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    BI 370 TRANSISTOR Search Results

    BI 370 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    BI 370 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TC5022

    Abstract: TC5002 TC5022BP 7 SEGMENT DISPLAY COMMON CATHODE TC-5022
    Text: C2MOS DIGITAL INTEGRATED CIRCUIT TC50026PJC5022BP SIUC0NMONOurHIC- - TC5002BP, TC5022BP BCD TO 7-SEGMEHT DECODER/DRIVER TC5002BP and TC5022BP are decoders to convert BCD code input to the driving signal for 7-segment display element and equipped with NPN transistors as


    OCR Scan     		TC50026PJC5022BP TC5002BP, TC5022BP TC5002BP TC5002BPJC5022BP TC5022 TC5002 7 SEGMENT DISPLAY COMMON CATHODE TC-5022 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC5002BPJC5022BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC5002BP, TC5022BP BCD TO 7-SEGMENT DECODER/DRIVER TC5002BP and TC5022BP are decoders to convert BCD code input to the driving signal for 7-segment display element and equipped with NPN transistors as


    OCR Scan     		TC5002BPJC5022BP TC5002BP, TC5022BP TC5002BP TC5022BP PDF

    tc5022bp

    Abstract: TC5022
    Text: C 2M O S TC5002BP, TC5022BP D IG IT A L IN T E G R A T E D C IR C U IT S IL IC O N M O N O L IT H IC TC5002BP, TC5022BP BCD TO 7-SEGMENT DECODER/DRIVER TC5002BP and TC5022BP are decoders to convert BCD code input to the driving signal for 7-segment display element and equipped with NPN transistors as


    OCR Scan     		TC5002BP, TC5022BP TC5002BP TC5022BP WAVEF01M TC5022 PDF

    TC5022BP

    Abstract: TC5002BP BI 370 TC-5022 tc5022
    Text: TC5002BP, TC5022BP C 2MOS D IG IT A L IN T E G R A T E D CIRC UIT S ILIC O N M O N O LIT H IC TC5002BP, TC5022BP BCD TO 7-SEGMENT DECODER/DRIVER TC5002BP and TC5022BP are decoders to convert BCD code input to the driving signal for 7-segment display element and equipped with NPN transistors as


    OCR Scan     		TC5002BP, TC5022BP TC5002BP TC5022BP BI 370 TC-5022 tc5022 PDF

    2N914

    Abstract: bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030
    Text: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AN D V H F AM P LIFIE R The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is p rim a rily a universal switch but it is also an excellent high speed, high gain logic and


    OCR Scan     		2N914 2N914 G-2030 bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030 PDF

    bi 370 transistor

    Abstract: transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor
    Text: 0.25um 1P5M Logic 2.5V / 5.0V / 20V updated in 2005.03.21 Features ƒ Vdd Core/IO/HV ƒ Starting Material ƒ Well ƒ Isolation ƒ Transistor Gate Length (Ldrawn) ƒ ƒ ƒ ƒ ƒ Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization


    Original     		V/20V 30um2 36um2 bi 370 transistor transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor PDF

    2SC680

    Abstract: 2SC1006 2SC984 2sa564 transistor 2SA564 2SC950 2SC1010 Transistor 2sc1006 transistor 2sa564 2SC952
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		2SC1010 2SC1006 2SC680 2SC1006 2SC984 2sa564 transistor 2SA564 2SC950 2SC1010 Transistor 2sc1006 transistor 2sa564 2SC952 PDF

    bi 370 transistor e

    Abstract: D44VH1 bi 370 transistor C3875 D44VH10 de3f D44VH4 D44VH D44VH7
    Text: 3 875081 6 E SOLI D STATE 01 DE | 3 ö 7 S 0 f l l DDITID? □ | D VERY HIGH SPEED T '3 3 ~ l5 D44VH Series NPN POWER TRANSISTORS 30-80 VOLTS 15 AMP, 83 WATTS COMPLEMENTARY TO THE D45VH SERIES The D44VH is an NPN power transistor especially designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where


    OCR Scan     		D45VH D44VH 3fl750fll bi 370 transistor e D44VH1 bi 370 transistor C3875 D44VH10 de3f D44VH4 D44VH7 PDF

    BI 370

    Abstract: BI 340 bi 240
    Text: F#9#B?J;  F98IJ7D:E<<I<EH8?%JH?#B;7:9ECFED;DJI IF;9?<?97J?EDI C7J;H?7B Standoff - Thermoplastic U.L. 94 V0. Color, Black :;I?=D Channels provide lead separation and lateral stability for components. Molded tabs retain component leads within the standoff for preassembly.


    Original     		PDF

    D600K

    Abstract: B631k b631 k b631k D600K to 126 2SB631 TO-126 D600 d600 2SB6 2Sd600
    Text: Ordering num ber: EN346G 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/120V, 1A Low-Frequency Power Amp Applications i F e a tu re s • High breakdown voltage V ceo 100/120V, High current 1A. •Low saturation voltage, excellent hpE linearity.


