BI 370 TRANSISTOR E Search Results

BI 370 TRANSISTOR E Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

BI 370 TRANSISTOR E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N914 Abstract: bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030 Text: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AN D V H F AM P LIFIE R The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is p rim a rily a universal switch but it is also an excellent high speed, high gain logic and	OCR Scan	2N914 2N914 G-2030 bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030	PDF
0DG02 Abstract: No abstract text available Text: 45E D ISOCO n C O M P O N E N T S LTD • HôôbSlO G0002S0 7 « I S O ~ V/-53 CNX 82AX .■ r» n ,\|,i,.,„ j,j,- \|.l lf. ,v v, r Æ tiliÆ .M», j- f e - 'f t m-Til1 H Heii'iid>' s'!'j a jl i òn i »/ ì ^ A r » ;ì in, I iv"-’- i k : ' ' y * } : * - Ì ■ »	OCR Scan	G0002S0 0DG02	PDF
i580p Abstract: No abstract text available Text: • a ■ M m w aienow n, mm ic m s e m 580 P leasant St. W a te rto w n , M A 02172 PH: 617 926-0404 FAX: (617) 924-1235 i 2N3251A Features • • • • 60 Volts 200 mAmps Meets MIL-S-19500/323 Collector-Base Voltage 60V Collector Current: 200 mA Fast Switching 370 nS	OCR Scan	2N3251A MIL-S-19500/323 MSC0281A i580p	PDF
bi 370 transistor e Abstract: D44VH1 bi 370 transistor C3875 D44VH10 de3f D44VH4 D44VH D44VH7 Text: 3 875081 6 E SOLI D STATE 01 DE \| 3 ö 7 S 0 f l l DDITID? □ \| D VERY HIGH SPEED T '3 3 ~ l5 D44VH Series NPN POWER TRANSISTORS 30-80 VOLTS 15 AMP, 83 WATTS COMPLEMENTARY TO THE D45VH SERIES The D44VH is an NPN power transistor especially designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where	OCR Scan	D45VH D44VH 3fl750fll bi 370 transistor e D44VH1 bi 370 transistor C3875 D44VH10 de3f D44VH4 D44VH7	PDF
Untitled Abstract: No abstract text available Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6705 ISSUE 1 - NOVEMBER 1995 - C i L . l _ U Bi C i c Z D ei c 2 r c 2 c m r m b2 Z E H 1 N P N 1 E? PNP PARTMARKING DETAIL- T6705 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage	OCR Scan	ZDT6705 T6705 -100mA, 20MHz -10mA, 300ns. ZDT705 Tc17G57fl	PDF
bi 370 transistor Abstract: transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor Text: 0.25um 1P5M Logic 2.5V / 5.0V / 20V updated in 2005.03.21 Features Vdd Core/IO/HV Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization	Original	V/20V 30um2 36um2 bi 370 transistor transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor	PDF
transistor 2028 Abstract: bi 370 transistor MJE 340 transistor BFE540 MBG190 bi 370 transistor e transistor sot353 transistor 2097 aa sot353 Text: Philips Semiconductors Preliminary specification NPN wideband differential transistor FEATURES BFE540 PINNING • Small size • Low voltage operation • Temperature matched • Balanced configuration • hpE matched. PIN SYM BO L 1 2 3 4 5 bi e base 1 emitter	OCR Scan	BFE540 OT353 MBG192 711002b OT353. 71iafi2h transistor 2028 bi 370 transistor MJE 340 transistor BFE540 MBG190 bi 370 transistor e transistor sot353 transistor 2097 aa sot353	PDF
