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    BI-DIRECTIONAL P-CHANNEL MOSFET Search Results

    BI-DIRECTIONAL P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BI-DIRECTIONAL P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3831DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Power Switch FEATURES PRODUCT SUMMARY VDS V ±7 RDS(on) (Ω) ID (A) 0.170 at VGS = - 4.5 V ± 2.4 0.240 at VGS = - 2.5 V ± 2.0 DESCRIPTION The Si3831DV is a low on-resistance p-channel power MOSFET providing bi-directional blocking and conduction.


    Original     		Si3831DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si3831

    Abstract: Si3831DV Bi-Directional P-Channel mosfet
    Text: Si3831DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Power Switch FEATURES PRODUCT SUMMARY VDS V ±7 RDS(on) (Ω) ID (A) 0.170 at VGS = - 4.5 V ± 2.4 0.240 at VGS = - 2.5 V ± 2.0 DESCRIPTION The Si3831DV is a low on-resistance p-channel power MOSFET providing bi-directional blocking and conduction.


    Original     		Si3831DV 18-Jul-08 si3831 Bi-Directional P-Channel mosfet PDF

    Si3831DV

    Abstract: Bi-Directional P-Channel mosfet
    Text: Si3831DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Power Switch FEATURES PRODUCT SUMMARY VDS V ±7 RDS(on) (Ω) ID (A) 0.170 at VGS = - 4.5 V ± 2.4 0.240 at VGS = - 2.5 V ± 2.0 DESCRIPTION The Si3831DV is a low on-resistance p-channel power MOSFET providing bi-directional blocking and conduction.


    Original     		Si3831DV 11-Mar-11 Bi-Directional P-Channel mosfet PDF

    72915

    Abstract: Si6901DQ tr230
    Text: SPICE Device Model Si6901DQ Vishay Siliconix Bi-Directional P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si6901DQ 23-May-04 72915 tr230 PDF

    Bi-Directional P-Channel mosfet

    Abstract: SI8901 Si8901EDB
    Text: SPICE Device Model Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si8901EDB 18-Jul-08 Bi-Directional P-Channel mosfet SI8901 PDF

    SI8901

    Abstract: Si8901EDB
    Text: SPICE Device Model Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si8901EDB S-60073Rev. 23-Jan-06 SI8901 PDF

    Bi-Directional P-Channel

    Abstract: SI8901 Si8901EDB Bi-Directional P-Channel mosfet
    Text: SPICE Device Model Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si8901EDB 19-Apr-04 Bi-Directional P-Channel SI8901 Bi-Directional P-Channel mosfet PDF

    Bi-Directional P-Channel mosfet

    Abstract: Si3801DV mosfet 23 Tsop-6
    Text: Si3801DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Battery Switch PRODUCT SUMMARY VSS V –12 rSS(on) (W) IS (A) 0.220 @ VGS = –4.5 V "2.3 0.400 @ VGS = –2.5 V "1.7 FEATURES D Solution for High-Side Battery Disconnect Switching (BDS) D Supports Multiple Battery Applications


    Original     		Si3801DV S-59628--Rev. 09-Nov-98 Bi-Directional P-Channel mosfet mosfet 23 Tsop-6 PDF

    SI8901

    Abstract: J-STD-020A Si8901EDB
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET


    Original     		Si8901EDB 8901E S-50066--Rev. 17-Jan-05 SI8901 J-STD-020A PDF

    top 8901

    Abstract: SI8901 J-STD-020A
    Text: Si8901DB New Product Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area PRODUCT SUMMARY


    Original     		Si8901DB Si8901DB-T2--E3 18-Jul-08 top 8901 SI8901 J-STD-020A PDF

    40871

    Abstract: Si6901DQ
    Text: Si6901DQ New Product Vishay Siliconix Bi-Directional P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) −12 rS1S2(on) (Ω) IS1S2 (A) 0.031 @ VGS = −4.5 V −5.4 0.040 @ VGS = −2.5 V −4.8 0.056 @ VGS = −1.8 V −3.5 D TrenchFETr Power MOSFET


    Original     		Si6901DQ Si6901DQ-T1--E3 S-40871--Rev. 03-May-04 40871 PDF

    SI8901EDB

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET


    Original     		Si8901EDB 8901E 8901E Si8901EDB-T2Note 63Sn/37Pb S-40852--Rev. 03-May-04 PDF

    Bi-Directional P-Channel mosfet

    Abstract: Si3801DV
    Text: Si3801DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Battery Switch PRODUCT SUMMARY VSS V –12 rSS(on) (W) IS (A) 0.220 @ VGS = –4.5 V "2.3 0.400 @ VGS = –2.5 V "1.7 FEATURES D Solution for High-Side Battery Disconnect Switching (BDS) D Supports Multiple Battery Applications


