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    BL53 Price and Stock

    Festo QBL-5-32T-U

    PUSH-IN L-CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QBL-5-32T-U Bulk 20 1
    • 1 $3.42
    • 10 $3.42
    • 100 $3.42
    • 1000 $3.42
    • 10000 $3.42
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    Diodes Incorporated SBL535

    DIODE SCHOTTKY 35V 5A TO220AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SBL535 Tube 50
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    • 100 $0.648
    • 1000 $0.648
    • 10000 $0.648
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    Diodes Incorporated SBL530

    DIODE SCHOTTKY 30V 5A TO220AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SBL530 Tube 50
    • 1 -
    • 10 -
    • 100 $0.648
    • 1000 $0.648
    • 10000 $0.648
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    Fischer Elektronik GmbH & Co KG BL-5-3

    for 0.635 mm and up to 0.85 mm
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    DigiKey BL-5-3 Bulk
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    Fischer Elektronik GmbH & Co KG BL-5-35

    for 0.635 mm and up to 0.85 mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BL-5-35 Bulk
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    BL53 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BL-530301-01-U Jewell Instruments Panel Meters, Industrial Controls, Meters, DPM 5V/200MV NEG RED BEZEL Original PDF
    BL530301-01U Modutec (WPI) Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Panel Meters Scan PDF
    BL-530302-01-U Jewell Instruments Panel Meters, Industrial Controls, Meters, DPM 5V/2V NEG RED BEZEL Original PDF
    BL530302-01U Modutec (WPI) Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Panel Meters Scan PDF

    BL53 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BL5373

    Abstract: RS5C372
    Text: 上海贝岭股份 上海贝岭股份有限公司 股份有限公司 BL5373 BL5373 用户手册 Shanghai Belling Co., Ltd. 低功耗实时时钟芯片 RTC 低功耗实时时钟芯片(RTC)BL5373 (RTC)BL5373 用 户 手 册 v 1. 0 ( 20102010-7-8) 上海贝岭股份有限公司


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    BL5373 BL5373 RS5C372 PDF

    Untitled

    Abstract: No abstract text available
    Text: BL5362 Low Power Real-Time Clock RTC SHANGHAI BELLING GENERAL DESCRIPTION FEATURES The BL5362 is a CMOS type real-time clock, which is connected to the CPU via two wires and capable of serial transmission of clock to the CPU. Since an oscillation circuit is driven


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    BL5362 BL5362 500nA PDF

    Two Digit bcd counter diagram

    Abstract: BL5372 BL5373
    Text: BL5373 Low Power Real-Time Clock RTC SHANGHAI BELLING GENERAL DESCRIPTION The BL5373 is a CMOS type real-time clock, which is connected to the CPU via two wires and capable of serial transmission of clock to the CPU. The BL5373 can generate various periodic interrupt clock pulses lasting for long


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    BL5373 400nA Two Digit bcd counter diagram BL5372 PDF

    BL5362

    Abstract: No abstract text available
    Text: 低功耗实时时钟芯片 RTC BL5362 低功耗实时时钟芯片(RTC)BL5362 低功耗实时时钟芯片(RTC)BL5362 1.概述 BL5362 是一款低功耗实时时钟电路,通过两线接口电路可以与 CPU 实时通信。主要用于一切需要提 供时基的系统中。BL5362 内部集成一低功耗的稳压电源,故能够使恶劣的环境条件下仍能保持振荡器正


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    BL5362 400nA 100KHz BL5362 PDF

    BL5372

    Abstract: 32.768khz 5ppm RS5C372A 32000K intrb
    Text: 低功耗实时时钟芯片 RTC BL5372 低功耗实时时钟芯片(RTC)BL5372 低功耗实时时钟芯片(RTC)BL5372 1.概述 2 BL5372 是一款低功耗实时时钟电路,通过 I C 两线接口电路可以与 CPU 实时通信,主要用于一切需


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    BL5372 400nA 32KHz 768KHz BL5372 32.768khz 5ppm RS5C372A 32000K intrb PDF