24v ballast Abstract: marking 18T TR marking 18t RV3135B5X Text: T-33-7 7 ‘ RV3135B5X PHILIPS ShE INTERNATIONAL 711DßSb ]> DOHbSDS 243 • PHIN PULSED POWER TRANSISTOR FOR S-BAND RADAR NPN transistor fo r use in common-base pulsed power amplifiers fo r S-band radar 3.1 to 3.5 GHz . Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry and gold sandwich	OCR Scan	T-33-7 RV3135B5X 711005b 24v ballast marking 18T TR marking 18t RV3135B5X	PDF
TRANSISTOR MARKING 3D 6PIN Abstract: bi 370 transistor BFM540 transistor 2028 transistor code t30 Text: Philips Semiconductors Preliminary specification NPN wideband dual transistor BFM540 FEATURES PINNING • Small size PIN SYMBOL • Temperature and hFE matched 1 bi base 1 • Low noise and high gain 2 ei emitter 1 • Gold metallization ensures excellent reliability.	OCR Scan	BFM540 OT363 OT363A OT363. 711005b TRANSISTOR MARKING 3D 6PIN bi 370 transistor BFM540 transistor 2028 transistor code t30	PDF
m02 marking transistor Abstract: m02 marking gain equivalent of SL 100 NPN Transistor marking b4c BFM505 MAM210 bi 370 transistor dual TMA 900 TMA 900 3064 6pin Text: Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 PINNING - SOT363A FEATURES • Small size PIN SYMBOL DESCRIPTION • Temperature and hpE matched 1 bi base 1 • Low noise and high gain 2 01 emitter 1 • High gain at low current and low capacitance at low	OCR Scan	BFM505 OT363 OT363A 7110fl2b OT363. m02 marking transistor m02 marking gain equivalent of SL 100 NPN Transistor marking b4c BFM505 MAM210 bi 370 transistor dual TMA 900 TMA 900 3064 6pin	PDF
bi 370 transistor e Abstract: bi 370 transistor flyback Horizontal frequency kHz 15.625 BUH417 0/bi 370 transistor e Text: rz 7 SGS-THOMSON Ä 7# X iM e iR iQ ilL isirœ œ ! £Ü H 417 CRT HORIZONTAL DEFÌECTÌÌ3N HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR . HIGH BREAKDOWN VOLTAGE CAPABILITY . FULLY INSULATED PACKAGE FOR EASY MOUNTING . LOW SATURATION VOLTAGE . HIGH SWITCHING SPEED	OCR Scan		PDF
2N914 Abstract: transistor 2N914 24si Text: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AND V H F AM PLIFIER The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is prim a rily a universal switch b u t it is also an excellent high speed, high gain logic and memory driver at collector currents up to 500 mA.	OCR Scan	G-2027 G-202, 2N914 2N914 transistor 2N914 24si	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK2884 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE tt- M O S I 2SK2884 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER APPLICATIONS INDUSTRIAL APPLICATIONS TO-220FL Unit in mm • Low Drain-Source ON Resistance : Rd S(ON)= 1*9^ (Typ.)	OCR Scan	2SK2884 O-220FL 20kfl)	PDF
transistor a 1941 Abstract: 2501 optocoupler optocoupler 2501 nec 2501 optocoupler PS2801-1 PS2801-1-F3 PS2801-4 PS2801-1 isolator Text: HIGH ISOLATION VOLTAGE PS2801-1-Y/NL SOP OPTOCOUPLER FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2.5 k Vr.m.s. MIN PS2801-1-Y/NL is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP Small Out-Line Package for high density	Original	PS2801-1-Y/NL PS2801-1-Y/NL PS2801-1-F3 24-Hour transistor a 1941 2501 optocoupler optocoupler 2501 nec 2501 optocoupler PS2801-1 PS2801-1-F3 PS2801-4 PS2801-1 isolator	PDF

