Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)
|
Original
|
ELM35603KA-S
ELM35603KA-S
P2204ND5G
O-252-5
May-03-2006
|
PDF
|
P2103ND5G
Abstract: No abstract text available
Text: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)
|
Original
|
ELM35604KA-S
ELM35604KA-S
P2103ND5G
O-252-5
Mar-01-2005
P2103ND5G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM35600KA-S •General Description ■Features ELM35600KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)
|
Original
|
ELM35600KA-S
ELM35600KA-S
P5806ND5G
O-252-5
MAY-23-2005
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)
|
Original
|
ELM35604KA-S
ELM35604KA-S
P2103ND5G
O-252-5
Mar-01-2005
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • P-channel Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)
|
Original
|
ELM35603KA-S
ELM35603KA-S
P2204ND5G
O-252-5
May-03-2006
|
PDF
|
P2804ND5G
Abstract: No abstract text available
Text: Complementary MOSFET ELM35601KA-S •General Description ■Features ELM35601KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V)
|
Original
|
ELM35601KA-S
ELM35601KA-S
P2804ND5G
O-252-5
SEP-16-2005
P2804ND5G
|
PDF
|
transistor 123 DL
Abstract: No abstract text available
Text: Complementary MOSFET ELM35601KA-S •General Description ■Features ELM35601KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V)
|
Original
|
ELM35601KA-S
ELM35601KA-S
P2804ND5G
O-252-5
SEP-16-2005
transistor 123 DL
|
PDF
|
P2503ND5G
Abstract: No abstract text available
Text: Complementary MOSFET ELM35602KA-S •General Description ■Features ELM35602KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8A Rds(on) < 25mΩ(Vgs=10V) Rds(on) < 37mΩ(Vgs=4.5V)
|
Original
|
ELM35602KA-S
ELM35602KA-S
P2503ND5G
O-252-5
May-04-2005
P2503ND5G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)
|
Original
|
ELM34608AA-N
ELM34608AA-N
P5806NVG
Oct-01-2004
|
PDF
|
P2803NVG
Abstract: No abstract text available
Text: Complementary MOSFET ELM34603AA-N •General Description ■Features ELM34603AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40mΩ(Vgs=4.5V)
|
Original
|
ELM34603AA-N
ELM34603AA-N
P2803NVG
JUL-25-2005
P2803NVG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)
|
Original
|
ELM34608AA-N
ELM34608AA-N
P5806NVG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM34603AA-N •General Description ■Features ELM34603AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40mΩ(Vgs=4.5V)
|
Original
|
ELM34603AA-N
ELM34603AA-N
P2803NVG
JUL-25-2005
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM34600AA-N •General Description ■Features ELM34600AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40.0mΩ(Vgs=4.5V)
|
Original
|
ELM34600AA-N
ELM34600AA-N
20Current
DEC-19-2005
P5003QVG
|
PDF
|
p5003qv
Abstract: No abstract text available
Text: Complementary MOSFET ELM34600AA-N •General Description ■Features ELM34600AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40.0mΩ(Vgs=4.5V)
|
Original
|
ELM34600AA-N
ELM34600AA-N
DEC-19-2005
P5003QVG
p5003qv
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM34604AA-N •General Description ■Features ELM34604AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V)
|
Original
|
ELM34604AA-N
ELM34604AA-N
P2804NVG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM34604AA-N •General Description ■Features ELM34604AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V)
|
Original
|
ELM34604AA-N
ELM34604AA-N
P2804NVG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package
|
Original
|
2N7002DW
SC70-6
OT363)
2N7002DW
|
PDF
|
2N7002DW
Abstract: 2N7002DW SOT363 2N7002DW transistor SC70-6
Text: 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package
|
Original
|
2N7002DW
SC70-6
OT363)
2N7002DW
2N7002DW SOT363
2N7002DW transistor
SC70-6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N7002V/VA N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package
|
Original
|
2N7002V/VA
2N7002V/VA
|
PDF
|
ZVT uc3875
Abstract: 500w Full bridge transformer UC3875 ZVS design APT9804 unitrode manual sem-900 phase shifted zero voltage SEM900 UC3875 ZVT full bridge pwm controller uc3875 Bill Andreycak
Text: APT9804 Ò APPLICATION NOTE By: Kenneth Dierberger Richard Redl Leo Saro High-Voltage MOSFET Behavior in Soft-Switching Converters: Analysis and Reliability Improvements Presented at Intelec ‘98 San Francisco Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating
|
Original
|
APT9804
SEM-900,
UC3875
U-136A.
135/D.
ZVT uc3875
500w Full bridge transformer
UC3875 ZVS design
APT9804
unitrode manual sem-900
phase shifted zero voltage
SEM900
ZVT full bridge pwm controller uc3875
Bill Andreycak
|
PDF
|
st smd diode marking to3
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard P-channel 100 V, 30 A Power MOSFET Preliminary data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications ■ Satellite
|
Original
|
STRH40N6
STRH40N6S1
STRH40N6S
st smd diode marking to3
|
PDF
|
st smd diode marking to3
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard P-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications
|
Original
|
STRH40N6
STRH40N6S
st smd diode marking to3
|
PDF
|
HV33010
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard P-channel 100 V, 30 A Power MOSFET Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications ■ Satellite ■ High reliability
|
Original
|
STRH40N6
STRH40N6S1
STRH40N6SG
HV33010
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 TO-254AA Applications ■ Satellite
|
Original
|
STRH100N6
O-254AA
STRH100N6HY1
|
PDF
|
