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    BJT SAFE OPERATING AREA Search Results

    BJT SAFE OPERATING AREA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    CS-SASDDP8282-000.5 Amphenol Cables on Demand Amphenol CS-SASDDP8282-000.5 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 0.5m Datasheet
    CS-SASDDP8282-001 Amphenol Cables on Demand Amphenol CS-SASDDP8282-001 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 1m Datasheet
    LM143H/883 Rochester Electronics LLC Operational Amplifier, 1 Func, 6000uV Offset-Max, BIPolar, MBCY8, METAL CAN, BCY-8 Visit Rochester Electronics LLC Buy
    LM759MH Rochester Electronics LLC Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, MBCY8, METAL, CAN-8 Visit Rochester Electronics LLC Buy

    BJT SAFE OPERATING AREA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		PDF GA03JT12-247 O-247AB GA03JT12 01E-49 00E-27 37E-10 97E-10 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		PDF GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2

    HCPL-322J

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		PDF GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3 HCPL-322J

    IXAN0063

    Abstract: IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS
    Text: Insulated Gate Bipolar Transistor IGBT Basics Abdus Sattar, IXYS Corporation IXAN0063 1 This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs.


    Original     		PDF IXAN0063 2001Indonesia IXAN0063 IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2

    Untitled

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3

    Untitled

    Abstract: No abstract text available
    Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA03JT12-247 O-247AB GA03JT12 01E-49 00E-27 37E-10 97E-10 00E-3

    ACPL-322J

    Abstract: MIC4452YN
    Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA04JT17-247 O-247AB GA04JT17 22E-47 91E-27 37E-10 36E-10 00E-3 ACPL-322J MIC4452YN

    IGBT DIVER IC

    Abstract: No abstract text available
    Text: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA16JT17-247 O-247AB GA16JT17 03E-47 719E-28 68E-10 72E-09 00E-03 IGBT DIVER IC

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt
    Text: BJT Primary Switch Ratings In RDFC Applications Application Note AN-2337 When the transistor is off and a high collector voltage is applied, the electric field between base and collector causes depletion of this N- region and turns it into an insulator. The voltage


    Original     		PDF AN-2337 DS-1423) AN-2497) AN-2337-0904 07-Apr-2009 "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt

    IXAN0061

    Abstract: Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics
    Text: IXAN0061 Power MOSFET Basics Abdus Sattar, IXYS Corporation Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors BJTs and


    Original     		PDF IXAN0061 AN10273 IXAN0061 Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics

    C2172

    Abstract: No abstract text available
    Text: C2172 Design Guide C2172 Design Guide DG-5349-1409 15-Sep-2014 Cambridge Semiconductor Ltd 2012 Page 1 Confidential DG-5349-1409 15-Sep-2014 C2172 Design Guide Contents 1 INTRODUCTION .4


    Original     		PDF C2172 DG-5349-1409 15-Sep-2014 C2172

    KRT 30

    Abstract: M107
    Text: 1-Pack BJT FUJI 1 D I 400A-120 M U M Ë ïïr a iÊ y< 7 - 1200 V 400 A -;u : Outline Drawings POWER TRANSISTOR MODULE 22 50 22 ! Features • ¡SIÎEE High Voltage # 7 tj — ij Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type


    OCR Scan     		PDF 00A///s KRT 30 M107

    FUJI 1DI 300

    Abstract: 1DI 150 power transistor bjt 1000 a M106 power BJT 60A VEBo-10V fuji 1di fuji 1 pack bjt
    Text: _ _ - _ 1-Pack BJT I D I 3 Z - 1 • » * ! Outline Drawings 7 - | a « 13^ 21 29 8 8 16 nr POWER TRANSISTOR MODULE : Features • ¡S ii/± High Voltage • y ij — «J ;j- KrtîSc Including Free Wheeling Diode • ASO ^ S i ' Excellent Safe Operating Area


    OCR Scan     		PDF 300Z-100 -300A FUJI 1DI 300 1DI 150 power transistor bjt 1000 a M106 power BJT 60A VEBo-10V fuji 1di fuji 1 pack bjt

    200D-100

    Abstract: 200D100 IEBo-400mA two transistors power transistor bjt 1000 a 1000v Transistor bjt fuji bjt vebo10v
    Text: _ _ - _ 2-Pack BJT 2DI200D-100 '» A * I Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • High Voltage t 7 ' J “ 7h>f U > *f ¥ 4 KrtJSt Including Free Wheeling Diode • ASO Excellent Safe Operating Area • Insulated Type I A p p licatio n s


    OCR Scan     		PDF 200D-100 E82988 C-200A 200D-100 200D100 IEBo-400mA two transistors power transistor bjt 1000 a 1000v Transistor bjt fuji bjt vebo10v

    diode 060

    Abstract: power transistor bjt 1000 a 1150Z-100 M210 power BJT 150A bs245
    Text: 2 -Pack BJT 1000 V 150 a 2DI150Z-100 Ä I-/I • V JK J * ! Outline Drawings / < 7 - h :7 > i > X 9 * ' ? n . - U POWER TRANSISTOR MODULE Features • S H E : High Voltage t7 U — ¥<4 # ASO If f eX' • KrtMc including Free Wheeling Diode Excellent Safe Operating Area


    OCR Scan     		PDF 1150Z-100 150At 50A///S diode 060 power transistor bjt 1000 a 1150Z-100 M210 power BJT 150A bs245

    1B04 transistor

    Abstract: power transistor bjt 1000 a 1B04 1B04 transistors 130Z-100 30AF 30A two transistors 100equivalent transistor equivalent
    Text: 2-Pack BJT 1000 V ,030" Av 2DI30Z-100 / I l/U ä l i Outline Drawings POWER TRANSISTOR MODULE F e a tu re s • ftWBE • 7y — High Voltage U >$¥<4 =fr — KrtSS • ASO Including Free Wheeling Diode Excellent Safe Operating Area • W&M insulated Type


    OCR Scan     		PDF 130Z-100 100equivalent) E82988 1B04 transistor power transistor bjt 1000 a 1B04 1B04 transistors 130Z-100 30AF 30A two transistors 100equivalent transistor equivalent

    fuji 2di

    Abstract: 1000v Transistor bjt power transistor bjt 1000 a Collmer Semiconductor 2DI 75Z-100 bl25
    Text: 2-Pack BJT 1000 V 75 A A t / 1 75Z-100 # I i/i/ EMfp^nK 2DI , < 7 - POWER TRANSISTOR MODULE : F ea tures • ¡SWfiE High Voftage • 7 U — f r ' i y > 5 *9 *4 • ASO M £ i ' • K rtft Inciuding Free Wheeling Diode Excellent Safe Operating Area Insulated Type


    OCR Scan     		PDF 75Z-100 E82988 Tj-125Â fuji 2di 1000v Transistor bjt power transistor bjt 1000 a Collmer Semiconductor 2DI 75Z-100 bl25

    bjt 100a

    Abstract: 2D11002-100 power BJT 100A power transistor bjt 1000 a TRANSISTOR 0156 Transistor BJT 100A S1m diode ifrd W-J M6 M210
    Text: Ä ID- / I1 2 2-Pack BJT 1000 V 100 a 0 2^ - ' V 1 0W0 V0 W 1 I Outline Drawings POWER TRANSISTOR MODULE i Features • i6 IiJ ± High Voltage # 7 ' J —sfc'f U > 9 ¥ A =t — KF*9/8 • ASO tf'jAi' Including Free Wheeling Diode Excellent Safe Operating Area


