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    BODY EFFECT OF MOSFET Search Results

    BODY EFFECT OF MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    BODY EFFECT OF MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)


    Original     		PDF ELM35603KA-S ELM35603KA-S P2204ND5G O-252-5 May-03-2006

    P2103ND5G

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)


    Original     		PDF ELM35604KA-S ELM35604KA-S P2103ND5G O-252-5 Mar-01-2005 P2103ND5G

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35600KA-S •General Description ■Features ELM35600KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)


    Original     		PDF ELM35600KA-S ELM35600KA-S P5806ND5G O-252-5 MAY-23-2005

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)


    Original     		PDF ELM35604KA-S ELM35604KA-S P2103ND5G O-252-5 Mar-01-2005

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • P-channel Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)


    Original     		PDF ELM35603KA-S ELM35603KA-S P2204ND5G O-252-5 May-03-2006

    P2804ND5G

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35601KA-S •General Description ■Features ELM35601KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V)


    Original     		PDF ELM35601KA-S ELM35601KA-S P2804ND5G O-252-5 SEP-16-2005 P2804ND5G

    transistor 123 DL

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35601KA-S •General Description ■Features ELM35601KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V)


    Original     		PDF ELM35601KA-S ELM35601KA-S P2804ND5G O-252-5 SEP-16-2005 transistor 123 DL

    P2503ND5G

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35602KA-S •General Description ■Features ELM35602KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8A Rds(on) < 25mΩ(Vgs=10V) Rds(on) < 37mΩ(Vgs=4.5V)


    Original     		PDF ELM35602KA-S ELM35602KA-S P2503ND5G O-252-5 May-04-2005 P2503ND5G

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)


    Original     		PDF ELM34608AA-N ELM34608AA-N P5806NVG Oct-01-2004

    P2803NVG

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34603AA-N •General Description ■Features ELM34603AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40mΩ(Vgs=4.5V)


    Original     		PDF ELM34603AA-N ELM34603AA-N P2803NVG JUL-25-2005 P2803NVG

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)


    Original     		PDF ELM34608AA-N ELM34608AA-N P5806NVG

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34603AA-N •General Description ■Features ELM34603AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40mΩ(Vgs=4.5V)


    Original     		PDF ELM34603AA-N ELM34603AA-N P2803NVG JUL-25-2005

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34600AA-N •General Description ■Features ELM34600AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40.0mΩ(Vgs=4.5V)


    Original     		PDF ELM34600AA-N ELM34600AA-N 20Current DEC-19-2005 P5003QVG

    p5003qv

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34600AA-N •General Description ■Features ELM34600AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40.0mΩ(Vgs=4.5V)


    Original     		PDF ELM34600AA-N ELM34600AA-N DEC-19-2005 P5003QVG p5003qv

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34604AA-N •General Description ■Features ELM34604AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V)


    Original     		PDF ELM34604AA-N ELM34604AA-N P2804NVG

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM34604AA-N •General Description ■Features ELM34604AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V)


    Original     		PDF ELM34604AA-N ELM34604AA-N P2804NVG

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package


    Original     		PDF 2N7002DW SC70-6 OT363) 2N7002DW

    2N7002DW

    Abstract: 2N7002DW SOT363 2N7002DW transistor SC70-6
    Text: 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package


    Original     		PDF 2N7002DW SC70-6 OT363) 2N7002DW 2N7002DW SOT363 2N7002DW transistor SC70-6

    Untitled

    Abstract: No abstract text available
    Text: 2N7002V/VA N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package


    Original     		PDF 2N7002V/VA 2N7002V/VA

    ZVT uc3875

    Abstract: 500w Full bridge transformer UC3875 ZVS design APT9804 unitrode manual sem-900 phase shifted zero voltage SEM900 UC3875 ZVT full bridge pwm controller uc3875 Bill Andreycak
    Text: APT9804 Ò APPLICATION NOTE By: Kenneth Dierberger Richard Redl Leo Saro High-Voltage MOSFET Behavior in Soft-Switching Converters: Analysis and Reliability Improvements Presented at Intelec ‘98 San Francisco Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating


    Original     		PDF APT9804 SEM-900, UC3875 U-136A. 135/D. ZVT uc3875 500w Full bridge transformer UC3875 ZVS design APT9804 unitrode manual sem-900 phase shifted zero voltage SEM900 ZVT full bridge pwm controller uc3875 Bill Andreycak

    st smd diode marking to3

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard P-channel 100 V, 30 A Power MOSFET Preliminary data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications ■ Satellite


    Original     		PDF STRH40N6 STRH40N6S1 STRH40N6S st smd diode marking to3

    st smd diode marking to3

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard P-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications


    Original     		PDF STRH40N6 STRH40N6S st smd diode marking to3

    HV33010

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard P-channel 100 V, 30 A Power MOSFET Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications ■ Satellite ■ High reliability


    Original     		PDF STRH40N6 STRH40N6S1 STRH40N6SG HV33010

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 TO-254AA Applications ■ Satellite


    Original     		PDF STRH100N6 O-254AA STRH100N6HY1