BLF1 Search Results

BLF1 Result Highlights (5)

Part	Manufacturer	Description
BLF175	Rochester Electronics LLC	BLF175 - HF/VHF Power VDMOS Transistor (Ampleon Die)
BLF1046	Rochester Electronics LLC	BLF1046 - UHF Power LDMOS Transistor (Ampleon Die)
BLF177	Rochester Electronics LLC	BLF177 - HF/VHF Power VDMOS Transistor (Ampleon Die)
BLF1043	Rochester Electronics LLC	BLF1043 - UHF10W Power LDMOS Transistor (Ampleon Die)
BLF175C	Rochester Electronics LLC	BLF175C - HF/VHF Power VDMOS Transistor (Cus Special) (Ampleon Die)

BLF1 Price and Stock

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Ampleon BLF188XRGJ RF MOSFET LDMOS 50V CDFM4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BLF188XRGJ	Digi-Reel	296		1	1 $220.8 10 $188.388 100 $188.388 1000 $188.388 10000 $188.388	Buy Now
	BLF188XRGJ	Cut Tape	296		1	1 $220.8 10 $188.388 100 $188.388 1000 $188.388 10000 $188.388	Buy Now
	BLF188XRGJ	Reel	200		100	1 - 10 - 100 $196.3601 1000 $196.3601 10000 $196.3601	Buy Now
Toshiba America Electronic Components TLP628M(GB-LF1,E TR COUPLER; DIP4; ROHS; GULL WIN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TLP628M(GB-LF1,E	Tube	100		1	1 $0.82 10 $0.502 100 $0.82 1000 $0.2569 10000 $0.2475	Buy Now
Avnet Americas	TLP628M(GB-LF1,E	Tube		24 Weeks	100	1 - 10 - 100 $0.30294 1000 $0.2673 10000 $0.2673	Buy Now
Mouser Electronics	TLP628M(GB-LF1,E					1 $0.82 10 $0.502 100 $0.34 1000 $0.247 10000 $0.247	Get Quote
Ampleon BLF184XRSU RF MOSFET LDMOS 50V LDMOST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BLF184XRSU	Tray	83		1	1 $166.21 10 $166.21 100 $157.4375 1000 $157.4375 10000 $157.4375	Buy Now
Flip Electronics	BLF184XRSU		637			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TLP241B(LF1,F SSR RELAY SPST-NO 2A 0-100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TLP241B(LF1,F	Tube	56		1	1 $3.1 10 $2.064 100 $3.1 1000 $1.25821 10000 $1.1497	Buy Now
Mouser Electronics	TLP241B(LF1,F		496			1 $3.13 10 $2.08 100 $1.6 1000 $1.24 10000 $1.15	Buy Now
TTI	TLP241B(LF1,F	Tube			100	1 - 10 - 100 $1.38 1000 $1.38 10000 $1.38	Buy Now
Ampleon BLF178XR,112 RF MOSFET LDMOS 50V SOT539A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BLF178XR,112	Tray	50		1	1 $254.56 10 $254.56 100 $254.56 1000 $254.56 10000 $254.56	Buy Now
Flip Electronics	BLF178XR,112		381			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more BLF1 price and stock on Findchips.com

BLF1 Datasheets (139)

Part	Manufacturer	Description	Datasheet Type	PDF
BLF1	Littelfuse	Fuse	Original	PDF
BLF1	Littelfuse	Axial Lead and Cartridge Fuses - Midget	Original	PDF
BLF10	Littelfuse	Axial Lead and Cartridge Fuses - Midget	Original	PDF
BLF100-S5	Beijing LEM Electronics	Current Sensor	Original	PDF
BLF100-S7	Beijing LEM Electronics	Current Sensor	Original	PDF
BLF100-S7B	Beijing LEM Electronics	Current Sensor	Original	PDF
BLF1043	Philips Semiconductors	UHF Power LDMOS Transistor	Original	PDF
BLF1043	Philips Semiconductors	UHF power LDMOS transistor	Original	PDF
BLF1043	Philips Semiconductors	UHF power LDMOS transistor	Original	PDF
BLF1043	Philips Semiconductors	UHF Power LDMOS Transistor	Scan	PDF
BLF1043,112	NXP Semiconductors	UHF power LDMOS transistor - Application: GSM, Broadcast and UHF Communication transmitters ; Description: UHF LDMOS RF POWER Transistor ; Efficiency: 55@CW %; Frequency: 0 - 960 MHz; Load power: 10 (CW) W; Operating voltage: 26 VDC; Power gain: 18.5 dB; Package: SOT538A (CDIP2); Container: Blister pack	Original	PDF
BLF1043,135	NXP Semiconductors	UHF power LDMOS transistor - Application: GSM, Broadcast and UHF Communication transmitters ; Description: UHF LDMOS RF POWER Transistor ; Efficiency: 55@CW %; Frequency: 0 - 960 MHz; Load power: 10 (CW) W; Operating voltage: 26 VDC; Power gain: 18.5 dB; Package: SOT538A (CDIP2); Container: Tape reel smd	Original	PDF
BLF1046	Philips Semiconductors	UHF Power LDMOS Transistor	Original	PDF
BLF1046	Philips Semiconductors	UHF power LDMOS transistor	Original	PDF

