vqe24
Abstract: VQE14 VQE23 MB111 TIL78 VQA13 VQB28 TIL414 VQA13-1 OPTOKOPPLER
Text: RFT VQA10 Beschreibung Siemens LED, 5 mm, TSN-rot, Gehäuse diffus LS5160 rot Hewlett Packard General Instruments Telefunken Texas Instruments Toshiba Valvo HLMP-3300 (MV5753) TLUG5400 (TIL228) (TLS154) CQX51 VQA13 LED, 5 mm, rot, Gehäuse diffus klar VQA13-1 LED, 5 mm, rot, Gehäuse diffus rot LR5160 HLMP-3000 MV5054A TLUR5400 (TIL220)
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VQA10
LS5160
HLMP-3300)
MV5753)
TLUG5400
TIL228)
TLS154)
CQX51
VQA13
VQA13-1
vqe24
VQE14
VQE23
MB111
TIL78
VQB28
TIL414
OPTOKOPPLER
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em 483
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter 00.45 SFH 483 Chip position I Anode LD 242, BPX63, SFH 464 Cathode (SFH 483) Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale
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BPX63,
IQ100
450k/W
em 483
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Untitled
Abstract: No abstract text available
Text: SFH483 SIEMENS FEATURES • Highly efficient GaAIAs LED • Anode electrically connected to case • High pulse power • High reliability • DIN humidity category per DIN 40040 GOG • Matches BPX63, BP103, LD242, SFH464, photodetectors • Package - TO -18,18 A3 DIN 41870
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SFH483
BPX63,
BP103,
LD242,
SFH464,
TcS25
E7800"
/lE100mA
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BPW21 centronic
Abstract: BPW21 photodiode BPX65 BPX65 BPX63 Centronic BPX66 T018 BPW-21
Text: CENTRONIC INC-. E-0 DIV TG DE J m S E S G DD00177 7 I P ro -E le ctro n S e rie s o f P h o to d io d e s 1995250 C E N T R O N IC IN C , E -0 90D 00177 D H \^ S 'f “ BPX63, BPX65, BPX66, BPW21 The Centronic pro-electron series of photodiodes are in quantity production.
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BPX63,
BPX65,
BPX66,
BPW21
BPX63
BPX65
BPX66
BPW21
95Qnm
BPW21 centronic
photodiode BPX65
Centronic
T018
BPW-21
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH483 GaAIAs INFRARED EMITTER FEATURES Maxim um Ratings • Highly Efficient GaAIAs LED O perating and Storage Tem perature Range T0P, Ts tg - 4 0 to + 80°C Jun ction Tem perature (T j). 100°C
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SFH483
E7800"
160K/W
S53b3ab
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8PX43
Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275
Text: Infrared Emitters Radiant Intensity Package Outline Part Number Package TVP» Half Angle Surga Currant Features Page A SFH420 SMTTOPLED ±60" SFH421 SMTTOPLED ± 60 ° 2.5-5 too GaAs, 950 nm. On tape and reel. 7-25 4-8 100 GaAIAs, 880 nm. On tape and reel.
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SFH420
SFH421
BP104
BP103.
SFH205,
BP104,
BP103B.
LD271
LD271L
LD274-1
8PX43
SFH415T
GKDb
L81a
SFH402-2
SFH910
SFH485
SFH462
sfh481-3
LD275
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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J920
Abstract: BP103
Text: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES • GaAs Infrarad Emitting Diode, Fabricated In a Liquid Phase Epitaxy Emits Radiation in Near Infrared Range Cathode Electrically Connected to Case High Efficiency High Reliability Long Lifetime
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LD242
BP103,
BPX63
CT018)
LD242
-LE78MM
J920
BP103
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Untitled
Abstract: No abstract text available
Text: LD242 SIEMENS GaAs INFRARED EMITTER Package Dimensions in Inches mm 185(4 75), 141 (3 6^ 118 (3 0) 571 (14 5) 492(12 5) * max * r 0100 (2 54) -p V — 0 169(43) . 0161(4.1) i f e \ t Anode 0.018(0 45) 106(2 7) Chip Location 216(5 5) 204 (5 2) Maximum Ratings
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LD242
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sfh462
Abstract: No abstract text available
Text: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maximum Ratings * Highly Efficient GaAIAs LED O p e ra tin g a n d S to ra g e T e m p e ra tu re R a n g e T0 p. T s t g - 4 0 to + 8 0 °C J u n c tio n T e m p e ra tu re ( T j) .100°C
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SFH483
BPX63,
BP103,
E78D0"
SFH483
sfh462
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Untitled
Abstract: No abstract text available
Text: SIEMENS B P X 63 Very Low Dark Current Silicon Photodiode APPLICATION • Exposure meters, automatic exposure timers DESCRIPTION The BPX 6 3 is a silicon pla n a r p ho tod iod e , m o un ted on a T 0 1 8 base p la te a n d covered w ith tra n s p a re n t p la stic. The BPX 6 3 h as been
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985x0
