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    BLF6G22L Price and Stock

    Ampleon BLF6G22L-40P,112

    RF MOSFET LDMOS 28V LDMOST
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    Ampleon BLF6G22L-40P,118

    RF MOSFET LDMOS 28V LDMOST
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    Ampleon BLF6G22LS-40P,112

    RF MOSFET LDMOS 28V LDMOST
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    Ampleon BLF6G22LS-100,112

    RF MOSFET LDMOS 28V SOT502B
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    Ampleon BLF6G22L-40BN,112

    RF MOSFET LDMOS 28V CDFM6
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    BLF6G22L Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF6G22L-40BN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G22L-40BN,112 NXP Semiconductors BLF6G22L-40BN - Power LDMOS transistor, SOT1112A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G22L-40BN,118 NXP Semiconductors BLF6G22L-40BN - Power LDMOS transistor, SOT1112A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF6G22L-40P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G22L-40P,112 NXP Semiconductors BLF6G22L-40P - Power LDMOS transistor, SOT1121A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G22L-40P,118 NXP Semiconductors BLF6G22L-40P - Power LDMOS transistor, SOT1121A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB Original PDF
    BLF6G22LS-100 NXP Semiconductors BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original PDF
    BLF6G22LS-100,112 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.2DB SOT502B Original PDF
    BLF6G22LS-100,118 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.2DB SOT502B Original PDF
    BLF6G22LS-100,112 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB; Package: SOT502B (LDMOST); Container: Blister pack Original PDF
    BLF6G22LS-100,112 NXP Semiconductors BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original PDF
    BLF6G22LS-100,118 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13" Original PDF
    BLF6G22LS-100,118 NXP Semiconductors BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original PDF
    BLF6G22LS-130 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G22LS-130,112 NXP Semiconductors Power LDMOS transistor; Package: SOT502B (LDMOST); Container: Blister pack Original PDF
    BLF6G22LS-130,118 NXP Semiconductors Power LDMOS transistor; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13" Original PDF
    BLF6G22LS-180PN,11 NXP Semiconductors BLF6G22LS-180PN - Power LDMOS transistor, SOT539B Package, Standard Marking, Tube - DSC Bulk Pack Original PDF
    BLF6G22LS-180PN:11 NXP Semiconductors BLF6G22LS-180PN - Power LDMOS transistor, SOT539B Package, Standard Marking, Reel Pack, SMD Original PDF
    BLF6G22LS-180RN,11 NXP Semiconductors Power LDMOS transistor, SOT502B (LDMOST), Blister pack Original PDF

    BLF6G22L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J122 SMD TRANSISTOR

    Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
    Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22L-40BN J122 SMD TRANSISTOR BLC6G22L-40BN/2 800B BLF6G22L-40BN

    transistor D 1002

    Abstract: BLF6G22LS-100 RF35
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 02 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22LS-100 BLF6G22LS-100 transistor D 1002 RF35

    Untitled

    Abstract: No abstract text available
    Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22L-40BN

    BLF6G22LS-100

    Abstract: RF35 TRANSISTOR SMD BV
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22LS-100 BLF6G22LS-100 RF35 TRANSISTOR SMD BV

    Untitled

    Abstract: No abstract text available
    Text: BLF6G22LS-75 Power LDMOS transistor Rev. 02 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22LS-75 BLF6G22LS-75

    SmD TRANSISTOR a41

    Abstract: No abstract text available
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22LS-100 SmD TRANSISTOR a41

    BLF6G22LS-100

    Abstract: RF35
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22LS-100 BLF6G22LS-100 RF35

    BLF6G22-180PN

    Abstract: No abstract text available
    Text: BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 — 4 March 2010 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22-180PN; BLF6G22LS-180PN BLF6G22-180PN 22LS-180PN

    RF35

    Abstract: 1961 30 TRANSISTOR
    Text: BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22-180RN; BLF6G22LS-180RN BLF6G22-180RN 22LS-180RN RF35 1961 30 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 5 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22-180PN; BLF6G22LS-180PN BLF6G22-180PN 22LS-180PN

    C4532X7R1E475M

    Abstract: AVX12065C224K BLF6G22LS-130 GRM217BR71H104KA11L RO4350B capacitor 220 uf
    Text: BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22LS-130 BLF6G22LS-130 C4532X7R1E475M AVX12065C224K GRM217BR71H104KA11L RO4350B capacitor 220 uf

    BLF6G22LS-75

    Abstract: RF35
    Text: BLF6G22LS-75 Power LDMOS transistor Rev. 02 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22LS-75 BLF6G22LS-75 RF35

    GP AAA

    Abstract: No abstract text available
    Text: BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Rev. 1 — 22 September 2011 Product data sheet 1. Product profile 1.1 General description LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.


    Original     		PDF BLF6G22L-40P; BLF6G22LS-40P BLF6G22L-40P 6G22LS-40P GP AAA

    BLF6G22LS-75

    Abstract: RF35 TRANSISTOR 751
    Text: BLF6G22LS-75 Power LDMOS transistor Rev. 01 — 8 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22LS-75 BLF6G22LS-75 RF35 TRANSISTOR 751

    Untitled

    Abstract: No abstract text available
    Text: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 — 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22LS-40BN

    Untitled

    Abstract: No abstract text available
    Text: BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 03 — 11 December 2009 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1.


    Original     		PDF BLF6G22-180PN; BLF6G22LS-180PN BLF6G22-180PN 22LS-180PN

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    Untitled

    Abstract: No abstract text available
    Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.


    Original     		PDF

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Pallet VHF Power Amplifier

    Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
    Text: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market


    Original     		PDF BLF87x/88x) BLF57x) IS-95 BLF6G38S-25 OT608B BLF6G38-25 OT608A BLF6G38-10 Pallet VHF Power Amplifier BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF

    QUBiC4X

    Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
    Text: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers


    Original     		PDF 12x12 LQFP48 QUBiC4X BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23