    OCR Scan     		PDF 2D11002-100 E82988 Ic-100A, 00A/jws bjt 100a 2D11002-100 power BJT 100A power transistor bjt 1000 a TRANSISTOR 0156 Transistor BJT 100A S1m diode ifrd W-J M6 M210

    fuji 2di 30Z-120

    Abstract: 30Z-120 fuji 2di BJT 1200V fuji bjt JA BJT Collmer Semiconductor 2DI VEBo-10V
    Text: 2-Pack BJT 1200 V 30A 2DI30Z-120 Ä I-/I J l / L ” U U /< 7 - ThîS ; Outline Drawings POWER TRANSISTOR MODULE •*NM! : Features • SSSÎŒ High Voltage i y ' f ' f ' i * - K r tiB E • ASO M £ i.' • t&tkfë Including Freewheeling Diode Excellent Safe Operating Area


    OCR Scan     		PDF 30Z-120 E82988 fuji 2di 30Z-120 30Z-120 fuji 2di BJT 1200V fuji bjt JA BJT Collmer Semiconductor 2DI VEBo-10V

    transistor 131-6

    Abstract: JET 4A M106 TRANSISTOR 300Z-120 M106 DIODE 03 BJT safe operating area dc motor 7 kg-cm
    Text: FUJI [l'iUM ËïrDSOË 1 D 3 I l- ; - Z 1 2 1-Pack BJT 1200 V 300 A I Outline Drawings u POWER TRANSISTOR MODULE • & f t : Features • ¡SM JÏ High Voltage U ¥4 = t“ KF*9/8c Including Free Wheeling Diode • ASO ^ 7 £ i n Excellent Safe Operating Area


    OCR Scan     		PDF 300Z-120 E82988 Tj-125Â transistor 131-6 JET 4A M106 TRANSISTOR 300Z-120 M106 DIODE 03 BJT safe operating area dc motor 7 kg-cm

    fuji 2DI 50Z-120

    Abstract: cf rh transistor fuji 2di Collmer Semiconductor 2DI Vceo-1200V
    Text: 20/ 50Z-120 FU JI ET030E 2-Pack BJT 1200 V 50 A ✓ < 7 — POW ER TR A N S ISTO R M O D ULE ' Features • iS it/± • 7 U— High Voltage lJ — Krt/R Including Free Wheeling Diode • ASO i ? & \ s Excellent Safe Operating Area • t&W iM Insulated Type


    OCR Scan     		PDF 50Z-120 E82988 fuji 2DI 50Z-120 cf rh transistor fuji 2di Collmer Semiconductor 2DI Vceo-1200V

    M106 TRANSISTOR

    Abstract: M106 40kg-cm
    Text: 1-Pack BJT 1200 V 200 A F U JI SO M STG SDe 1 D 2 I - Z 1 2 ! Outline Drawings POWER TRANSISTOR MODULE 13 Features Pm *3»8 • i i iHL High Voltage • U • ASO £*/£*.' • ax — KrtJK 21 including Free Wheeling Diode 29 ? È ^ \T B Excellent Safe Operating Area


    OCR Scan     		PDF 200Z-120 E82988 Tj-125Â M106 TRANSISTOR M106 40kg-cm

    fuji 2di

    Abstract: Collmer Semiconductor 2DI 50z-100 Collmer Semiconductor 2DI bjt 50a power transistor bjt 1000 a 50Z-100 50Z100
    Text: 2-Pack BJT 1000 V 50 a 2DI Ä I - / I 50Z-100 I \ß \ß Outline Drawings s \ r7 — \ = 7 y j > 7 s ^ ^ : i > = L - V POWER TRANSISTOR MODULE • I t ë : Features • ¡SAME High Voltage • 7 l) — U KF*3/8c • ASO including Free W heeling Diode Excellent Safe Operating Area


    OCR Scan     		PDF 50Z-100 E82988 fuji 2di Collmer Semiconductor 2DI 50z-100 Collmer Semiconductor 2DI bjt 50a power transistor bjt 1000 a 50Z-100 50Z100