    Original     		Si3801DV 18-Jul-08 Bi-Directional P-Channel mosfet PDF

    SI8901

    Abstract: J-STD-020A Si8901EDB MARKING G2
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET


    Original     		Si8901EDB 8901E 08-Apr-05 SI8901 J-STD-020A MARKING G2 PDF

    Si3801

    Abstract: Bi-Directional P-Channel s596
    Text: Si3801DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Battery Switch PRODUCT SUMMARY VSS V –12 rSS(on) (W) IS (A) 0.220 @ VGS = –4.5 V "2.3 0.400 @ VGS = –2.5 V "1.7 FEATURES D Solution for High-Side Battery Disconnect Switching (BDS) D Supports Multiple Battery Applications


    Original     		Si3801DV 08-Apr-05 Si3801 Bi-Directional P-Channel s596 PDF

    Bi-Directional P-Channel mosfet

    Abstract: Si6901DQ
    Text: Si6901DQ New Product Vishay Siliconix Bi-Directional P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) −12 rS1S2(on) (Ω) IS1S2 (A) 0.031 @ VGS = −4.5 V −5.4 0.040 @ VGS = −2.5 V −4.8 0.056 @ VGS = −1.8 V −3.5 D TrenchFETr Power MOSFET


    Original     		Si6901DQ Si6901DQ-T1--E3 18-Jul-08 Bi-Directional P-Channel mosfet PDF

    Bi-Directional P-Channel

    Abstract: 40871
    Text: Si6901DQ New Product Vishay Siliconix Bi-Directional P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) −12 rS1S2(on) (Ω) IS1S2 (A) 0.031 @ VGS = −4.5 V −5.4 0.040 @ VGS = −2.5 V −4.8 0.056 @ VGS = −1.8 V −3.5 D TrenchFETr Power MOSFET


    Original     		Si6901DQ Si6901DQ-T1--E3 08-Apr-05 Bi-Directional P-Channel 40871 PDF

    top 8901

    Abstract: SI8901 bi 370 transistor Bi-Directional P-Channel mosfet J-STD-020A
    Text: Si8901DB New Product Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area PRODUCT SUMMARY


    Original     		Si8901DB Si8901DB-T2--E3 S-41820--Rev. 11-Oct-04 top 8901 SI8901 bi 370 transistor Bi-Directional P-Channel mosfet J-STD-020A PDF

    top 8901

    Abstract: No abstract text available
    Text: Si8901DB New Product Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area PRODUCT SUMMARY


    Original     		Si8901DB Si8901DB-T2--E3 08-Apr-05 top 8901 PDF

    Bi-Directional P-Channel mosfet

    Abstract: No abstract text available
    Text: Si3801DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Battery Switch PRODUCT SUMMARY VSS V –12 rSS(on) (W) IS (A) 0.220 @ VGS = –4.5 V "2.3 0.400 @ VGS = –2.5 V "1.7 FEATURES D Solution for High-Side Battery Disconnect Switching (BDS) D Supports Multiple Battery Applications


    Original     		Si3801DV 08-Apr-05 Bi-Directional P-Channel mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		Si8901EDB 8901E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Siliconix 511

    Abstract: No abstract text available
    Text: SÌ3831DV Vishay Siliconix Bi-Directional P-Ch MOSFET/Power Switch New Product V B* V > Ros (o n (&) ±7 Id W 0 .170 VGg = -4 .5 V ±2.4 0.240 @ VGS = “ 2-5 V ±2,0 & FEATURES • • • • Low rps(on) Symmetrical P-Channel MOSFET Integrated Body Bias For Bi-Directional Blocking


    OCR Scan     		3831DV 988-B000 S-56944-- 23-Nov-98 Siliconix 511 PDF

    Bi-Directional P-Channel mosfet

    Abstract: No abstract text available
    Text: SÌ3801DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Battery Switch New Product PRO DUCT SUM M ARY V m VI ÈSSIM I ’ *<*} 0.220 V q s * -4-5 V ±2.3 0.400 9 VGs » -2.5 V ±1.7 A FEATURES • • • Low »”35(00) Symmetrical P-Channel M O SFET


    OCR Scan     		3801DV Si3801DV 30-Nov 3803DV S-59611 Bi-Directional P-Channel mosfet PDF

    Bi-Directional P-Channel mosfet

    Abstract: No abstract text available
    Text: _ Si3801 DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Battery Switch New Product V* on R s s o m (Q ) 1» (A ) 0.220 O V GS = -4 .5 V ± 2 .3 0.400 @ V 3S = -2 .5 V ± 1 .7 A -1 2 FEATURES Low rss(on) Symmetrical P-Channel MOSFET


    OCR Scan     		Si3801 Si3801DV S-59628-- 09-Nov-98 3801DV Bi-Directional P-Channel mosfet PDF