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    BL 39 933 Search Results

    BL 39 933 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BL39933 Facon Semiconductor Mouleded Bridge Scan PDF

    BL 39 933 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PA6-GF15

    Abstract: PA6-GF30 Nylon 6 GF30 EFA04 EXWHC-750 richco Silicone Rubber 35 Shore A EXWHC-500 EFCW-50A-RT SHR-15-6NB EFCWSF-40A-RT
    Text: ACCESSORIES EFA04 91 ASS Fiber Winding and Storage Reel 1 4.9 .6 73 Ø 2 1 7 3 8 Features • Fiber maintained on a 30mm radius • Stores up to 5000mm of 900 micron fiber • Also accepts ribbon fiber • Easy pull-out of fiber • Gentle winding motion by hand


    Original     		PDF EFA04 5000mm EFA04 ide3030 SRWD-3040 SRWD-4020 SRWD-4030 SRWD-4040 PA6-GF15 PA6-GF30 Nylon 6 GF30 EXWHC-750 richco Silicone Rubber 35 Shore A EXWHC-500 EFCW-50A-RT SHR-15-6NB EFCWSF-40A-RT

    MT42L32M32D2

    Abstract: micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32
    Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks


    Original     		PDF 512Mb MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 09005aef84d56533 MT42L32M32D2 micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32

    Untitled

    Abstract: No abstract text available
    Text: 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type


    Original     		PDF 512Mb MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 121-ball 134-ball 09005aef84d56533

    IS49RL18320

    Abstract: No abstract text available
    Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 IS49RL18320– 2 Meg x 18 x 16 Banks IS49RL36160– 1 Meg x 36 x 16 Banks Features • 1066 MHz DDR operation 2133 Mb/s/ball data rate • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency) • Organization


    Original     		PDF 576Mb: IS49RL18320­ IS49RL36160­ 168-ball -107E, IS49RL18320

    IS49RL18320

    Abstract: No abstract text available
    Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 IS49RL18320– 2 Meg x 18 x 16 Banks IS49RL36160– 1 Meg x 36 x 16 Banks Features • 1066 MHz DDR operation 2133 Mb/s/ball data rate • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency) • Organization


    Original     		PDF 576Mb: IS49RL18320â IS49RL36160â 64mserrors -107E, IS49RL18320

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package


    Original     		PDF 512Mb MT42L32M16D1, MT42L32M32D2 121-ball 134-ball 09005aef84d56533

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package


    Original     		PDF 512Mb MT42L32M16D1, MT42L32M32D2 121-ball 134-ball 09005aef84d56533

    MT42L16M32

    Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
    Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package


    Original     		PDF 512Mb: MT42L32M16D1, MT42L16M32D1 09005aef8467caf2 MT42L16M32 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2

    MT42L16M32D1

    Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
    Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package


    Original     		PDF 512Mb: MT42L32M16D1, MT42L16M32D1 09005aef8467caf2 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball

    LPDDR2-1066

    Abstract: micron lpddr2 lpddr2 DQ calibration LPDDR2 SDRAM micron MT42L128M64D4 lpddr2 MT42L64M64D2 micron LPDDR2 X32 LPDDR2 SDRAM mt42L128M64D
    Text: 2Gb: x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L64M64D2, MT42L128M64D4, MT42L96M64D3 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 32 x 8 banks x 2 die – 8 Meg x 32 x 8 banks x 3 die – 8 Meg x 32 x 8 banks x 4 die


    Original     		PDF MT42L64M64D2, MT42L128M64D4, MT42L96M64D3 240-ball 09005aef84645b7c LPDDR2-1066 micron lpddr2 lpddr2 DQ calibration LPDDR2 SDRAM micron MT42L128M64D4 lpddr2 MT42L64M64D2 micron LPDDR2 X32 LPDDR2 SDRAM mt42L128M64D

    RLDRAM3

    Abstract: IS49RL18320 168-FBGA RLDRAM
    Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 IS49RL18320 – 2 Meg x 18 x 16 Banks IS49RL36160 – 1 Meg x 36 x 16 Banks Features • 1066 MHz DDR operation 2133 Mb/s/ball data rate • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency) • Organization


    Original     		PDF 576Mb: IS49RL18320 IS49RL36160 -107E, RLDRAM3 IS49RL18320 168-FBGA RLDRAM

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm


    Original     		PDF 512Mb: MT42L32M16D1 09005aef8467caf2

    K4B8G0846B-MC

    Abstract: K4BAG0446B K4BAG0446B-EC DDR3-1866 samsung
    Text: Rev. 1.3,Nov. 2011 M392B1G70BH0 M392B1G73BH0 M392B2G70BM0 M392B2G73BM0 M392B4G70BE0 240pin VLP Registered DIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND


    Original     		PDF M392B1G70BH0 M392B1G73BH0 M392B2G70BM0 M392B2G73BM0 M392B4G70BE0 240pin 78FBGA K4B8G0846B-MC K4BAG0446B K4BAG0446B-EC DDR3-1866 samsung

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.3,Nov. 2011 M392B1G70BH0 M392B1G73BH0 M392B2G70BM0 M392B2G73BM0 M392B4G70BE0 240pin VLP Registered DIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND


    Original     		PDF M392B1G70BH0 M392B1G73BH0 M392B2G70BM0 M392B2G73BM0 M392B4G70BE0 240pin 78FBGA otherAG0446B-EC*

