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    PEI Genesis CA3102E20-23SB04

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    DigiKey CA3102E20-23SB04 Bag 413 1
    • 1 $41.24
    • 10 $30.93
    • 100 $19.04
    • 1000 $19.04
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    PEI Genesis CA3102E20-23SB109

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    DigiKey CA3102E20-23SB109 Bag 124 1
    • 1 $44.92
    • 10 $33.69
    • 100 $20.73
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    Amphenol PCD SIME3023SB

    MODULE FOR CRIMPED CONTACTS SOCK
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    DigiKey SIME3023SB Bulk 90 1
    • 1 $125.55
    • 10 $125.55
    • 100 $101.17611
    • 1000 $101.17611
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    PEI Genesis CA3100E20-23SB

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    DigiKey CA3100E20-23SB Bag 87 1
    • 1 $84.49
    • 10 $63.37
    • 100 $39
    • 1000 $39
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    PEI Genesis CA3106E20-23SB15

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    DigiKey CA3106E20-23SB15 Bag 87 1
    • 1 $108.98
    • 10 $81.74
    • 100 $50.3
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    023SB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: tiGE D 023SbD5 0QS0?bti 213 • SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF SAE 81C52 256 x 8-Bit Static CMOS RAM NMOS-Compatible CMOS IC Preliminary Data Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families


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    PDF 023SbD5 81C52 VPS05094 P-DSO-20-1 Q67100-H9017 P-DIP-16 IES008H 81C52

    TCA315A

    Abstract: TCA 325 A tca325 tca322 TCA325A tca315
    Text: 47E » • SIEMENS 023Sb05 0034734 T « S I E G SIEMENS AKTIEN6ESELLSCHAF T ' 1 ^ 5 3 Comparators with Darlington Input TTL-Compatible TCA 312 TCA 315 Features Bipolar 1C • • • • • • • • 2 Very high input resistance Large control range High output current


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    PDF 023Sb05 7000-A 67000-A561 i235b05 003M7M7 TCA312 TCA315 r-73-53 fl235bOS TCA315A TCA 325 A tca325 tca322 TCA325A tca315

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40


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    PDF 023SbOS CGY50 OT-143 CGY40 CLY10 CGY52

    Untitled

    Abstract: No abstract text available
    Text: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for


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    PDF 023SbQS Q004312 60203-Y66 BCY66 QQ0M31Ö

    222-1

    Abstract: AF2N br 2222 npn 2222 A 2221 N 2222 2N2222 2221A A4075 a2222a
    Text: 2SC D • 023SbQS Q0Q4ÖÖÖ 7 « S I E G NPN Silicon Planar Transistors - -SIEMENS AKTIENGESELLSCH AF. . 2 N 2221 A 2 N 2222 A - 2 N 2221 A, and 2 N 2222 A are epitaxial NPN silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are


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    PDF 023SbQS Q62702-F414 -S122 fl23SbQ5 222-1 AF2N br 2222 npn 2222 A 2221 N 2222 2N2222 2221A A4075 a2222a

    transistor Siemens 14 S S 92

    Abstract: transistor 115 47e
    Text: I 023SbOS 0020014 3 El SIEG SIEMENS AKTIENGESELLSCHAF 47E » T-21-Z5 BS 107 SIPMOS Small-Signal Transistor Vos /„ = 200 V =0.13 A flbs o n = 26 Q • N channel • Enhancement mode • Package: TO-92') "type Ordering code for version on tape Ordering code


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    PDF 023SbOS T-21-Z5 Q67000-S078 Q67000-S060 chap60 235b05 transistor Siemens 14 S S 92 transistor 115 47e

    SBV566

    Abstract: hall generator K2488 Hall Siemens sbv 566 siemens hall ferrite P Ferrite Siemens Siemens Hall siemens hall generator
    Text: D • 023SbOS Q01L373 1 ISIE6 Ferrite Mounted Hall Generator SBV 566 SIEMENS AKTIEN6ESELLSCHAF - Features _LL • Compact size • High sensitivity J= = Q □2.WW»7.S- Typical ap p licatio n s • Current sensing • Position sensing - 12.1


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    PDF 023SbOS Q01L373 20Rem SBV566 hall generator K2488 Hall Siemens sbv 566 siemens hall ferrite P Ferrite Siemens Siemens Hall siemens hall generator

    Transistor BSX 62-16

    Abstract: No abstract text available
    Text: ESC D • 023Sb05 Q Q Q M û n T H S I E â { NPN Silicon Planar Transistors BSX62 -BSX63 - SIEMENS AKTIEN6ESELLSCHAF -BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3