BLF1046	Philips Semiconductors	UHF power LDMOS transistor	Original	PDF
BLF1046	Philips Semiconductors	UHF power LDMOS transistor	Original	PDF
BLF1046	Philips Semiconductors	UHF power LDMOS transistor	Scan	PDF
BLF1046,112	NXP Semiconductors	UHF power LDMOS transistor - Application: UHF Communication transmitters ; Description: UHF LDMOS RF POWER Transistor ; Efficiency: 40@2-Tone %; Frequency: 0 - 960 MHz; Load power: 45 (2-Tone) W; Operating voltage: 26 VDC; Power gain: 17 dB; Package: SOT467C (LDMOST); Container: Blister pack	Original	PDF
BLF1046,135	NXP Semiconductors	UHF power LDMOS transistor - Application: UHF Communication transmitters ; Description: UHF LDMOS RF POWER Transistor ; Efficiency: 40@2-Tone %; Frequency: 0 - 960 MHz; Load power: 45 (2-Tone) W; Operating voltage: 26 VDC; Power gain: 17 dB; Package: SOT467C (LDMOST); Container: Tape reel smd	Original	PDF
BLF1046/P	Philips Semiconductors	UHF power LDMOS transistor	Original	PDF

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BLF1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TRANSISTOR CW 7808 Abstract: cw 7808 7808 cw SOT502A 7808 voltage regulator ACPR400 BLF1049 transistor 7808 Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D379 BLF1049 Base station LDMOS transistor Product specification Supersedes data of 2001 Dec 05 2003 May 14 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 FEATURES DESCRIPTION	Original	PDF	M3D379 BLF1049 OT502A ACPR400 SCA75 613524/03/pp12 TRANSISTOR CW 7808 cw 7808 7808 cw SOT502A 7808 voltage regulator ACPR400 BLF1049 transistor 7808
Untitled Abstract: No abstract text available Text: BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF10M6135; BLF10M6LS135 BLF10M6135
BLF1047 Abstract: BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 1999 Jul 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 FEATURES PINNING - SOT541A • High power gain PIN DESCRIPTION	Original	PDF	M3D390 BLF1047 OT541A Electronics1999 BLF1047 BP317
BLF1046 Abstract: BP317 TEKELec 467 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Preliminary specification 2000 Sep 20 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1046 PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION	Original	PDF	M3D381 BLF1046 OT467C 603516/04/pp11 BLF1046 BP317 TEKELec 467
BLF177 Abstract: No abstract text available Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability	Original	PDF	BLF177 OT121 OT121B 10tnm BLF177
Untitled Abstract: No abstract text available Text: L/-*ioauet±, Line. tJ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HFA/HF power MOS transistor FEATURES BLF175 PIN CONFIGURATION • High power gain « Low intermodulation distortion • Easy power control	Original	PDF	BLF175 OT123A
MRF255 equivalent Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255 Text: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341	Original	PDF	MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 MRF255 equivalent motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
A17200 Abstract: No abstract text available Text: BLF145 HF power MOS transistor Rev. 04 — 5 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	PDF	BLF145 BLF145 A17200
tp2304 Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12	Original	PDF	AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 tp2304 TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
BLF1046 Abstract: BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 Nov 02 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1046 FEATURES PINNING - SOT467C	Original	PDF	M3D381 BLF1046 OT467C 603516/04/pp8 BLF1046 BP317
BLF175 Abstract: No abstract text available Text: BLF175 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF175 is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: S • PG = 24 dB Typ. at 30 W /28 MHz • ηD = 40% Typ. at 30 W /28 MHz	Original	PDF	BLF175 BLF175
BLF188XR NXP Abstract: No abstract text available Text: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 2 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.	Original	PDF	BLF188XR; BLF188XRS BLF188XR BLF188XR NXP
BLF188XR NXP Abstract: blf188 Text: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.	Original	PDF	BLF188XR; BLF188XRS BLF188XR BLF188XR NXP blf188
Untitled Abstract: No abstract text available Text: BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev. 1 — 1 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	PDF	BLF10M6200; BLF10M6LS200 BLF10M6200

Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1998 Jul 07 1998 Aug 05 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 PINNING - SOT502A	Original	PDF	M3D379 BLF1048 BLF1048 OT502A SCA60 125108/00/03/pp8
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 2001 Jan 25 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 PINNING - SOT541A FEATURES • High power gain PIN DESCRIPTION	Original	PDF	M3D390 BLF1047 BLF1047 OT541A OT541A) 603516/04/pp11
transistor d 965 al Abstract: TRANSISTOR D 471 BLF1048 BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 July 01 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 FEATURES PINNING - SOT502A	Original	PDF	M3D379 BLF1048 OT502A 603516/05/pp8 transistor d 965 al TRANSISTOR D 471 BLF1048 BP317
BLF177 Abstract: 8830 transistor transistor marking code HF Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF177 HF/VHF power MOS transistor Product specification Supersedes data of 2003 Jul 21 2004 Dec 17 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain	Original	PDF	M3D060 BLF177 MBB072 MLA876 OT121B SCA76 R02/05/pp19 BLF177 8830 transistor transistor marking code HF
smd JH transistor Abstract: transistor smd z3 transistor SMD Z2 smd transistor z4 capacitor tantalum smd Transistor z1 smd CBD46 34S2 MDB150 M3D438 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF1043 UHF power LDMOS transistor Product specification Supersedes data of 2002 November 11 2003 Mar 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • Typical 2-tone performance at a supply voltage of 26 V	Original	PDF	M3D438 BLF1043 SCA75 613524/07/pp12 771-BLF1043 BLF1043 smd JH transistor transistor smd z3 transistor SMD Z2 smd transistor z4 capacitor tantalum smd Transistor z1 smd CBD46 34S2 MDB150 M3D438
BLF177,112 Abstract: transistor list sot121B package snw-eq-608 MBK-408 TRIMMER cap no-2222 809 07015 NXPBLF177 BLF177C Text: BLF177 HF/VHF power MOS transistor Rev. 06 — 24 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	PDF	BLF177 BLF177 771-BLF177 BLF177,112 transistor list sot121B package snw-eq-608 MBK-408 TRIMMER cap no-2222 809 07015 NXPBLF177 BLF177C
BLF177 Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244 Text: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control	OCR Scan	PDF	BLF177 OT121 MBA379 philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244
mosfet K 2865 Abstract: blf146 sot121 Text: N AUER PHILIPS/DISCRETE DfaE D M bb53^31 001330? DEVELOPMENT DATA BLF146 T h is data sheet contains advance information and specifications are subject to change w ithout notice. 86D 01064 D 7 - - 31 - I 3 R.F. POWER MOSFET N-channel enhancement mode vertical D-MOS transistor intended fo r use in professional transmitters	OCR Scan	PDF	BLF146 OT-121) OT-121. bbS3131 QG13B0M mosfet K 2865 blf146 sot121
transistor tt 2222 Abstract: TT 2222 enamelled copper wire tables 2222 123 capacitor philips pu enamelled copper wire TL 2222 4312 020 36640 ferroxcube wideband hf choke 22 nF, 63 SOT123 Package Text: Philips Semiconductors Product specification HF power MOS transistor PHILIPS T -3 ^ -// INTERNATIONAL FEATURES 5bE D I 711002b DOMBbTM BLF145 437 IPHIN PIN CONFIGURATION • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch.	OCR Scan	PDF	T-37-IÃ BLF145 OT123 OT123 711002b MBB072 4-J11 9-j14 5-j15 transistor tt 2222 TT 2222 enamelled copper wire tables 2222 123 capacitor philips pu enamelled copper wire TL 2222 4312 020 36640 ferroxcube wideband hf choke 22 nF, 63 SOT123 Package
Philips 2222 capacitor Abstract: philips capacitor philips capacitor 2222 Text: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control	OCR Scan	PDF	BLF177 OT121 Philips 2222 capacitor philips capacitor philips capacitor 2222

BLF1 Search Results

BLF1 Result Highlights (5)

BLF1 Price and Stock

Ampleon BLF188XRGJ

Toshiba America Electronic Components TLP628M(GB-LF1,E

Ampleon BLF184XRSU

Toshiba America Electronic Components TLP241B(LF1,F

Ampleon BLF178XR,112

BLF1 Datasheets (139)

BLF1 Datasheets Context Search

TRANSISTOR CW 7808

Untitled

BLF1047

BLF1046

BLF177

Untitled

MRF255 equivalent

A17200

tp2304

BLF1046

BLF175

BLF188XR NXP

BLF188XR NXP

Untitled

Untitled

Untitled

transistor d 965 al

BLF177

smd JH transistor

BLF177,112

BLF177

mosfet K 2865

transistor tt 2222

Philips 2222 capacitor