Untitled
Abstract: No abstract text available
Text: SFH483 SIEMENS FEATURES • Highly efficient GaAIAs LED • Anode electrically connected to case • High pulse power • High reliability • DIN humidity category per DIN 40040 GOG • Matches BPX63, BP103, LD242, SFH464, photodetectors • Package - TO -18,18 A3 DIN 41870
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SFH483
BPX63,
BP103,
LD242,
SFH464,
TcS25
E7800"
/lE100mA
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Untitled
Abstract: No abstract text available
Text: bOE » • 023Sbü5 DGHbSTH ibi « S I E G ,i SIEMENS AKTIENGESELLSCHAF SIEMENS LD242 GaAs INFRARED EMITTER Package Dimensions in Inches mm 571 (14.51 492(12 5) ,141 (3 6) 118(3 0) “ F 0 1 6 9 (4 3) . 0 161(4.1) 0100 (2 54) f 0 018(045) -106 (2 7) Chip Location
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023SbÃ
LD242
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SFH 462
Abstract: SFH483-L BPX63 SFH463 tc25c25 SFH483-LE7800 SFH483-M din 40040 humidity
Text: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maximum Ratings • Highly Efficient GaAIAs LED Operating and Storage Temperature Range Top, Tstg . -4 0 to + 80°C Junction Temperature (Tj). 100°C
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SFH483
BPX63,
BP103,
E7800"
50KAN
160KyW
SFH 462
SFH483-L
BPX63
SFH463
tc25c25
SFH483-LE7800
SFH483-M
din 40040 humidity
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SFH462-L
Abstract: sfh462 sfh-462 BP103 SFH462LE7800 SFH462-K SFH462L SFH463 SFH46 LF50
Text: SFH462 SIEMENS GaAIAs INFRARED EMfTTER FEATURES Maximum Ratings • • • • • • Operating and Storage Temperature Range Top, T s t g .-40 to + 80°C Junction Temperature (T j). 100°C Reverse Voltage (VR) .3 V
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SFH462
SFH462
SFH462-L
sfh-462
BP103
SFH462LE7800
SFH462-K
SFH462L
SFH463
SFH46
LF50
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J920
Abstract: BP103
Text: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES • GaAs Infrarad Emitting Diode, Fabricated In a Liquid Phase Epitaxy Emits Radiation in Near Infrared Range Cathode Electrically Connected to Case High Efficiency High Reliability Long Lifetime
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LD242
BP103,
BPX63
CT018)
LD242
-LE78MM
J920
BP103
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BPX63
Abstract: ld242
Text: SIEMENS LD242 GaAs INFRARED EMITTER Package Dimensions in Inches mm 186 (4 .7 5 ) 141 (3 .6 ^ .671 ( 1 4 .5 ) 4 9 2 (1 2 5 ) 118 (3 .0 ) r 0 1 6 9 (4 .3 ) 0.100 (2 .5 4 ) _ 0 .1 6 1 (4 . 1) / f r i -5 0 .0 1 8 ( 0 4 5 ) |\ Anode .2 1 6 (6 .5 ) 106 <2 .7 )
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LD242
BP103,
BPX63
LD242
-LE7800f>
-ME7800<
BPX63
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sfh462
Abstract: No abstract text available
Text: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maximum Ratings * Highly Efficient GaAIAs LED O p e ra tin g a n d S to ra g e T e m p e ra tu re R a n g e T0 p. T s t g - 4 0 to + 8 0 °C J u n c tio n T e m p e ra tu re ( T j) .100°C
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SFH483
BPX63,
BP103,
E78D0"
SFH483
sfh462
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L0242
Abstract: No abstract text available
Text: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Emits Radiation In Near Infrared Range * Cathode Electrically Connected to Case Operating and Storage Temperature Range T0P, Tstg . -40° to +80°C
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LD242
BP103,
BPX63
E7800"
L0242
L0242
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SFH462
Abstract: marking LE
Text: SIEMENS SFH462 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm C hip Location FEATURES Maximum Ratings * Radiation: Visible Red Range O perating and Storage Tem perature R ange (T0 p,TSTG) - 4 0 to +80°C Junction Tem perature (T j) . 100°C
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SFH462
BP103,
SFH483
462-K
462-L
SFH462
marking LE
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH483 GaAIAs INFRARED EMITTER FEATURES Maxim um Ratings • Highly Efficient GaAIAs LED O perating and Storage Tem perature Range T0P, Ts tg - 4 0 to + 80°C Jun ction Tem perature (T j). 100°C
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SFH483
E7800"
160K/W
S53b3ab
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SFH462-L
Abstract: sfh-462 SFH462 SFH462-K
Text: SIEMENS SFH462 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm Chip Location FEATURES Maximum Ratings • Radiation: Visible Red Range Operating and Storage Temperature Range (T q p .T s tg ) - 4 0 to + 8 0 °C Junction Temperature ( T j) . 100°C
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SFH462
50KAV
SFH462-L
sfh-462
SFH462
SFH462-K
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Untitled
Abstract: No abstract text available
Text: LD242 SIEMENS GaAs Infrared Emitter Dimensions in inches mm .141 (3.6) .571i (14.5)_ ( _ .492r o( í ? ) 0.100 (2.54) Áíiode 0 .018 (0.45) 106(2.7) GET06625 Crap Location FEATURES • GaAs infrared emitting diode, fabricated In a liquid phase epitaxy process
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LD242
GET06625
BP103,
BPX63,
SFH464,
SFH483
0HSD1S37
/lE100mA
0H801037
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Untitled
Abstract: No abstract text available
Text: LD242 SIEMENS GaAs INFRARED EMITTER Package Dimensions in Inches mm 185(4 75), 141 (3 6^ 118 (3 0) 571 (14 5) 492(12 5) * max * r 0100 (2 54) -p V — 0 169(43) . 0161(4.1) i f e \ t Anode 0.018(0 45) 106(2 7) Chip Location 216(5 5) 204 (5 2) Maximum Ratings
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LD242
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BP103 F
Abstract: No abstract text available
Text: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maxim um Ratings • Highly Efficient GaAIAs LED O p e ra tin g a n d S to ra g e T e m p e ra tu re R a n g e To p , Ts t q - 4 0 to + 80°C * Radiation in Near Infrared Range Ju n c tio n T e m p e ra tu re ( T j ) .100°C
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SFH483
BPX63,
BP103,
E70OO"
BP103 F
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LD242
Abstract: m 7106 L0242 BPX63 bp103
Text: LD242 SIEMENS GaAs INFRARED EMITTER P ack ag e Dim ensions in Inches mm 571 (14 5) 492(12 5) 141 (3 6^ 1 85 (4 75), 118 (3 0) * max- * r 0 1 6 9 (4 3 ) 0 1 6 1 (4.1) 0100 (2 54) _ I t 0 .0 1 8 ( 0 45) 'S ? ! \ Anode 2 1 6 (5 5) 204 (5 2) -1 0 6 (2 7)
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LD242
185j4
BP103,
BPX63
m 7106
L0242
BPX63
bp103
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Phototransistor bp 101
Abstract: BP103 siemens
Text: SIEM ENS BP 103 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. W esentliche M erkmale Features • • • • Speziell geeignet für Anwendungen im
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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