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    BGB550 Search Results

    BGB550 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BGB550 Infineon Technologies Biased RF-Trans. in SIEGET45 Technology Icmax = 300mA, SCT595 Original PDF
    BGB550 Infineon Technologies Mirror Biased Transistor Original PDF
    BGB550_ Infineon Technologies fT=30GHz, Icmax=300mA, SCT595 Original PDF
    BGB550E6327 Infineon Technologies MMIC, Driver Amplifier Original PDF

    BGB550 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SCT595

    Abstract: BGB550 SCT-595 high voltage current mirror
    Text: NE W BGB550 Medium power broadband amplifier Bias, 3 L ext ~ nH MMIC Features Featuresand andBenefits Benefits C, 4 -mirror mirrorbiased biasedRF RFtransistor transistor internal circuit -collector collectorcurrent currentup uptoto350mA 350mA -low lowoperation


    Original     		PDF BGB550 350mA 100mA IS21I2 --SCT595 SCT595 BGB550 SCT-595 high voltage current mirror

    ic 7912

    Abstract: 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 BGB550 SCT595 TRANSISTOR C 557 B transistor K 1352
    Text: P r e l i m i n a ry d a t a s h e e t , B G B 5 5 0 , J u ly 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-31 Published by Infineon Technologies AG,


    Original     		PDF D-81541 BGB550 10max ic 7912 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 SCT595 TRANSISTOR C 557 B transistor K 1352

    T0529

    Abstract: BGB550 SCT595
    Text: P r e l i m in a r y d a t a s h e e t , B G B 5 5 0 , J a n . 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . @qv‡v‚Ã!   Qˆiyv†urqÃi’ÃDsvr‚ÃUrpu‚y‚tvr†Ã6B


    Original     		PDF BGB550 10max T0529 SCT595