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    BPY11 Search Results

    BPY11 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BPY11 Siemens Silicon Photovoltaic Cell Original PDF
    BPY11 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BPY11P Siemens Silicon Photovoltaic Cell Original PDF
    BPY11PIV Siemens Silicon Photovoltaic Cell Original PDF
    BPY11PV Siemens Silicon Photovoltaic Cell Original PDF

    BPY11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CQY78

    Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
    Text: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge


    Original     		PDF BPW33) CQY78 CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium

    CQY78

    Abstract: cqy77 SF-104 equivalent transistor BPW33 solar cell transistor infrared phototransistor application lux meter photoelectric infra red sensor pair CQY78 IV Infrared phototransistor TO18 phototransistor sensitive to green light
    Text: General IR and Photodetector Information Appnote 37 are separated and a photocurrent flows through an external circuit, also without an additional voltage photovoltaic effect . Carriers occurring in the space charge region are immediately sucked off due to the field prevailing in this layer. The


    Original     		PDF

    s272

    Abstract: No abstract text available
    Text: Temic BPY11 S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B P V U is a v e ry h ig h se n sitiv e silic o n N P N e p ita x ial p la n a r p h o to tra n s is to r in a sta n d a rd T - 1 % p la stic p a c k ­ age. D u e to its w a te rc le a r e p o x y len s th e d e v ic e is se n sitiv e to


    OCR Scan     		PDF BPY11 16-Oct-96 BPV11 ct-96 s272

    "PHOTOVOLTAIC CELL"

    Abstract: No abstract text available
    Text: SIEMENS BPY11P Silicon Photovoltaic Cell Dimensions in inches mm Active area .092 (2.35) .084(2.15) f .083(2.1 1 T 024 (0.6) 1.258 (32) 1.179(30) .118 (3.0)_ .059(1.5) .079 (2)' .00^8 ( 0 .2 ) Stands Soldered t t / t .191 (4.85) 183 (4.657 .026 (0.65) .020 (0.5)


    OCR Scan     		PDF BPY11P BPY11P 18-pln fl535t "PHOTOVOLTAIC CELL"

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BPY11 P Silizium-Fotoelement Silicon Photovoltaic Cell and and Approx. back so ld e r pads lacq uered side weight 0 .1 fSO06032 D iode g Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. W esentliche M erkmale


    OCR Scan     		PDF BPY11

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silizium-Fotoelement Silicon Photovoltaic Cell BPY11P Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • S p e zie ll geeignet für Anw endungen im B ereich von 420 nm bis 1060 nm


    OCR Scan     		PDF BPY11P A23Sti05 BPY11 S35b05

    BPY 10

    Abstract: C 82 siemens SFH nm Bpy 43 Q60215-Y65
    Text: Si-Fotodetektoren Silicon Photodetectors 8. Fotodioden für spezielle Anwendungen 8. Photodiodes for Special Applications Tk = 2 5 C r A = 25 C 8.2 Zwei- und Vierfach-Fotodioden Package Radiant sensitive area ? K„ = 5 V , £ v = 1000 Ix, standard light A


    OCR Scan     		PDF Q62702-P270 Q62702-P17-S1 BPY11 Q60215-Y111-S5 Q62702-P51 Q60215-Y67 Q60215-Y65 Q60215-Y63-S1 Q62607-S60 Q62607-S61 BPY 10 C 82 siemens SFH nm Bpy 43 Q60215-Y65

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    lg 6154

    Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
    Text: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp


    OCR Scan     		PDF Q60215-Y62 O60215-Y63-S1 Q60215-Y65 Q60215-Y66 Q60215-Y67 Q60215-Y111-S4 Q60215-Y111-S5 Q60215-Y1111 Q60215-Y1112 Q60215-Y1113 lg 6154 KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64

    SFH 255 FA

    Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
    Text: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite


    OCR Scan     		PDF 068000-A5018 Q68000-A5017 Q68000-A5707 Q62703-N26 Q62703-N51 Q62703-N52 Q68000-A7302 Q68000-A7303 Q68000-A7304 Q68000-A8086 SFH 255 FA LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452

    Untitled

    Abstract: No abstract text available
    Text: Si-Fotodetektoren 8.2 Silicon Photodetectors Zwei- und Vierfach-Fotodioderi Package <t> Type 8.2 Radiant sensitive *ab4 /95 area SFH 234S ±55 2m al/times 2 4 (^ 1 5 ) ±60 0 5 Q62702-P270 35 0 1( s t ) 3 5 0 . 1050 1 Q62702-P211 36 4m al/times 1X1 0.2 (=S 1)


    OCR Scan     		PDF Q62702-P270 Q62702-P211 Q62702-P212 5-Y111-S4 60215-Y111-S5 Q62702-P51 400nm BPY64P 15-Y67 PY48P

    SFH302

    Abstract: SFH203 IRF 426
    Text: Si-Fotodetektoren und IR-Lumineszenzdioden Silicon Photodetectors and Infrared Emitters Outline drawings in mm Maßbilder (in mm) Figure 1 S u r 'a c e no* f la t in i Ö! °! Q .8 n a x ° G 1 GND 9.0 y t ' 0.5 S. ¡ 5.9 7.8 7.5 oo m ö o ¡ f t 1 C athode


    OCR Scan     		PDF GE006270 SFH302 SFH203 IRF 426

    KT853

    Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
    Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Sjlizium-Fotoelement Silicon Photovoltaic Cell BPY 11 P Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1060 nm • Kathode = Chipunterseite


    OCR Scan     		PDF BPY11 235bG5 flE3Sb05 GG573ci3