2SK2229 Abstract: No abstract text available Text: TOSHIBA 2SK2229 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2229 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ±0.2 APPLICATIONS 4V Gate Drive	OCR Scan	2SK2229	PDF
2SK2507 Abstract: No abstract text available Text: TOSHIBA 2SK2507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2507 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2	OCR Scan	2SK2507 212juÃ 2SK2507	PDF
Untitled Abstract: No abstract text available Text: m m w aien o w n , tvtA m M icro se m i 5oD Pleasant S t Watertown, MA 02172 PH: 817 926-0404 FAX: (617)924-1235 2N3251A Features • • • • 60 Volts 200 mAmps M e e ts M IL -S -1 9500/323 C o lle c to r-B a s e V o lta g e 6 0 V C o lle c to r Current: 2 0 0 m A	OCR Scan	2N3251A	PDF
sz 600 Abstract: service-mitteilungen z570m VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN foto transistor scans-048 "service-mitteilungen" Leipzig Servicemitteilungen 155nu70 Text: SERVICE-MITTEILUNGEN V E 8 IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N 1 r a d io - television 1 AUSGABE: 1V73 DATUM: N o v . 1973 R O M A g A R B g l R H S I H - B B R V I C B Q K S l B A T O R Der Service-Generator C R 0 M A ist einem größeren Kreis von Fach	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: For tediate M im e , Coniaci M i locai Salesperson OPA26Q4 IR W -B R O W N Dual FET-Input, Audio OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW DISTORTION: 0.0003% at 1kHz • • • • • • • LOW N O IS E : 10nV/VFiz • • • • • HIGH SLEW RATE: 25V/^s	OCR Scan	OPA26Q4 10nV/VFiz 20MHz OPA2604	PDF
bi 370 transistor Abstract: bi 370 transistor e transistor 010C semiconductors bi 370 transistor BI 370 BFE520 NPN power transistor spice transistor MJE -1103 mixer 5pin package bi+370+transistor Text: Product specification Philips Semiconductors NPN wideband differential transistor BFE520 PINNING - SOT353B FEATURES • Small size • High power gain at low bias current and voltage • Temperature matched • Balanced configuration • hpE matched • Continues to operate at V qe < 1 V.	OCR Scan	BFE520 OT353 OT353B MBG192 711D62L OT353. 711002b bi 370 transistor bi 370 transistor e transistor 010C semiconductors bi 370 transistor BI 370 BFE520 NPN power transistor spice transistor MJE -1103 mixer 5pin package bi+370+transistor	PDF
bi 370 transistor e Abstract: No abstract text available Text: T O S H IB A 2SK2231 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L2- tt-M O S V 2SK2231 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE APPLICATIONS	OCR Scan	2SK2231 0-12n 20kil) bi 370 transistor e	PDF
AH5E Abstract: ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262 Text: NEC - f — S 7 • Ss— K Compound Transistor FA1A4P 'J □ > S#lF*3ìScNPN:i: f t W t 'iM i ^ m m l R i = 10 kQ , R 2 = 47 kQ ) 2 .8 + 0.2 0.65—8; i s 1.5 O F N 1 A 4 P t => > 7 ° ' ) 9 y 9 ') T l È f f l T 'è i t . II s zj u 9 9 •^ - x f S i ' I E	OCR Scan	PWS10 AH5E ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262	PDF
2SC2340 Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e Text: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers	OCR Scan	L427414 r-33-0S NE568 NE56800 2SC2340 transistor BJ 102 131 NE56800 2SC2339 NE56803 NE56853 NE56857 NE56887 ne56853e	PDF
MGDB-25-H-F Abstract: MGDT25JCF MGDS-25-J-C MGDT-25-H-CF MGDS-25-H-E MGDS-25-J-F MGDT-25-J-CF IEC-62380-TR MGDT-25-H-CE MGDB-25-J-F Text: Hi-Rel DC/DC CONVERTER MGDM-25 : 25W POWER Hi-Rel Grade Single, Bi & Triple Outputs Metallic Case - 1 500 VDC Isolation • 28Vdc input compliant with MIL-STD-704 D/E • Nominal power up to 25 W without derating • Wide temperature range : -40°C/+105°C case	Original	MGDM-25 28Vdc MIL-STD-704 MGDM-25 250KHz FC98-024 MGDB-25-H-F MGDT25JCF MGDS-25-J-C MGDT-25-H-CF MGDS-25-H-E MGDS-25-J-F MGDT-25-J-CF IEC-62380-TR MGDT-25-H-CE MGDB-25-J-F	PDF

BI 370 TRANSISTOR E Search Results

BI 370 TRANSISTOR E Result Highlights (5)

BI 370 TRANSISTOR E Datasheets Context Search

2N914

0DG02

i580p

bi 370 transistor e

Untitled

bi 370 transistor

transistor 2028

24v ballast

TRANSISTOR MARKING 3D 6PIN

m02 marking transistor

bi 370 transistor e

2N914

Untitled

transistor a 1941

2SK2229

2SK2507

Untitled

sz 600

Untitled

bi 370 transistor

bi 370 transistor e

AH5E

2SC2340

MGDB-25-H-F