE GATE KPCF8402 3b smd transistor

    KRF7750

    Abstract: HEXFET Power MOSFET P-Channel 4,7 16v smd MOSFET TSSOP-8 smd transistor 26
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7750 TSSOP-8 Unit: mm Features Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter


    Original     		PDF KRF7750 -100A/ KRF7750 HEXFET Power MOSFET P-Channel 4,7 16v smd MOSFET TSSOP-8 smd transistor 26

    2SB1000

    Abstract: SMD BR 08 smd marking AJ POWER ic marking AJ ICP Amplifier IC
    Text: Transistors SMD Type Silicon PNP Epitaxial 2SB1000 Features Low frequency amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -25 V Collector to emitter voltage VCEO -20 V Emitter to base voltage VEBO -5


    Original     		PDF 2SB1000 2SB1000 SMD BR 08 smd marking AJ POWER ic marking AJ ICP Amplifier IC

    Untitled

    Abstract: No abstract text available
    Text: PD - 91433C IRHNA9160 JANSR2N7425U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/655 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9160 100K Rads (Si) IRHNA93160 300K Rads (Si)


    Original     		PDF 91433C IRHNA9160 JANSR2N7425U MIL-PRF-19500/655 IRHNA93160 JANSF2N7425U -385A/Â -100V,

    IRHNA9160

    Abstract: IRHNA93160 JANSF2N7425U JANSR2N7425U
    Text: PD - 91433B IRHNA9160 JANSR2N7425U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/655 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9160 100K Rads (Si) RDS(on) 0.068Ω ID -38A


    Original     		PDF 91433B IRHNA9160 JANSR2N7425U MIL-PRF-19500/655 IRHNA93160 JANSF2N7425U -385A/ -100V, IRHNA9160 IRHNA93160 JANSF2N7425U JANSR2N7425U

    IRHNA9160

    Abstract: IRHNA93160 JANSF2N7425U JANSR2N7425U
    Text: PD - 91433C IRHNA9160 JANSR2N7425U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/655 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9160 100K Rads (Si) IRHNA93160 300K Rads (Si)


    Original     		PDF 91433C IRHNA9160 JANSR2N7425U MIL-PRF-19500/655 IRHNA93160 JANSF2N7425U -385A/ -100V, IRHNA9160 JANSF2N7425U JANSR2N7425U

    78 DIODE SMD

    Abstract: KRF7504
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7504 Features Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ -4.5V @ TA = 25


    Original     		PDF KRF7504 78 DIODE SMD KRF7504

    smd diode 77a

    Abstract: p-channel mosfet 78 DIODE SMD KRF7317 77A DIODE
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7317 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Symbol N-Channel P-Channel Unit


    Original     		PDF KRF7317 -100A/ smd diode 77a p-channel mosfet 78 DIODE SMD KRF7317 77A DIODE

    78 DIODE SMD

    Abstract: P channel MOSFET 50A KRF7507 P-channel power mosfet
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7507 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter


    Original     		PDF KRF7507 -100A/ 78 DIODE SMD P channel MOSFET 50A KRF7507 P-channel power mosfet

    diode smd 270a

    Abstract: smd transistor 3400 ld smd transistor smd transistor nc 61 KRF4905S mosfet, hexfet to-263 930 diode smd EAR20
    Text: Transistors IC SMD Type HEXFET Power MOSFET KRF4905S 1 .2 7 -0+ 0.1.1 TO-263 Features Advanced Process Technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 P-Channel Fully Avalanche Rated 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2


    Original     		PDF KRF4905S O-263 diode smd 270a smd transistor 3400 ld smd transistor smd transistor nc 61 KRF4905S mosfet, hexfet to-263 930 diode smd EAR20

    ld smd transistor

    Abstract: 78 DIODE SMD KRF2805S 104A smd diode JC 68
    Text: Transistors IC SMD Type HEXFET Power MOSFET KRF2805S TO-263 Features Unit: mm 1 .2 7 -0+ 0.1.1 Advanced Process Technology Ultra Low On-Resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Dynamic dv/dt Rating 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF KRF2805S O-263 11gate 22drain 33source ld smd transistor 78 DIODE SMD KRF2805S 104A smd diode JC 68

    smd 2N3906

    Abstract: 2N3904 TRANSISTOR SMD 2N3906 SMD
    Text: General Purpose Transistor SMD Diodes Specialist 2N3906-G PNP RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. 0.185(4.70) 0.169(4.30) 2N3904-G is recommended. 0.055 (1. 14) 0. 0 20( 0 .51 )


    Original     		PDF 2N3906-G 2N3904-G OT-23 MMBT3906-G. 200uA QW-BTR05 smd 2N3906 2N3904 TRANSISTOR SMD 2N3906 SMD

    3PN0403

    Abstract: IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898
    Text: Preliminary Data Sheet IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


    Original     		PDF IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0403 IPI100N04S3-03 3PN0403 IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898

    3N0609

    Abstract: smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf
    Text: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88715 3N0609 smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf

    3N06L06

    Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
    Text: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88004 3N06L06 marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06

    2n04h4

    Abstract: SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2
    Text: IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18165 2N04H4 2n04h4 SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2

    2n04h4

    Abstract: IPI80N04S2-0H4 infineon 2N04H4 H4 SMD ANPS071E IPB80N04S2-H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2 2N-0
    Text: IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.7 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 2N04H4 IPP80N04S2-H4 2n04h4 IPI80N04S2-0H4 infineon 2N04H4 H4 SMD ANPS071E IPB80N04S2-H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2 2N-0

    2n0612

    Abstract: smd diode marking 77 ANPS071E IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 infineon 2n0612 SP0002-18173 SP0002-18172
    Text: IPB77N06S2-12 IPP77N06S2-12 OptiMOS Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 11.7 77 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 PG-TO220-3-1 SP0002-18173 2N0612 2n0612 smd diode marking 77 ANPS071E IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 infineon 2n0612 SP0002-18173 SP0002-18172

    3N06L06

    Abstract: IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2
    Text: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L06 IPI80N06S3L-06 3N06L06 IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2

    Q67065-A7014

    Abstract: IPI80N06S3L06
    Text: Preliminary Data Sheet IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB80N06S3L-06 IPI80N06S3L-06 PG-TO263-3-2 Q67065-A7014 IPI80N06S3L06

    smd rgs

    Abstract: SMD TRANSISTOR FL smd code buz 7C SMD TRANSISTOR SMD TRANSISTOR qd SM-38 transistor SMD DIODE 681 smd transistor ds smd transistor ds 65 DIODE BUZ smd
    Text: Infineon technologies BUZ 32 SMD SIPMOS Power T ransistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds 1D ^DS(on) Package BUZ 32 SMD 200 V 9.5 A 0.4 f i d 2p a k Ordering Code Q67042-S4133 Maximum Ratings Parameter


    OCR Scan     		PDF q67042-s4133 smd rgs SMD TRANSISTOR FL smd code buz 7C SMD TRANSISTOR SMD TRANSISTOR qd SM-38 transistor SMD DIODE 681 smd transistor ds smd transistor ds 65 DIODE BUZ smd