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Abstract: No abstract text available
Text: 2007-05-23 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.0 BPW 34 BPW 34 Features: Besondere Merkmale: • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • DIL plastic package with high packing density
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Abstract: No abstract text available
Text: 2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 BPW 34 BPW 34 Features: Besondere Merkmale: • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • DIL plastic package with high packing density
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Abstract: No abstract text available
Text: 2014-01-09 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 BPW 34 S BPW 34 S Features: Besondere Merkmale: • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • DIL plastic package with high packing density
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Abstract: No abstract text available
Text: 2014-01-09 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 BPW 34 SR BPW 34 SR Features: Besondere Merkmale: • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • DIL plastic package with high packing density
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Abstract: No abstract text available
Text: 2007-05-23 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.0 BPW 34 SR BPW 34 SR Features: Besondere Merkmale: • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • DIL plastic package with high packing density
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bpw uv photodiode
Abstract: BPW20 BPW20R
Text: TELEFUNKEN Semiconductors BPW 20 R Silicon PN Photodiode Description BPW20R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the
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BPW20R
D-74025
bpw uv photodiode
BPW20
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GEOY6643
Abstract: Q62702-P76 PA 0016 pa 0016 equivalent
Text: Silizium-Fotodiode Silicon Photodiode BPW 33 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Sperrstromarm typ. 20 pA • DIL-Plastikbauform mit hoher Packungsdichte • Especially suitable for applications from
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Q62702-P76
GEOY6643
Q62702-P76
PA 0016
pa 0016 equivalent
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GEO06643
Abstract: Q62702-P76 BPW33 IR 33 S7535
Text: Silizium-Fotodiode Silicon Photodiode BPW 33 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Sperrstromarm typ. 20 pA • DIL-Plastikbauform mit hoher Packungsdichte Features • Especially suitable for applications from
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Q62702-P76
OHF01402
GEO06643
GEO06643
Q62702-P76
BPW33
IR 33
S7535
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Untitled
Abstract: No abstract text available
Text: 2014-01-09 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.1 BPW 34 FSR Features: Besondere Merkmale: • Especially suitable for the wavelength range of 780 nm to 1100 nm • Short switching time typ. 20 ns
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Text: 2007-03-29 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.0 BPW 34 FSR Features: Besondere Merkmale: • Especially suitable for the wavelength range of 780 nm to 1100 nm • Short switching time typ. 20 ns
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Text: 2007-03-29 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.0 BPW 34 FS Features: Besondere Merkmale: • Especially suitable for the wavelength range of 780 nm to 1100 nm • Short switching time typ. 20 ns
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Text: 2007-03-29 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.0 BPW 34 F Features: Besondere Merkmale: • Especially suitable for the wavelength range of 780 nm to 1100 nm • Short switching time typ. 20 ns
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Q62702-P1602
Abstract: S8050
Text: BPW 34 S feo06862 Silizium-PIN-Fotodiode Silicon PIN Photodiode Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm ● Kurze Schaltzeit typ. 20 ns
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feo06862
Q62702-P1602
S8050
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Untitled
Abstract: No abstract text available
Text: 2014-01-10 Silicon PIN Photodiode with Daylight Filter Si-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.1 BPW 34 FA Features: Besondere Merkmale: • Especially suitable for the wavelength range of 730 nm to 1100 nm • Short switching time typ. 20 ns