    OCR Scan     		EN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2SB631, 2SB631K, D600K 2SD60 D600K B631k b631 k b631k D600K to 126 TO-126 D600 d600 2SB6 2Sd600 PDF

    BFP29

    Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
    Text: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700


    OCR Scan     		fi23SbQS 001Sb74 O-117 BFT98B BFT99A BFR15A, BFS55A, BFP29 BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF PDF

    Untitled

    Abstract: No abstract text available
    Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6705 ISSUE 1 - NOVEMBER 1995 - C i L . l _ U Bi C i c Z D ei c 2 r c 2 c m r m b2 Z E H 1 N P N 1 E? PNP PARTMARKING DETAIL- T6705 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage


    OCR Scan     		ZDT6705 T6705 -100mA, 20MHz -10mA, 300ns. ZDT705 Tc17G57fl PDF

    2N914

    Abstract: transistor 2N914 24si
    Text: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AND V H F AM PLIFIER The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is prim a rily a universal switch b u t it is also an excellent high speed, high gain logic and memory driver at collector currents up to 500 mA.


    OCR Scan     		G-2027 G-202, 2N914 2N914 transistor 2N914 24si PDF

    24v ballast

    Abstract: marking 18T TR marking 18t RV3135B5X
    Text: T-33-7 7 ‘ RV3135B5X PHILIPS ShE INTERNATIONAL 711DßSb ]> DOHbSDS 243 • PHIN PULSED POWER TRANSISTOR FOR S-BAND RADAR NPN transistor fo r use in common-base pulsed power amplifiers fo r S-band radar 3.1 to 3.5 GHz . Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry and gold sandwich


    OCR Scan     		T-33-7 RV3135B5X 711005b 24v ballast marking 18T TR marking 18t RV3135B5X PDF

    7361

    Abstract: JESD97 J-STD-020B
    Text: nemco Low Profile Soldering . There are several important general soldering considerations • Recommended soldering profiles are designed to insure that the temperature of the internal construction of the capacitors does not exceed +220°C. • Positioning capacitors near components radiating heat such as power transistors should be avoided.


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    NTE937

    Abstract: No abstract text available
    Text: NTE937 Integrated Circuit JFET Input Operational Amplifier Description: The NTE937 is a monolithic JFET input operational amplifier in an 8–Lead Metal Can type package incorporating well–matched, high voltage JFET’s on the same chip with standard bi–polar transistors.


    Original     		NTE937 NTE937 1000Hz PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE937 Integrated Circuit JFET Input Operational Amplifier Description: The NTE937 is a monolithic JFET input operational amplifier in an 8–Lead Metal Can type package incorporating well–matched, high voltage JFET’s on the same chip with standard bi–polar transistors.


    Original     		NTE937 NTE937 1000Hz PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2884 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE tt- M O S I 2SK2884 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER APPLICATIONS INDUSTRIAL APPLICATIONS TO-220FL Unit in mm • Low Drain-Source ON Resistance : Rd S(ON)= 1*9^ (Typ.)


    OCR Scan     		2SK2884 O-220FL 20kfl) PDF

    D44VH4

    Abstract: D44VH7 D44VH D44VH1 D44VH10 D45VH
    Text: Power Transistore D44VH Series File Number 15.23 Silicon N-P-N Transistors Complementary to the D45VH Series Features: • F a s t S w itc h in g ts < 700 n s re s is tiv e t f < 200 n s ■ L o w V c C s a f - 0 4 V @ >C = BA TERMINAL DESIGNATIONS The D44VH series of s ilicon n-p-n pow er transistors are


    OCR Scan     		D44VH D45VH D44VH4 D44VH7 D44VH1 D44VH10 PDF

    D44VH7

    Abstract: d44vh10
    Text: D44VH Serles File Number 2350 Silicon N-P-N Transistors Complementary to the D45VH Series Features: • Fast Switching ts < 700 ns resistive tf < 200 ns ■ Low VCE saf < 0.4V @ ;c = 8A TERMINAL DESIGNATIONS The D44VH series of silicon n-p-n power transistors are


    OCR Scan     		D44VH D45VH D44VH7 d44vh10 PDF

    2-10P1B

    Abstract: 2SK2733
    Text: TOSHIBA 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2733 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS tt-MOSIII INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Soree ON Resistance : RdS


    OCR Scan     		2SK2733 594mH 2-10P1B 2SK2733 PDF

    bi 370 transistor e

    Abstract: bi 370 transistor flyback Horizontal frequency kHz 15.625 BUH417 0/bi 370 transistor e
    Text: rz 7 SGS-THOMSON Ä 7# X iM e iR iQ ilL isirœ œ ! £Ü H 417 CRT HORIZONTAL DEFÌECTÌÌ3N HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR . HIGH BREAKDOWN VOLTAGE CAPABILITY . FULLY INSULATED PACKAGE FOR EASY MOUNTING . LOW SATURATION VOLTAGE . HIGH SWITCHING SPEED


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    bi 370 transistor

    Abstract: bi 370 transistor e transistor 010C semiconductors bi 370 transistor BI 370 BFE520 NPN power transistor spice transistor MJE -1103 mixer 5pin package bi+370+transistor
    Text: Product specification Philips Semiconductors NPN wideband differential transistor BFE520 PINNING - SOT353B FEATURES • Small size • High power gain at low bias current and voltage • Temperature matched • Balanced configuration • hpE matched • Continues to operate at V qe < 1 V.


    OCR Scan     		BFE520 OT353 OT353B MBG192 711D62L OT353. 711002b bi 370 transistor bi 370 transistor e transistor 010C semiconductors bi 370 transistor BI 370 BFE520 NPN power transistor spice transistor MJE -1103 mixer 5pin package bi+370+transistor PDF

    semiconductors bi 370

    Abstract: WD 969
    Text: philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    OCR Scan     		BUK7518-55 T0220AB semiconductors bi 370 WD 969 PDF