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    BLF6G10LS Price and Stock

    Rochester Electronics LLC BLF6G10LS-200RN:11

    RF MOSFET LDMOS 28V SOT502B
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    DigiKey BLF6G10LS-200RN:11 Bulk 48 4
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    Ampleon BLF6G10LS-200RN

    RF MOSFET LDMOS 28V SOT502B
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    Ampleon BLF6G10LS-160RN,11

    RF MOSFET LDMOS 32V SOT502B
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    Ampleon BLF6G10LS-200RN,11

    RF MOSFET LDMOS 28V SOT502B
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    Ampleon BLF6G10LS-200RN:11

    RF MOSFET LDMOS 28V SOT502B
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    Avnet Americas BLF6G10LS-200RN:11 Tray 4 Weeks 5
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    Rochester Electronics BLF6G10LS-200RN:11 48 1
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    BLF6G10LS Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BLF6G10LS-135R,112 NXP Semiconductors RF FETs, Discrete Semiconductor Products, IC BASESTATION FINAL SOT502B Original PDF
    BLF6G10LS-135R,118 NXP Semiconductors RF FETs, Discrete Semiconductor Products, IC BASESTATION FINAL SOT502B Original PDF
    BLF6G10LS-135RN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G10LS-135RN,11 NXP Semiconductors BLF6G10LS-135RN - Power LDMOS transistor, SOT502B Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF6G10LS-135RN:11 NXP Semiconductors BLF6G10LS-135RN - Power LDMOS transistor, SOT502B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G10LS-160RN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G10LS-160RN,11 NXP Semiconductors BLF6G10LS-160RN - Power LDMOS transistor, SOT502B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G10LS-160RN:11 NXP Semiconductors BLF6G10LS-160RN - Power LDMOS transistor, SOT502B Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF6G10LS-200 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G10LS-200,112 NXP Semiconductors RF FETs, Discrete Semiconductor Products, IC BASESTATION FINAL SOT502B Original PDF
    BLF6G10LS-200,118 NXP Semiconductors RF FETs, Discrete Semiconductor Products, IC BASESTATION FINAL SOT502B Original PDF
    BLF6G10LS-200R NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G10LS-200R,112 NXP Semiconductors RF FETs, Discrete Semiconductor Products, IC BASESTATION FINAL SOT502B Original PDF
    BLF6G10LS-200R,118 NXP Semiconductors RF FETs, Discrete Semiconductor Products, IC BASESTATION FINAL SOT502B Original PDF
    BLF6G10LS-200RN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G10LS-200RN,11 NXP Semiconductors BLF6G10LS-200RN - Power LDMOS transistor, SOT502B Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF6G10LS-200RN:11 NXP Semiconductors BLF6G10LS-200RN - Power LDMOS transistor, SOT502B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G10LS-260PRN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G10LS-260PRN,1 NXP Semiconductors BLF6G10LS-260PRN - Power LDMOS transistor, SOT539B Package, Standard Marking, Reel Pack, SMD Original PDF
    BLF6G10LS-260PRN:1 NXP Semiconductors BLF6G10LS-260PRN - Power LDMOS transistor, SOT539B Package, Standard Marking, Tube - DSC Bulk Pack Original PDF

    BLF6G10LS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLF6G10LS-200RN

    Abstract: BLF6G10-200RN RF35 A1118
    Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN BLF6G10LS-200RN RF35 A1118

    BLF6G10LS-135RN

    Abstract: 2360D BLF6G10-135RN RF35 1961 30 TRANSISTOR
    Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN BLF6G10LS-135RN 2360D RF35 1961 30 TRANSISTOR

    23N50

    Abstract: No abstract text available
    Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN 23N50

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN

    2360d

    Abstract: BLF6G10-135RN BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST
    Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 01 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN 2360d BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST

    transistor 9575

    Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10LS-200 Power LDMOS transistor Rev. 02 — 24 November 2008 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10LS-200 BLF6G10LS-200

    BLF6G10LS-135R

    Abstract: f4 smd transistor mobile rf power amplifier transistor RF35 2360d
    Text: BLF6G10LS-135R Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10LS-135R BLF6G10LS-135R f4 smd transistor mobile rf power amplifier transistor RF35 2360d

    BLF6G10-200RN

    Abstract: BLF6G10LS-200RN RF35 vj1206y224kxb
    Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 01 — 19 January 2009 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 688 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN BLF6G10LS-200RN RF35 vj1206y224kxb

    BLF6G10LS-160RN

    Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN

    BLC6G10LS-160

    Abstract: BLF6G10LS-200 RF35
    Text: BLF6G10LS-200 Power LDMOS transistor Rev. 01 — 18 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10LS-200 BLF6G10LS-200 BLC6G10LS-160 RF35

    vj1206y224kxb

    Abstract: BLF6G10LS-200R RF35
    Text: BLF6G10LS-200R Power LDMOS transistor Rev. 01 — 21 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10LS-200R BLF6G10LS-200R vj1206y224kxb RF35

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    Untitled

    Abstract: No abstract text available
    Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.


    Original     		PDF

    BLF4G08LS-160A

    Abstract: J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A
    Text: NXP Semiconductors Product Discontinuation DN66 June 30, 2010 SEE DN66 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. FOR ADDED INFORMATION, REFER TO NXP WEB-SITE "http://www.nxp.com/products/eol/"


    Original     		PDF 31-Dec-10 30-Jun-11 UBA2074AT/N1 UBA2074T/N1 UBA2074T/N1 31-Mar-11 UBA2074TS/N1 UBA2074TS/N1 BLF4G08LS-160A J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    Pallet VHF Power Amplifier

    Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
    Text: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market


    Original     		PDF BLF87x/88x) BLF57x) IS-95 BLF6G38S-25 OT608B BLF6G38-25 OT608A BLF6G38-10 Pallet VHF Power Amplifier BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF

    QUBiC4X

    Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
    Text: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers


    Original     		PDF 12x12 LQFP48 QUBiC4X BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H