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    PDF 023Sb05 BSX62 ------------------------------------BSX63 Q60218-X62 Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63 Q60218-X63-B 060218-X63-C Transistor BSX 62-16

    BC 179

    Abstract: transistor af 178 BC179 BC178B Q62702-C685 TI-5045 BC179E C154 TRANSISTOR BC 177 transistor
    Text: 2SC ì> • 023SbOS O D Q m iS 7 H S I E 6 ¿pc xj*tLL^ —- jO D '*y* <Ky PNP Silicon Transistors * " BC 177 -S IE M E N S AKTIENGESELLSCHAF -BC179 BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case


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    PDF 023SbOS --------------------------------BC179 62702-C Q62702-C141 62702-C142 Q62702-C685 62702-C153 62702-C154 62702-C686 BC 179 transistor af 178 BC179 BC178B TI-5045 BC179E C154 TRANSISTOR BC 177 transistor

    TMT Isolator

    Abstract: BR306 dioda switching photo transistor til 78 SFH609 F4183
    Text: SIEMENS AKTIENGESELLSCHAF M7E D • 023SbOS D D 2 7 2 m S ■ SIEG 1=41-83 SIEMENS SFH609 SERIES HIGH RELIABILITY PHOTOTRANSISTOR OPTOCOUPLER Package D im ensions in Inches m m 307(7 6) .291 {7 4) 35616 Sì 248(6 3) E Œ E 3 3 3 ANOCE [T k CATHODE [ Ï NCH


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    PDF fi23SbDS D027214 F41-83 SFH609 Vceo90V E52744 TMT Isolator BR306 dioda switching photo transistor til 78 F4183

    SFH401-2

    Abstract: SFH401-4 sfh 910 2SC300 SFH401-3 SFH401 T018 marking s15 diode 0DE7371 sfh4012
    Text: SIEMENS AKTIENGESELLSCHAF 47E D • 023SbOS S IE M E N S DDE7371 ñ «ISIE6 SFH 401 SERIES GaAs INFRARED EMITTER -r-m-u Package Dimensions in Inches mm *“ .117(4 75) .181 (4.6) ~\ 1 - f i) A S .A ^ / 0.10 (254) t 216(5.» ¿11 (5.35) Cathode FEATURES Maximum Ratings


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    PDF 235bOS 0DE7371 SFH401 SFH401-2 SFH401-4 sfh 910 2SC300 SFH401-3 SFH401 T018 marking s15 diode sfh4012

    DIN 50014 STANDARD

    Abstract: C67078-A1610-A2 DIN 50014 BUZ67 BV EI 301 siemens T bv
    Text: ÔÔD D • 88D 023SbOS 0014714 2 « S I E G 14714 D 'T~''37~J3 BUZ67 ^SIEMENS AKTIEN6ESELLSCHAF_ Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-reslstance Description Case - 400 V = 9,6 A h ^DS OH = 0,4 S i


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    PDF 23sb0s 00147m BUZ67 SBUZ67 C67078-A1610-A2 fl235bG5 00147n DIN 50014 STANDARD C67078-A1610-A2 DIN 50014 BUZ67 BV EI 301 siemens T bv

    Siemens 1736

    Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
    Text: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for


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    PDF 0235bG5 Q004312 BCY66 Q60203-Y66 TcaseS45Â fi23Sb05 Q0QM31? 120Hz Siemens 1736 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312

    Untitled

    Abstract: No abstract text available
    Text: m G 023SbGS 0050125 1 S S I E S I E M E N S jflG-iVMf&iM.* SIEMENS AKTIENGESELLSCHAF 47E T -3 9 -/5 ' SIMOPAC M O SFET Module BSM 191 C Vos = 1000 V l0 = 28 A ^os(on) = 0.37 Q • • • • • • Power module Single switch N channel Enhancement mode


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    PDF 023SbGS C67076-A1009-A2 235b05 0235bOS

    Untitled

    Abstract: No abstract text available
    Text: bOE D • 023SbOS D04bSSE 4D5 m s i E G SIEMENS SFH 4212 IRED T 0 1 8 PACKAGE rillc SIEMENS AKTIENGESELLSCHAF P a cka g e D im e n sio n s in mm FEATURES M a xim u m R atings * In G a A s P /ln P -IR E D 60 mA Forward Current DC lF .


