MAX2551
Abstract: ECG105 CC645
Text: PHILIPS E C G INC 17E bLi53ci2ô 0003at.l 7 T-77-05-05 E C G 1057 FM-IF AMPLIFIER, AF PRE-AMPLIFIER semiconductors QUICK REFERENCE DATA Units In mm Symbol Value Unit ’tot 19 mA Gy 73 dB v l lïm 43 dBvi V o^F) 75 m^rms AMR 45 dB P t-T a Î W £ \ *» V
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bLi53c
0003at
T-77-05-05
ECG1057
ECQ1057
0003fib3
VlO-14
MAX2551
ECG105
CC645
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Untitled
Abstract: No abstract text available
Text: N AMER PHI L I P S / D I S CR E T E bbSBTBl 0015531 h □ hE D RZ2731B45W r-s s - 3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.
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RZ2731B45W
001SH3S
7Z24137
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M3155
Abstract: M3160 pp m3155 g0s2710 m3166 BYV133F BYV133F-35 T-03-19
Text: DEVELOPMENT DATA BYV133F SERIES T h is data shee t con ta in s advance in fo rm a tio n and s p e cifica tio n s are su b je ct to c h an ge w ith o u t notice. N AMER PHILIPS/DISCRETE 25E D • ^53^31 0 0 2570“! 2 ■ . SCHOTTKY-BARRIER ELECTRICALLY-ISOLATED T - Ô 3 - 1 9
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BYV133F
OT-186
bS3131
0DE2717
T-03-19
M3160
M3155
M3160
pp m3155
g0s2710
m3166
BYV133F-35
T-03-19
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ECG933
Abstract: ECG932 ECG934
Text: PH ILIP S E C G INC 17E ECG Semiconductors — .875" 22,231MAX. r ,450"(ll.43 ^ L Absolute Maximum Ratings Symbol Rating Unit V Input Voltage ECG932 ECG933 ECG934 V| Internal Power Dissipation Pd 50 @ T c = 25°C W Ti T stg Oto 150 °c °c Storage Temperature Range
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ECG93X
ECG932
ECG933
ECG934
ECG932,
ECG933,
ECG934
bLi53c15ä
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