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    BLC8G27LS Price and Stock

    Rochester Electronics LLC

    Rochester Electronics LLC BLC8G27LS-100AVY

    RF MOSFET LDMOS 28V DFM6
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    DigiKey BLC8G27LS-100AVY Bulk 2,147 5
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    Rochester Electronics LLC BLC8G27LS-140AVY

    RF MOSFET LDMOS 28V DFM6
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    DigiKey BLC8G27LS-140AVY Bulk 258 5
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    Rochester Electronics LLC BLC8G27LS-180AVZ

    RF MOSFET LDMOS 28V SOT1275-3
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    DigiKey BLC8G27LS-180AVZ Bulk 115 5
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    Rochester Electronics LLC BLC8G27LS-60AVY

    RF MOSFET SOT1275-3
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    DigiKey BLC8G27LS-60AVY Bulk 100 7
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    Rochester Electronics LLC BLC8G27LS-100AVZ

    RF MOSFET LDMOS 28V DFM6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLC8G27LS-100AVZ Bulk 46 5
    • 1 -
    • 10 $63.11
    • 100 $63.11
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    BLC8G27LS Datasheets (23)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    BLC8G27LS-100AVY Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 15.5DB SOT12751 Original PDF
    BLC8G27LS-100AVZ Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 15.5DB SOT12751 Original PDF
    BLC8G27LS-140AVY Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 14.5DB SOT12751 Original PDF
    BLC8G27LS-140AVZ Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 14.5DB SOT12751 Original PDF
    BLC8G27LS-160AV NXP Semiconductors Power LDMOS transistor Original PDF
    BLC8G27LS-160AVJ Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 14.3DB SOT12751 Original PDF
    BLC8G27LS-160AVJ NXP Semiconductors RF FETs, Discrete Semiconductor Products, IC TRANS LDMOS 160W 6DFM Original PDF
    BLC8G27LS-160AVJ NXP Semiconductors BLC8G27LS-160AV - BLC8G27LS-160AV - Power LDMOS transistor Original PDF
    BLC8G27LS-160AVU Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 14.3DB SOT12751 Original PDF
    BLC8G27LS-160AVU NXP Semiconductors RF FETs, Discrete Semiconductor Products, IC TRANS LDMOS 160W 6DFM Original PDF
    BLC8G27LS-160AVU NXP Semiconductors BLC8G27LS-160AV - BLC8G27LS-160AV - Power LDMOS transistor Original PDF
    BLC8G27LS-180AVY Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 14DB SOT12753 Original PDF
    BLC8G27LS-180AVZ Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 14DB SOT12753 Original PDF
    BLC8G27LS-210PVY Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 17DB SOT12513 Original PDF
    BLC8G27LS-210PVZ Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 17DB SOT12513 Original PDF
    BLC8G27LS-240AV NXP Semiconductors Power LDMOS transistor Original PDF
    BLC8G27LS-240AVJ NXP Semiconductors BLC8G27LS-240AV - BLC8G27LS-240AV - Power LDMOS transistor Original PDF
    BLC8G27LS-240AVU NXP Semiconductors BLC8G27LS-240AV - BLC8G27LS-240AV - Power LDMOS transistor Original PDF
    BLC8G27LS-245AVJ NXP USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - TRANS RF 240W 65V LDMOS SOT1251 Original PDF
    BLC8G27LS-245AVY Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 14.5DB SOT12512 Original PDF

    BLC8G27LS Datasheets Context Search

    Catalog Datasheet
    Type
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    PDF

    Untitled

    Abstract: No abstract text available
    Text: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1.


    Original     		BLC8G27LS-160AV PDF

    BLC8G27LS-160AV

    Abstract: BLC8G27LS sot1275
    Text: BLC8G27LS-160AV Power LDMOS transistor Rev. 1 — 23 May 2013 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.


    Original     		BLC8G27LS-160AV BLC8G27LS-160AV BLC8G27LS sot1275 PDF

    BLF188XRS

    Abstract: BLF574XR,112
    Text: Updated: 26-Nov-13 RF Power Model Overview Type Number ADS Model ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLD6G22L-50 BLD6G22LS-50 BLF1043 BLF1046 BLF145 BLF147 BLF174XR


    Original     		26-Nov-13 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLF188XRS BLF574XR,112 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLC8G27LS-240AV Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.


    Original     		BLC8G27LS-240AV PDF

    Untitled

    Abstract: No abstract text available
    Text: BLC8G27LS-100AV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.


    Original     		BLC8G27LS-100AV PDF

    Untitled

    Abstract: No abstract text available
    Text: BLC8G27LS-180AV Power LDMOS transistor Rev. 1 — 1 July 2014 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.


    Original     		BLC8G27LS-180AV PDF

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF