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    BIP. POWER TRANS Search Results

    BIP. POWER TRANS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    BIP. POWER TRANS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N79

    Abstract: No abstract text available
    Text: 3N79 Si NPN Lo-Pwr BJT 33.00 Transistors Transistors Bipolar Si NPN Low-Power Bip. Page 1 of 1 Enter Your Part # Home Part Number: 3N79 Online Store 3N79 Diodes Si NPN Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    PDF com/3n79 3N79

    2N716

    Abstract: No abstract text available
    Text: 2N716 Si NPN Lo-Pwr BJT 3.31 Transistors Transistors Bipolar Si NPN Low-Power Bip. Page 1 of 1 Enter Your Part # Home Part Number: 2N716 Online Store 2N716 Diodes Si NPN Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    PDF 2N716 2N716 com/2n716

    Untitled

    Abstract: No abstract text available
    Text: 2N4912 POWER TRANSISTORS 1A - 80V - 25W 1.51 Transistors Bip. 1 of 1 Home Part Number: 2N4912 Online Store 2N4912 Diodes PO WER TRANSISTO RS( 1 A - 8 0 V - 2 5 W) Transistors Enter code INTER3 at checkout.*


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    PDF 2N4912 com/2n4912 2N4912

    Power IC

    Abstract: No abstract text available
    Text: Custom IC • Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips. ■ Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available. ■ Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic


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    PDF MT-100 FM205 10pin SMA12pin SMA15pin SLA12pin SLA15pin SLA18pin SMD16pin SPF16pin Power IC

    Power IC

    Abstract: No abstract text available
    Text: Custom IC • Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips. ■ Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available. ■ Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic


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    PDF FM205 10pin SMA12pin SMA15pin SLA12pin SLA15pin SLA18pin SMD16pin SPF16pin SPF20pin Power IC

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    stm cl-30

    Abstract: TCA 700 v atm header error checking ATM timing diagram BIP-8 TCA 700 optical input to rca output circuit PFE 210 Aps 92 CY7C955
    Text: 1CY 7C95 5 PRELIMINARY CY7C955 AX ATM-SONET/SDH Transceiver Features — Line Far End Receive Failure • WAN and LAN ATM physical layer device • Provides complete physical layer transport of ATM cells at — STS−3c/ STM−1 rate of 155.52 MHz — STS−1 rate of 51.84M Hz


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    PDF CY7C955 stm cl-30 TCA 700 v atm header error checking ATM timing diagram BIP-8 TCA 700 optical input to rca output circuit PFE 210 Aps 92 CY7C955

    CY7C955

    Abstract: No abstract text available
    Text: CY7C955 PRELIMINARY AX ATM-SONET/SDH Transceiver — Line Far End Receive Failure Features • WAN and LAN ATM physical layer device • Provides complete physical layer transport of ATM cells at — STS−3c/ STM−1 rate of 155.52 MHz — STS−1 rate of 51.84M Hz


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    PDF CY7C955 CY7C955

    Battery charger 48 volt circuit diagram

    Abstract: SC801IMLTR SC801IMLTRT SC801 schematic diagram 12V battery charger regulator CON16AP MLP16 SC801EVB SD05 SD12
    Text: SC801 Fully Integrated High Current Lithium-Ion Battery Charger System POWER MANAGEMENT Description Features ‹ Fully integrated charger with FET pass transistor, The SC801 is a fully integrated, single cell, constant-current/constant-voltage Lithium-Ion\Li-Polymer battery


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    PDF SC801 MLP-16 Battery charger 48 volt circuit diagram SC801IMLTR SC801IMLTRT SC801 schematic diagram 12V battery charger regulator CON16AP MLP16 SC801EVB SD05 SD12

    SC8011

    Abstract: No abstract text available
    Text: SC801 Fully Integrated High Current Lithium-Ion Battery Charger System POWER MANAGEMENT Description Features ‹ Fully integrated charger with FET pass transistor, The SC801 is a fully integrated, single cell, constant-current/constant-voltage Lithium-Ion battery charger management system. The SC801 has built in intelligence and


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    PDF SC801 125mA SC801 MLP-16 SC8011

    CY7C955

    Abstract: ATP-3 hecs 50
    Text: CY7C955 PRELIMINARY AX ATM-SONET/SDH Transceiver — Line Far End Receive Failure Features • WAN and LAN ATM physical layer device • Provides complete physical layer transport of ATM cells at: — STS−3c/ STM−1 rate of 155.52 MHz — STS−1 rate of 51.84 MHz


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    PDF CY7C955 CY7C955 ATP-3 hecs 50

    con16a

    Abstract: CON16AP cv200
    Text: SC801 Fully Integrated High Current Lithium-Ion Battery Charger System POWER MANAGEMENT Description Features ! Fully integrated charger with FET pass transistor, The SC801 is a fully integrated, single cell, constant-current/constant-voltage Lithium-Ion\Li-Polymer battery


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    PDF SC801 125mA SC801 MLP-16 con16a CON16AP cv200

    MLP16

    Abstract: SC803 SD05 SD12 schematic diagram 12v battery charger SC803IMLTRT
    Text: SC803 Fully Integrated High Current Lithium-Ion Battery Charger System POWER MANAGEMENT Description Features ! Fully integrated charger with FET pass transistor, The SC803 is a fully integrated, single cell, constant-current constant-voltage Lithium-Ion battery charger management system. The SC803 has built in intelligence and


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    PDF SC803 SC803 125mA MLP-16 MLP16 SD05 SD12 schematic diagram 12v battery charger SC803IMLTRT

    MLP16

    Abstract: SC801 SC801EVB SC801IMLTR SC801IMLTRT SD05 SD12
    Text: 5+& Fully Integrated High Current Lithium-Ion Battery Charger System POWER MANAGEMENT Description Features K Fully integrated charger with FET pass transistor, The SC801 is a fully integrated, single cell, constant-current/constant-voltage Lithium-Ion\Li-Polymer battery


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    PDF SC801 125mA MLP-16 MLP16 SC801EVB SC801IMLTR SC801IMLTRT SD05 SD12

    CON16AP

    Abstract: MLP16 SC803 SC803IMLTR SD05 SD12
    Text: 5+&! Fully Integrated High Current Lithium-Ion Battery Charger System POWER MANAGEMENT Description Features K Fully integrated charger with FET pass transistor, The SC803 is a fully integrated, single cell, constant-current constant-voltage Lithium-Ion battery charger management system. The SC803 has built in intelligence and


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    PDF SC803 125mA MLP-16 CON16AP MLP16 SC803IMLTR SD05 SD12

    hecs 50

    Abstract: CY7C955
    Text: 55 CY7C955 PRELIMINARY AX ATM-SONET/SDH Transceiver Features — Line Far End Receive Failure • WAN and LAN ATM physical layer device • Provides complete physical layer transport of ATM cells at: — STS−3c/ STM−1 rate of 155.52 MHz — STS−1 rate of 51.84 MHz


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    PDF CY7C955 CY7C955 hecs 50

    CON16A

    Abstract: No abstract text available
    Text: SC803 Fully Integrated High Current Lithium-Ion Battery Charger System POWER MANAGEMENT Description Features ‹ Fully integrated charger with FET pass transistor, The SC803 is a fully integrated, single cell, constant-current constant-voltage Lithium-Ion battery charger management system. The SC803 has built in intelligence and


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    PDF SC803 125mA CON16A

    CON16AP

    Abstract: CON16A MLP16 SC803 SD05 SD12
    Text: SC803 Fully Integrated High Current Lithium-Ion Battery Charger System POWER MANAGEMENT Description Features ‹ Fully integrated charger with FET pass transistor, The SC803 is a fully integrated, single cell, constant-current constant-voltage Lithium-Ion battery charger management system. The SC803 has built in intelligence and