    LT 6227

    Abstract: No abstract text available
    Text: Data sheet OMNIMATE Signal - series BL/SL 5.08 SL 5.08HC/02/90G 3.2SN BK BX Weidmüller Interface GmbH & Co. KG Klingenbergstraße 16 D-32758 Detmold Germany Fon: +49 5231 14-0 Fax: +49 5231 14-292083 www.weidmueller.com Male headers made from glass fibre-reinforced plastic


    Original     		PDF 08HC/02/90G D-32758 LT 6227

    216-ball

    Abstract: Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MT42L128M64D4 MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


    Original     		PDF MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb 216-ball Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32

    mt42l128M32

    Abstract: mt42l256m32 MT42L64M32D1 LPDDR2-1066 MT42L256M32D4 MT42L128M32D MT42L128M16D1 MT42L128M64D4 MT42L256M32D MT42L128M32D2
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


    Original     		PDF MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb mt42l128M32 mt42l256m32 MT42L64M32D1 LPDDR2-1066 MT42L256M32D4 MT42L128M32D MT42L128M16D1 MT42L256M32D MT42L128M32D2

    MT42L64M64D2

    Abstract: mt42l128M32 LPDDR2-1066 64M32 MT42L128M64D4 MT42L MT42L256M32D4 MT42L64M32D1 LPDDR2 SDRAM micron micron lpddr2
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


    Original     		PDF MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb MT42L64M64D2 mt42l128M32 LPDDR2-1066 64M32 MT42L MT42L256M32D4 MT42L64M32D1 LPDDR2 SDRAM micron micron lpddr2

    lpddr2 DQ calibration

    Abstract: micron lpddr2 lpddr2-s4 ADQ28 MT42L128M16D1 LPDDR2 SDRAM micron MT42L64M32D1 MT42L128M32D2 mt42l256m32 LPDDR2 1Gb Memory
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


    Original     		PDF MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb lpddr2 DQ calibration micron lpddr2 lpddr2-s4 ADQ28 MT42L128M16D1 LPDDR2 SDRAM micron MT42L64M32D1 MT42L128M32D2 mt42l256m32 LPDDR2 1Gb Memory

    K4B2G1646C

    Abstract: k4B2G1646 128mx16 ddr3 K4B2G0846C-HCH9 K4B2G0846C-HCK0 samsung ddr3 "2Gb DDR3 SDRAM" DDR3 DIMM 240 pinout HCF8 K4B2G0446C
    Text: 2Gb DDR3 SDRAM K4B2G04 08 46C 2Gb C-die DDR3 SDRAM Specification 78 FBGA with Lead-Free & Halogen-Free (RoHS Compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4B2G04 K4B2G1646C k4B2G1646 128mx16 ddr3 K4B2G0846C-HCH9 K4B2G0846C-HCK0 samsung ddr3 "2Gb DDR3 SDRAM" DDR3 DIMM 240 pinout HCF8 K4B2G0446C

    DDR3-1866 RDIMM SPD JEDEC

    Abstract: No abstract text available
    Text: Rev. 1.1, Jul. 2011 M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin VLP Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin 78FBGA 256Mbx4 256Mx72 K4B1G0446G-BC* DDR3-1866 RDIMM SPD JEDEC

    M393B1K70QB0-CK0

    Abstract: No abstract text available
    Text: Rev.1.1, Aug. 2013 M393B1K70QB0 240pin Registered DIMM based on 2Gb Q-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF M393B1K70QB0 240pin 78FBGA 512Mbx4 1Gx72 K4B2G0446Q-BC* M393B1K70QB0-CK0

    Facon BH 37 933

    Abstract: facon bh 39933 BD 37 931 s Facon Bb 37 933 facon bh 37 741 BH 37 933 facon bd 39933 bb 36 931 bj 39933 BB36931
    Text: FACON 4SE T> m 3MSbED3 ODDOGOb T B iF C N 2 3 -O FACON SEMICONDUCTEURS/SEMECONDUCTORS single phase moulded bridges 0,8 Amp to 1,5 Amp ponts m on op h asés m oulés 0,8 Amp à 1,5 Amp V RRM Typos <V V RMS rec o m ­ m ended m ax >d on re ­ s is tiv e lo a d


    OCR Scan     		PDF 3M5b203 FBD08 CB-198 CB-237 CB-200 Facon BH 37 933 facon bh 39933 BD 37 931 s Facon Bb 37 933 facon bh 37 741 BH 37 933 facon bd 39933 bb 36 931 bj 39933 BB36931

    facon bf 39933

    Abstract: facon BA 204 115 Facon Bb 37 933 facon bh 39933 BD 39-931 Facon BH 37 933 bd 39933 FBH15 facon bd 39933 Facon bh 36931
    Text: FACON 4SE D • 3M5b203 □□□□□Ob S FACON SEMICONDUCTEURS/SEMtCONDUCTORS ■ FCN ~T~2 3 ' 0 { single phase moulded bridges 0,8 Amp to 1,5 Amp ponts monophasés moulés 0,8 Amp à 1,5 Amp V RRM Typ es V r MS recom ­ mended max id on re­ sistive load


    OCR Scan     		PDF 3M5b203 FBD08 FBH08 CB-198 CB-237 facon bf 39933 facon BA 204 115 Facon Bb 37 933 facon bh 39933 BD 39-931 Facon BH 37 933 bd 39933 FBH15 facon bd 39933 Facon bh 36931