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BSI BH616UV1610AIG55 ULTRA LOW POWER/HIGH SPEED CMOS SRAM, 1M X 16 BIT, BGA-48-0608
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	BH616UV1610AIG55		955			1 $13.32 10 $13.32 100 $13.32 1000 $6.66 10000 $6.66	Buy Now

BH616UV1610 Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BH616UV1610		Brilliance Semiconductor	Ultra Low Power/High Speed CMOS SRAM 1M x 16 bit		Original	PDF
BH616UV1610		Brilliance Semiconductor	Ultra Low Power/High Speed CMOS SRAM 1M x 16 bit		Original	PDF
BH616UV1610AI		Brilliance Semiconductor	Ultra Low Power/High Speed CMOS SRAM 1M x 16 bit		Original	PDF
BH616UV1610AI55		Brilliance Semiconductor	Ultra Low Power/High Speed CMOS SRAM 1M x 16 bit		Original	PDF
BH616UV1610AI-55		Brilliance Semiconductor	Ultra Low Power/High Speed CMOS SRAM 1M x 16 bit		Original	PDF
BH616UV1610AIG55		Brilliance Semiconductor	Ultra Low Power/High Speed CMOS SRAM 1M x 16 bit		Original	PDF

BH616UV1610 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BGA-48-0608 Abstract: BH616UV1610 BH616UV1610AI Text: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1610 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA Max. at 55ns	Original	BH616UV1610 V/25OC x8/x16 R0201-BH616UV1610 BGA-48-0608 BH616UV1610 BH616UV1610AI	PDF
BGA-48-0608 Abstract: BH616UV1610 BH616UV1610AI Text: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1610 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA Max. at 55ns	Original	BH616UV1610 x8/x16 R0201-BH616UV1610 BGA-48-0608 BH616UV1610 BH616UV1610AI	PDF
Untitled Abstract: No abstract text available Text: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1610 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA Max. at 55ns	Original	BH616UV1610 V/25OC x8/x16 BH616UV16ury R0201-BH616UV1610	PDF
BGA-48-0608 Abstract: BH616UV1610 BH616UV1610AI Text: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BSI BH616UV1610 n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.0V Operation current : 5.0mA at 70ns at 25OC 1.5mA at 1MHz at 25OC Standby current : 3uA at 25OC	Original	BH616UV1610 x8/x16 BH616UV1610 R0201-BH616UV1610 BGA-48-0608 BH616UV1610AI	PDF
TC554161A Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000	PDF
TC55VEM416AXBN Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN	PDF