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    PDF SC803 MLP-16 CON16AP CON16A MLP16 SC803 SD05 SD12

    2SC801

    Abstract: No abstract text available
    Text: SC801 Fully Integrated High Current Lithium-Ion Battery Charger System POWER MANAGEMENT Description Features ‹ Fully integrated charger with FET pass transistor, The SC801 is a fully integrated, single cell, constant-current/constant-voltage Lithium-Ion\Li-Polymer battery


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    PDF SC801 125mA 2SC801

    MLP16

    Abstract: SC801 SC801IMLTR SD05 SD12 mlp-16 Esd filter
    Text: SC801 Fully Integrated High Current Lithium-Ion Battery Charger System POWER MANAGEMENT Description Features K Fully integrated charger with FET pass transistor, The SC801 is a fully integrated, single cell, constant-current/constant-voltage Lithium-Ion battery charger management system. The SC801 has built in intelligence and


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    PDF SC801 SC801 125mA MLP-16 MLP16 SC801IMLTR SD05 SD12 mlp-16 Esd filter

    OPA657 transimpedance amplifier

    Abstract: SBOA122 Photodiode Amplifiers - Op Amp Solutions 10MHz-other OPA656 OPA657 OPA842 OPA843 a2nv OPA847
    Text: Application Report SBOA122 – November 2009 Transimpedance Considerations for High-Speed Amplifiers Xavier Ramus . High-Speed Products ABSTRACT Designing high-resolution detection circuits using photodiodes presents considerable challenges because


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    PDF SBOA122 OPA657 transimpedance amplifier SBOA122 Photodiode Amplifiers - Op Amp Solutions 10MHz-other OPA656 OPA657 OPA842 OPA843 a2nv OPA847

    CA3030

    Abstract: marking 1AJ MOSFET marking KE CPH3304 CPH6102 AB mosfet marking jb pcp sanyo CG CPH3404 CPH6302 CPH6202
    Text: SANYO New Products of CPH3/6 Package Series 1 Power M O S F E T s and Bip Transistors How to name C P H 3/5/6 package products ♦ M o u n t height o f 0.9mm and best suited for small and thin portable equipment ♦A llo w a b le power dissipation o f 1.6W.


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    PDF 900mrrf CPH600UGA) CPH6002 T17D7b MT990408TR CA3030 marking 1AJ MOSFET marking KE CPH3304 CPH6102 AB mosfet marking jb pcp sanyo CG CPH3404 CPH6302 CPH6202

    Untitled

    Abstract: No abstract text available
    Text: m TA78L05F ~ TA78L15F o 5V, 9V, Bip°LaBLINE*R 12V, 15V, Unit in mm 3- TERMINAL POSITIVE VOLTAGE REGULATORS • Best suited to power supply for TTL/C2 MOS. 4.R MAX. 1.6 MAX. • No external part needed. I \ • Built-in thermal protective circuit. • Max. output current 150mA.


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    PDF TA78L05F TA78L15F 150mA.

    cny62

    Abstract: tda1060 tda1060 power diagram TDA1060A mullard zener 7 pin dil smps power control ic PWM TDA1060 SMPS 666 TDA 1060 f TDA1060B
    Text: TDA1060 TDA1060A TDA1060B CONTROL CIRCUIT FOR SWITCHED-MODE POWER SUPPLY G E N E R A L D E SC R IP TIO N The T D A 1 0 6 0 is a bip o la r integrated c irc u it intended fo r the c o n tro l o f a sw itched-m ode pow er supply. It incorporates all the c o n tro l fu n c tio n s lik e ly to be required in sw itched-m ode pow er supplies fo r


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    PDF TDA1060 TDA1060A TDA1060B TDA1060 16-LEAD OT-74) cny62 tda1060 power diagram TDA1060A mullard zener 7 pin dil smps power control ic PWM TDA1060 SMPS 666 TDA 1060 f TDA1060B