Untitled
Abstract: No abstract text available
Text: BPW24R Vishay Telefunken Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO–18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device
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BPW24R
BPW24R
D-74025
20-May-99
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BPW24R
Abstract: No abstract text available
Text: BPW24R Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW24R
BPW24R
18-Jul-08
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BPW24R
Abstract: No abstract text available
Text: BPW24R Vishay Semiconductors Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device
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BPW24R
BPW24R
D-74025
08-Mar-05
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Untitled
Abstract: No abstract text available
Text: BPW24R www.vishay.com Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity
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BPW24R
BPW24R
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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BPW24R
Abstract: PHOTOVOLTAIC CELL
Text: BPW24R Vishay Telefunken Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO–18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device
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BPW24R
BPW24R
D-74025
20-May-99
PHOTOVOLTAIC CELL
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8439
Abstract: BPW24 telefunken ra 200 BPW24R
Text: BPW24R Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO–18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device features a low
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BPW24R
BPW24R
D-74025
15-Jul-96
8439
BPW24
telefunken ra 200
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Untitled
Abstract: No abstract text available
Text: BPW24R www.vishay.com Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity
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BPW24R
BPW24R
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: BPW24R www.vishay.com Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity
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BPW24R
BPW24R
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: BPW24R Vishay Semiconductors Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device
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BPW24R
BPW24R
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: BPW24R Vishay Semiconductors Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device
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BPW24R
BPW24R
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: BPW24R Vishay Semiconductors Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device
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BPW24R
BPW24R
08-Apr-05
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BPW24R
Abstract: BPW24
Text: BPW24R Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW24R
BPW24R
11-Mar-11
BPW24
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BPW24
Abstract: BPW2 8439
Text: BPW24R VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device
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BPW24R
BPW24R
D-74025
26-Mar-04
BPW24
BPW2
8439
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BPW24R
Abstract: No abstract text available
Text: BPW24R Vishay Semiconductors Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO–18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device
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BPW24R
BPW24R
D-74025
20-May-99
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BPW24R
Abstract: diode 8409
Text: TELEFUNKEN Semiconductors BPW 24 R Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO–18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The
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BPW24R
D-74025
diode 8409
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near IR sensors with daylight filter
Abstract: light sensing circuit project BPW34 application note BPW20RF
Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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TEKT5400S
TSKS5400S
2002/95/EC
2002/96/EC
TEKT5400S
2002/95/EC.
2011/65/EU.
JS709A
near IR sensors with daylight filter
light sensing circuit project
BPW34 application note
BPW20RF
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BPW34 application note
Abstract: No abstract text available
Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°
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VSMS3700
VEMT3700
J-STD-020
VSMS3700
AEC-Q101
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
BPW34 application note
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BPW20RF
Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPV11
2002/95/EC
2002/96/EC
BPV11
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
BPW20RF
BPW34 osram
phototransistor application lux meter
BPW41
BPW34 application note
BPW20RF application
BPW41N IR DATA
wi41g
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
Text: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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VSMF4720
VSMF4720
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
BPW34 application note
APPLICATION NOTE BpW34
lux meter calibration
RB94
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BPW46
Abstract: BPW34 osram
Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power
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VSLB3940
2002/95/EC
2002/96/EC
VSLB3940
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
BPW46
BPW34 osram
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A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer
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90F8548
SDP8600-001
95F5325
SDP8371-001
28H5849
28H5850
OPB933W55Z
08F2750
OPB963T55
08F2755
A 69157 scr
65k5
HEDS 5300
HCPL-900J-000E
HCPL 0636
DT 8210 IC
hcpl788
hcpl 1360
HEDS 8210
83K3
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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Untitled
Abstract: No abstract text available
Text: Temic BPW24R S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PW 24R is a high sensitive silicon planar photodiode in a standard T O - 18 herm etically sealed metal case with a glass lens. A precise alignm ent o f the chip gives a good coincidence
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OCR Scan
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PDF
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BPW24R
15-Jul-96
15-Ju
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BPW89
Abstract: S284P BPW21 BPW47B BPW98 BPW84 S213P BPW24R 810 W47A A953
Text: TELEFUNKEN ELECTRONIC HME ]> B flTEODTb Ü G 1 1 1 7 Q 3 B I a I g G Photo Detectors I I Phototransistors in Clear Plastic Package Phototransistors w ith Filter M atched for GaAs IREDs in Plastic Package Package Type • Characteristics Photo sensitive area
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OCR Scan
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820nm
BPV11
850nm
BPW89
S284P
BPW21
BPW47B
BPW98
BPW84
S213P
BPW24R 810
W47A
A953
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