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    PDF 023SbOS D04bSSE

    siemens mov all range

    Abstract: intel 80c535 n
    Text: 47E D • 023SbDS OOaô'ID? b » S I E G SIEMENS AKTIENGESELLSCHAF T- s SAB 80C515/80C535 8-Bit CMOS Single-Chip Microcontroller Advance Inform ation SAB 80C515 / 80C515-16 CMOS microcontroller with factory mask-programmable ROM SAB 80CS35 / 80C535-16 CMOS microcontroller for external ROM


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    PDF 023SbDS 80C515/80C535 80C515 80C515-16 80CS35 80C535-16 80C515-T40/110, 80C535-T40/110 80C515-T40/85, 80C53S-T40/85 siemens mov all range intel 80c535 n

    Untitled

    Abstract: No abstract text available
    Text: bOE ]> m 023SbOS 004b221 CHb • SIEÛ SIEMENS LB 5410-HO Blue TVA 5 mm LED Lamp SIEMENS AKTIENGESELLSCHAF LED Lamps Package Dimensions in inches (mm) Maximum Ratings FEATURES • Pure Blue Light (480 nm) • Clear T r /* (5 mm) Plastic Package • 1" Minimum Lead Length


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    PDF 023SbOS 004b221 5410-HO

    S498

    Abstract: BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components
    Text: <IENENS AKTIEN6ESELLSCHAF 03E D • 023SbOS 001Sb37 4 BISIE6 T^£7~2S' Kleinsignaltransistoren Small-Signal Transistors N-Kanal Anreicherungstypen N channel enhancem ent types K S max) V ti(max) rriA ft P,ot mW G ehäuse P ackage SBS SCS Bestellnummer Ordering co d e


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    PDF 023SbOS lSb37 Q62702- BSS981' BSS1381Â OT-23 BSS3951Â O-202 BSS100 BSS123 S498 BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components

    TRANSISTOR BC 137

    Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
    Text: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.


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    PDF 023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107

    bu 11 af

    Abstract: No abstract text available
    Text: ESC D • 023SbG5 ÜGQMfib? T ■ SIEG 7”BUX84 BUX85 NPN Silicon Power Transistors SIEMENS AK TI EN G ES EL LSC HA F . ° BUX 84 and BUX 85 are triple diffused NPN silicon power transistors in TO 220 cases. They are outstanding for their short switching times and high dielectric strength, and are


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    PDF 023SbG5 BUX84 BUX85 Q68000-A3869 Q68000-A5166 Talxi50 fl235fc bu 11 af

    Untitled

    Abstract: No abstract text available
    Text: LOE D 023SbDS IS I E G DD4b55D b3T -T-4 -S o SFH 2325 SFH 2326 SIEMENS GE-AVALANCHE PHOTODIODE WITH MM FIBER PIGTAIL SIEMENS A K T IE N G E S ELLS-CHA.F Package Dimensions in mm FEATURES Maximum Ratings * Designed for Application in Fiber-Optic Communication Systems


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    PDF 023SbDS DD4b55D

    LHi 954

    Abstract: LHi 958 LHI958 LHI954 LHI-958 pyroelectric TO-5 1/LHI954
    Text: SJ SIEMENS AKTIENGESELLSCHAF 47E D • 023Sb05 ODSTfi^S 1 » S I E G LHi954 LHi958 Pyroelectric Dual Element Detector The LHi 9 5 4 /9 5 8 series pyroelectric detector consists of two completely separate lithium tantalate crystals connected in parallel opposed


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    PDF 023Sb05 LHi954 LHi958 G--04 LHi 954 LHi 958 LHI958 LHI954 LHI-958 pyroelectric TO-5 1/LHI954

    Hall Siemens sbv 525

    Abstract: K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv
    Text: 2^ T> • 023SbOS Q01b3?l ô H S I E 6 Field Probe for Measurements in Small Gaps S B V 525 SIEMENS AKTIENGESELLSCHAF - The S B V 525 is a hall generator of InAs semiconductor material designed for measuring magnetic fields in small gaps. S B V 5 25


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    PDF 023SbOS Q01b3 4099-V TCV20 Hall Siemens sbv 525 K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv

    BD 862

    Abstract: No abstract text available
    Text: " 2SC D • 023SbOS 0004417 1 « S I E 6 r T-33“31. PNP Silicon Darlington Transistors j BD 862 BD 864 SIEMENS AKTIENGESELLSCHAF ° 80866 E p ib ase p o w e r d a rlin g to n tra n sisto rs 15 W BD 862, BD 864, and BD 866 are monolithic silicon PN P epibase power darlington transistors


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    PDF 023SbOS F--03 DQG4420 BD 862