18-pln
fl535t
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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Untitled
Abstract: No abstract text available
Text: bOE » • 023Sbü5 DGHbSTH ibi « S I E G ,i SIEMENS AKTIENGESELLSCHAF SIEMENS LD242 GaAs INFRARED EMITTER Package Dimensions in Inches mm 571 (14.51 492(12 5) ,141 (3 6) 118(3 0) “ F 0 1 6 9 (4 3) . 0 161(4.1) 0100 (2 54) f 0 018(045) -106 (2 7) Chip Location
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023SbÃ
LD242
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SFH 462
Abstract: SFH483-L BPX63 SFH463 tc25c25 SFH483-LE7800 SFH483-M din 40040 humidity
Text: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maximum Ratings • Highly Efficient GaAIAs LED Operating and Storage Temperature Range Top, Tstg . -4 0 to + 80°C Junction Temperature (Tj). 100°C
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SFH483
BPX63,
BP103,
E7800"
50KAN
160KyW
SFH 462
SFH483-L
BPX63
SFH463
tc25c25
SFH483-LE7800
SFH483-M
din 40040 humidity
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SFH 255 FA
Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
Text: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite
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068000-A5018
Q68000-A5017
Q68000-A5707
Q62703-N26
Q62703-N51
Q62703-N52
Q68000-A7302
Q68000-A7303
Q68000-A7304
Q68000-A8086
SFH 255 FA
LR 2703
LY3360K
dl340m
FP310L100-75
Q68000-A8452
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UAA2001
Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re
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0HF40
0HF60
0HF80
6FP10
6F100
70HF10
UAA2001
MC8500
micromodule m68mm19
1N9388
74ALS643
2N6058
MC145026
2N5160 MOTOROLA
MC3340 equivalent
pn3402
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BPX63
Abstract: ld242
Text: SIEMENS LD242 GaAs INFRARED EMITTER Package Dimensions in Inches mm 186 (4 .7 5 ) 141 (3 .6 ^ .671 ( 1 4 .5 ) 4 9 2 (1 2 5 ) 118 (3 .0 ) r 0 1 6 9 (4 .3 ) 0.100 (2 .5 4 ) _ 0 .1 6 1 (4 . 1) / f r i -5 0 .0 1 8 ( 0 4 5 ) |\ Anode .2 1 6 (6 .5 ) 106 <2 .7 )
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LD242
BP103,
BPX63
LD242
-LE7800f>
-ME7800<
BPX63
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SFH400-2
Abstract: LD275-2 IR remote control SFH205 sfh910 LD274-3 LD275-3 SFH402-2 LD242-3 Gaa 725
Text: Infrared Emitters Radiant tntenarty Package Outline r r n 0 r = ~ i p t— !ï-" à i h Part Number Package Type Surge Current HaH Angle mA (t< 10|ie ) A Fealuree Paga SFH420 SMTTOPLED ±60“ 2.5-5 100 GaAs, 950 nm. On tape and reel. 7-25 SFB421 SMTTOPLED
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SFH420
SFB421
SFH205,
BP104
BP103.
BP104,
BP103B.
LD271
LD271L
SFH400-2
LD275-2
IR remote control
SFH205
sfh910
LD274-3
LD275-3
SFH402-2
LD242-3
Gaa 725
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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Untitled
Abstract: No abstract text available
Text: BPX 63 SIEMENS Very Low Dark Current Silicon Photodiode FEATURES • Especially suitable for applications from 350 nm to T100 nm • Low reverse current typ. 5 pA • TO-1B, base plate, transparent epoxy resin lens APPLICATION • Exposure meters, automatic exposure
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BPX63
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Untitled
Abstract: No abstract text available
Text: LD242 SIEMENS GaAs Infrared Emitter Dimensions in inches mm .141 (3.6) .571i (14.5)_ ( _ .492r o( í ? ) 0.100 (2.54) Áíiode 0 .018 (0.45) 106(2.7) GET06625 Crap Location FEATURES • GaAs infrared emitting diode, fabricated In a liquid phase epitaxy process
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LD242
GET06625
BP103,
BPX63,
SFH464,
SFH483
0HSD1S37
/lE100mA
0H801037
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BP103 F
Abstract: No abstract text available
Text: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maxim um Ratings • Highly Efficient GaAIAs LED O p e ra tin g a n d S to ra g e T e m p e ra tu re R a n g e To p , Ts t q - 4 0 to + 80°C * Radiation in Near Infrared Range Ju n c tio n T e m p e ra tu re ( T j ) .100°C
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SFH483
BPX63,
BP103,
E70OO"
BP103 F
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L0242
Abstract: No abstract text available
Text: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Emits Radiation In Near Infrared Range * Cathode Electrically Connected to Case Operating and Storage Temperature Range T0P, Tstg . -40° to +80°C
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LD242
BP103,
BPX63
E7800"
L0242
L0242
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