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Untitled
Abstract: No abstract text available
Text: 2014-01-09 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.1 BPW 34 FS Features: Besondere Merkmale: • Especially suitable for the wavelength range of 780 nm to 1100 nm • Short switching time typ. 20 ns
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Abstract: No abstract text available
Text: 2007-03-30 Silicon PIN Photodiode with Daylight Filter Si-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.0 BPW 34 FA Features: Besondere Merkmale: • Especially suitable for the wavelength range of 730 nm to 1100 nm • Short switching time typ. 20 ns
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BPW 34 FAS
Abstract: No abstract text available
Text: 2014-01-09 Silicon PIN Photodiode with Daylight Filter; in SMT Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT Version 1.1 BPW 34 FAS Features: Besondere Merkmale: • Especially suitable for the wavelength range of 730 nm to 1100 nm • Short switching time typ. 20 ns
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BPW 34 FAS
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p945
Abstract: transistor P945 GEOY6863 p945 transistor GEOY6643 Q62702-P945 BPW34BS
Text: Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT BPW 34 B BPW 34 BS Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 25 ns
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PHOTOVOLTAIC CELL
Abstract: "PHOTOVOLTAIC CELL" bpw20 photovoltaic cell sensor photovoltaic sensor BPW 10 nf fotodiode 74138 DIN5033 0175A1
Text: BPW 20 'W Silizium-PN-Planar-Fotoelement/Fotodiode Silicon PN Planar Photovoltaic Cell/Photodiode Anwendung: Sensor für die Lichtmeßtechnik Application: Sensor for light m easuring purposes Besondere Merkmale: Features: • Für Fotodioden- und Fotoelem ent-Betrieb
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5033/IEC
PHOTOVOLTAIC CELL
"PHOTOVOLTAIC CELL"
bpw20
photovoltaic cell sensor
photovoltaic sensor
BPW 10 nf
fotodiode
74138
DIN5033
0175A1
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PHOTOVOLTAIC CELL
Abstract: BPW20 "PHOTOVOLTAIC CELL" telefunken ha 800 BPW 10 nf DIN5033 telefunken ra 200 telefunken service
Text: TELEFUNKEN ELECTRONIC 17E D TTIlLglFWOKliM electronic • fi^SDD^b DGDfiBflb 0 BPW 20 _ Cm*W«technologies IAL GG t - w - s y Silicon PN Planar Photodiode Applications: Sensor for light measuring purposes Features: , • For photodiode and photovoltaic cell
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BPW20
fl-10
BPW20
PHOTOVOLTAIC CELL
"PHOTOVOLTAIC CELL"
telefunken ha 800
BPW 10 nf
DIN5033
telefunken ra 200
telefunken service
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sk k 1191
Abstract: fll100 PHOTOVOLTAIC CELL
Text: TELEFUNKEN ELECTRONIC 17E P • fl'iHOQ'ib DOPfiBflb 0 BPW 20 ■OTILIIFWKIMelectronic CrMtiw Ttdw togies r - w - s v Silicon PN Planar Photodiode Applications: Sensor for light measuring purposes Features: • Log. correlation between open circuit voltage and illuminance from 10"a till 10 ’ Ix
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5033/IEC
sk k 1191
fll100
PHOTOVOLTAIC CELL
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bpw 104
Abstract: a850
Text: BPW 34S E9087 SIEMENS FEATURES • Especially suitable tor applicatons from 400 nm toitOOnm • Short switching time (typ. 20 ns) • Suitable for vapor-phase and IR-reflow soldering • Reverse guilwing Characteristics Ta =25°C, standard light A, T=2856k
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E9087)
2856k
BPW34S(
bpw 104
a850
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TS740
Abstract: No abstract text available
Text: SIEMENS BP104BS BPW 34F SILICON PIN PHOTODIODE DAYLIGHT FILTER -Chip position P a cka g e D im e n sio n s in In ch e s m m 234 (5 95) .024 (.6) .0 1 ^ .4 ) —.157 (4.0)— j .145 (3.7) ^ 014(35) 008 20) '„ 1 086 (2 2) 75(19) 075,<19> — f 006( 2} .028(0.7)
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BP104BS
104BS
TS740
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BPW 64 photo
Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
Text: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package
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BPW16N
BPW17N
BPW85C
BPW96C
BPV11
BPV23FL
TESS5400
900nm)
BPW 64 photo
BPW 64 photo diode
77NB
D5100
77nA
BPW 56 photo
bpx43-5 smd
BPW 64
BPW 61
bpw 77na
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