    BL5372

    Abstract: 32.768 khz crystal 5ppm AAH10 AM20 RS5C372A BH-10 BH20
    Text: 上海贝岭股份 上海贝岭股份有限公司 股份有限公司 BL5372 用户手册 Shanghai Belling Co., Ltd. 低功耗实时时钟芯片 RTC BL5372 低功耗实时时钟芯片(RTC)BL5372 用 户 手 册 v 1. 2 ( 20102010-5-18) 18) 上海贝岭股份有限公司


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    BL5372 400nA BL5372 32.768 khz crystal 5ppm AAH10 AM20 RS5C372A BH-10 BH20 PDF

    xgold 118

    Abstract: No abstract text available
    Text: Intel Atom Processor S1200 Product Family for Microserver Datasheet, Volume 1 of 2 December 2012 Document Number: 328194-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS


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    S1200 S1200 xgold 118 PDF

    induction cooker fault finding diagrams

    Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
    Text: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120


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    03front induction cooker fault finding diagrams enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer PDF

    intel PC MOTHERBOARD CIRCUIT diagram x86 family 6 model 7 stepping 3

    Abstract: MSI G41 MOTHERBOARD CIRCUIT diagram STR 6757 OF equivalent MSI G31 Motherboard g41 msi motherboard circuit diagram INTEL 845 MOTHERBOARD CIRCUIT diagram xeon e5 cpuid philips semiconductor data handbook JESD-A103 LGA-2011
    Text: Intel Xeon® Processor E5-1600/ E5-2600/E5-4600 Product Families Datasheet - Volume One May 2012 Reference Number: 326508, Revision: 002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS


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    E5-1600/ E5-2600/E5-4600 E5-1600/E5-2600/E5-4600 E5-2600 intel PC MOTHERBOARD CIRCUIT diagram x86 family 6 model 7 stepping 3 MSI G41 MOTHERBOARD CIRCUIT diagram STR 6757 OF equivalent MSI G31 Motherboard g41 msi motherboard circuit diagram INTEL 845 MOTHERBOARD CIRCUIT diagram xeon e5 cpuid philips semiconductor data handbook JESD-A103 LGA-2011 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    Untitled

    Abstract: No abstract text available
    Text: bL53131 005033S T 2SE D N AMER PHILIPS/DISCRETE P o w e rM O S tra n s is to r B U K 4 4 2-60 A B U K 442-60B T - G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    bL53131 005033S 442-60B BUK442 PDF

    1N821

    Abstract: N821 1N821A 1N825 N821A DIODE 1N825 1N827A 1N823 1N827 1N829
    Text: • bL53T31 002L.flfl5 Mb? H A PX N AMER PHILIPS/DISCRETE b^E 1N821 to 1N829 1N821A to 1N829A J> VOLTAGE REFERENCE DIODES Voltage reference diodes in a DO-34 envelope. They have a very low temperature coefficient and are primarily intended for use as voltage reference sources in measuring instruments such as digital


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    1N821 1N829 1N821A 1N829A DO-34 1N823; 1N825; 1N827; 1N829; DO-34 N821 1N825 N821A DIODE 1N825 1N827A 1N823 1N827 1N829 PDF

    IEC134

    Abstract: PTB42001X PTB42002X RTC4202X
    Text: N AMER PHILIPS/DISCRETE ObE D bL53T31 0015111 7 • PTB4200ÌX PTB42002X T ­ r - 3 3 -< ? 7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base c!ass-B power amplifiers up to 4 ,2 GHz. . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


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    bL53T31 PTB4200Ã PTB42002X 33-or PTB42001X PTB42002X IEC134 RTC4202X PDF

    Untitled

    Abstract: No abstract text available
    Text: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed


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    bL53T31 0025b57 BST86 0D35bbD BST86 PDF

    BST86

    Abstract: TRANSISTOR SMD 2X y TRANSISTOR SMD 2X K smd transistor marking TL transistor smd marking JT smd transistor marking u d
    Text: • bL53T31 D0SSb57 fl43 * A P X N AflER PHILIPS/DISCRETE BST86 b?E ]> N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in SO T89 envelope and designed fo r use as Surface M ounted Device SMD in th in and th ic k -film circ u its fo r a p p lica tio n w ith relay, high-speed


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    bL53T31 D0SSb57 BST86 0D25bba BST86 TRANSISTOR SMD 2X y TRANSISTOR SMD 2X K smd transistor marking TL transistor smd marking JT smd transistor marking u d PDF

    transistor 667

    Abstract: No abstract text available
    Text: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2


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    BFR93A BFT93. transistor 667 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 25E D • ^53= 131 00 20 7 0 0 7 BUK657-400A BUK657-400B PowerMOS transistor Fast Recovery Diode FET r - 37-/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


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    BUK657-400A BUK657-400B BUK657 -40QA -400/j bb53T31 PDF

    SBR545

    Abstract: No abstract text available
    Text: POWER LITEM?I SEMICONDUCTORS SBL5 SBR5 SERIES V O LT A G E RANGE _ 30 to 60 V olts 5 am p s, s c h o t t k y b a r r i e r r e c t i f i e r s C U R R EN T 5.0 Amperes TO-220 FEATURES • Plastic package has U /L • Flam m ability Classification 9 4 V 0 •


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    IL-S-19500 O-220 DSBL560 SBR545 PDF

    optocoupler a 3131

    Abstract: optocoupler 3131 optocoupler LP 250 3131 optocoupler MCT26 314 optocoupler L002 optocoupler 450 rfu20
    Text: J\_ MCT26 T O OPTOCOUPLER Optocoupler in a Dl L plastic envelope. The MCT26 comprises an infrared GaAs diode and a npn silicon phototransistor. UL — Covered under UL component recognition FILE E 90700 VDE — Approved according to VDE 0883/6.80 Reference voltage VDE 0110b Tab 4 : AC 380 V/DC 450 V - isolation group C


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    MCT26 MCT26 0110b 804/VDE 86/HD DD3S530 optocoupler a 3131 optocoupler 3131 optocoupler LP 250 3131 optocoupler 314 optocoupler L002 optocoupler 450 rfu20 PDF

    metal rectifier diode 40A

    Abstract: BYV18 BYV18-30 BYV18-35 BYV18-40A M0796
    Text: I I N AMER PHILIPS/DISCRETE □ bE D ^53=131 G011E43 4 BYV18 SERIES T-03-17 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence o f stored charge . They are intended for use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and


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    G011E43 BYV18 T-03-17 BYV18-40A, metal rectifier diode 40A BYV18-30 BYV18-35 BYV18-40A M0796 PDF

    ECG1278

    Abstract: Philips KS 40 Temperature Control 47MF 47UF A6006
    Text: PHILIPS E C G INC ECG 17E tbS3T2fi ODO4flb3 5 T-74-05-01 ECG1278 S e m ic o n d u c to rs 5.8 W Audio Power Amplifier Features — I.08h 27 MAX.- • • • • • Few external components Adjustable closed-loop gain Excellent overvoltage handling


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    T-74-05-01 ECG1278 Fig-10 VOLTA06 T-74-05-Ã ECG1278 Philips KS 40 Temperature Control 47MF 47UF A6006 PDF

    BUK627-400A

    Abstract: BUK627-400B ha 431 transistor transistor 431 N
    Text: N AMER P H I L I P S / D I S C R E T E BSE D • ^53=131 0020bS0 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.


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    BUK627-400A BUK627-400B BUK627 -400A -400B ha 431 transistor transistor 431 N PDF

    PBL302

    Abstract: kbp 3510 m5818 r 1504 C3510W
    Text: ALPHANUMERICAL INDEX PARTS NO. PAG E PARTS PAG E PARTS PAG E PARTS NO. NO. NO. NO. NO. N O. N O. 1N 4001 . . . . . . 150 . 128 E R 1007 . . . . . . 84 K BP 01G . . . . 1N 5401G . . . . . . . . 126 1 N 4 0 0 1 G L . . . . . 12 4 1N5402 . . . . . 158 A R 2 5 0 8 G . . . . . 136


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    5401G 5402G 1N5402 5403G 5404G 1N5405 5406G 5408G PBL302 kbp 3510 m5818 r 1504 C3510W PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Components Data sheet status Product specification date of Issue October 1990 2N7000 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FE A T U R E S . L o w R 0S on SYM BOL • Direct interface to C-M O S, TTL,


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    2N7000 MCB70J bS3T31 003b232 003b233 PDF