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    Dataman DIL48/BGA119-1 ZIF NAND-1

    The Dataman Dil48/Bga119-1 Zif Nand-1 Is A Device Specific Adapter For Mcp Nand Flash Devices In Bga119 13X10Mm. |Dataman DIL48/BGA119-1 ZIF NAND-1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark DIL48/BGA119-1 ZIF NAND-1 Bulk 1
    • 1 $800.8
    • 10 $778.4
    • 100 $733.6
    • 1000 $733.6
    • 10000 $733.6
    		Buy Now

    BGA119 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K 349

    Abstract: No abstract text available
    Text: 4.050" 1 399 49 99 51 400 2 2 1 B D F 2.750" 351 H 352 K 349 350 M P T 300 301 4 3 150 149 152 151 200 199 6 5 7 A C E G J L N R U 252 250 202 251 249 201 302 299 101 100 52 50 102 Top View TOP INTERFACE Male pins Mates with SK-BGA119Ax-Z-M-0x, SK-LGA119Ax-Z-M-0x sockets


    Original     		PDF SK-BGA119Ax-Z-M-0x, SK-LGA119Ax-Z-M-0x LS-BGA119A-02 SF-BGA119A-B-01 FR4/G10 finish10 PA-BGA119A-01 PA-BGA119A-01 K 349

    SF-BGA119A-B-11

    Abstract: No abstract text available
    Text: D Package Code: BGA119A C 7.62mm [0.300"] See BGA pattern code to the right for actual pattern layout Y 20.32mm [0.800"] X Top View reference only 1.27 mm [0.050"] 2 0.36mm [0.014"] dia. 5.33mm 3.74mm [0.147"] [0.210"] Ø 0.64mm pad [Ø 0.025"] 1.27mm [0.050"]


    Original     		PDF BGA119A FR4/G10 SF-BGA119A-B-11

    43bh

    Abstract: marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF
    Text: SONY CXK77P36E160GB / CXK77P18E160GB 16Mb LW R-L HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 8Mb LW R-L w/ EC HSTL High Speed Synchronous SRAMs (256K x 36 or 512K x 18) 4/42/43/44 Preliminary Description The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words


    Original     		PDF CXK77P36E160GB CXK77P18E160GB CXK77P36E160GB -100uA 43bh marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF

    CXK77L18R160GB-3

    Abstract: CXK77L18R160GB-33 CXK77L18R160GB-4
    Text: SONY CXK77L18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAM 1M x 18 3/33/4 Preliminary Description The CXK77L18R160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer


    Original     		PDF CXK77L18R160GB CXK77L18R160GB BGA-119P-021 BGA119-P-1422 CXK77L18R160GB-3 CXK77L18R160GB-33 CXK77L18R160GB-4

    CXK77Q18B80AGB

    Abstract: CXK77Q36B80AGB CXK77Q36B80AGB-28 CXK77Q36B80AGB-33
    Text: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77Q36B80AGB CXK77Q18B80AGB CXK77Q36B80AGB CXK77Q18B80AGB 640mA 600mA CXK77Q36B80AGB-28 CXK77Q36B80AGB-33

    Untitled

    Abstract: No abstract text available
    Text: CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


    Original     		PDF CXK77B3611AGB CXK77B3611AGB-5/6 CXK77B3611AGB-5 200MHz 167MHz 119TBGA CXK77B3611AGB BGA-119P-01

    CXK77N18R160GB

    Abstract: CXK77N18R160GB-3 CXK77N18R160GB-33 CXK77N18R160GB-4 CXK77N36R160GB CXK77N36R160GB-3 CXK77N36R160GB-33 CXK77N36R160GB-4
    Text: SONY CXK77N36R160GB / CXK77N18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 3/33/4 Preliminary Description The CXK77N36R160GB (organized as 524,288 words by 36 bits) and the CXK77N18R160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77N36R160GB CXK77N18R160GB 512Kb CXK77N36R160GB IDD-33 660mA 550mA 600mA 500mA CXK77N18R160GB CXK77N18R160GB-3 CXK77N18R160GB-33 CXK77N18R160GB-4 CXK77N36R160GB-3 CXK77N36R160GB-33 CXK77N36R160GB-4

    IC51-128

    Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
    Text: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials


    Original     		PDF

    BGA676

    Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
    Text: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18


    Original     		PDF BGA16A1ATTERNS BGA676 BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    BGA-169

    Abstract: TQFP112 BGA169 PQFP144 BGA-421 BQFP-84 qfp132 BGA196 PLCC18 BGA-256
    Text: НАКОНЕЧНИКИ Изображения наконечников Наименование/размер A/B/C/D Наконечники для монтажа (для паяльника PS90) PS, 0.4 мм, конический PS, 0.8 мм, конический


    Original     		PDF SOIC-14 SOIC-16 05x10 BGA-100 16x16 BGA-86 25x17 BGA-121/196/68 15x15 BGA-144 BGA-169 TQFP112 BGA169 PQFP144 BGA-421 BQFP-84 qfp132 BGA196 PLCC18 BGA-256

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77Q36B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 28/33/4 Preliminary Description The CXK77Q36B160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer


    Original     		PDF CXK77Q36B160GB CXK77Q36B160GB IDD-33

    TSMC single port sram

    Abstract: No abstract text available
    Text: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77Q36B80AGB CXK77Q18B80AGB CXK77Q36B80AGB CXK77Q18B80AGB 640mA 600mA TSMC single port sram

    CXK77S36R80AGB-33

    Abstract: 100C CXK77S18R80AGB CXK77S36R80AGB CXK77S36R80AGB-4A marking SBw diode
    Text: SONY CXK77S36R80AGB / CXK77S18R80AGB 8Mb Late Write HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Organization 33/36/4 Preliminary Description The CXK77S36R80AGB (organized as 262,144 words by 36 bits) and the CXK77S18R80AGB (organized as 524,288 words


    Original     		PDF CXK77S36R80AGB CXK77S18R80AGB CXK77S36R80AGB 540ma 620mA 570mA 650mA 250MHz CXK77S36R80AGB-33 100C CXK77S18R80AGB CXK77S36R80AGB-4A marking SBw diode

    sony tsmc

    Abstract: CXK77P18L80AGB CXK77P36L80AGB CXK77P36L80AGB-4 CXK77P36L80AGB-4A
    Text: SONY CXK77P36L80AGB / CXK77P18L80AGB 8Mb LW R-L HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x18 4/42/43/44 Preliminary Description The CXK77P36L80AGB (organized as 262,144 words by 36 bits) and the CXK77P18L80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77P36L80AGB CXK77P18L80AGB CXK77P36L80AGB 200mV -100uA sony tsmc CXK77P18L80AGB CXK77P36L80AGB-4 CXK77P36L80AGB-4A

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


    Original     		PDF

    CXK77N18B160GB-3

    Abstract: CXK77N36B160GB-3 CXK77N36B160GB-33 CXK77N36B160GB-4 BGA-119
    Text: SONY  CXK77N36B160GB / CXK77N18B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 or 1M x 18 3/33/4 Preliminary Description The CXK77N36B160GB (organized as 524,288 words by 36 bits) and the CXK77N18B160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77N36B160GB CXK77N18B160GB CXK77N36B160GB functi540mA 130mA 220mA CXK77N18B160GB-3 CXK77N36B160GB-3 CXK77N36B160GB-33 CXK77N36B160GB-4 BGA-119

    PT740 AB

    Abstract: PM351 transistor 9726 126 EDR-7313 ED-7402 texas instruments data guide manual Hitachi DSAUTAZ006 DO-35 land pattern Silicon Point Contact Mixer Diodes ED-7311
    Text: Hitachi Semiconductor Package Data Book ADE–410–001H 9th Edition March/2001 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher


    Original     		PDF March/2001 standard-856-8650 PT740 AB PM351 transistor 9726 126 EDR-7313 ED-7402 texas instruments data guide manual Hitachi DSAUTAZ006 DO-35 land pattern Silicon Point Contact Mixer Diodes ED-7311

    he804

    Abstract: ati connector HE809 smd diode ED MMSD32032602S-C-xx Microspire MB he807 eurofarad TCN30 MMEE08510804S-C-xx mmfl16016604s-c mmfl16016604s-d
    Text: Edition 1.2. Space- & Military Level Components 2008/08 2 Introduction and Table of Contents If you are working on a program for military, industrial and/or space equipments & need product with extended temperature performance, MSA Components can help. To support the customer needs


    Original     		PDF

    marking code 43b

    Abstract: diode marking code 4n tsmc cmos CXK77P36L80GB-42 CXK77P36L80GB-4A CXK77P36L80GB-4B CXK77P36L80GB CXK77P36L80GB-4
    Text: SONY  CXK77P36L80GB 8Mb LW R-L HSTL High Speed Synchronous SRAMs 256K x 36 4/42/43/44 Preliminary Description The CXK77P36L80GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output latches, and a one-deep write buffer


    Original     		PDF CXK77P36L80GB CXK77P36L80GB 200mV -100uA marking code 43b diode marking code 4n tsmc cmos CXK77P36L80GB-42 CXK77P36L80GB-4A CXK77P36L80GB-4B CXK77P36L80GB-4

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77V1840GB -8 /1 0 /1 2 262,144-Word by 18-bit High Speed CMOS Synchronous Static RAM P f Q l / 'f j j j f j Q f y Description The CXK77V1840GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This


    OCR Scan     		PDF CXK77V1840GB 144-Word 18-bit CXK77V1840GB 144-words 18-bits. provi17 lbfi33 oooooe1234567

    Untitled

    Abstract: No abstract text available
    Text: SONY I CXK77B3611AGB » High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


    OCR Scan     		PDF CXK77B3611AGB CXK77B3611AGB-5/6 CXK77B3611AGB-5 200MHz 167MHz 119TBGA BGA-119P-01

    flash 32 Pin PLCC 16mbit

    Abstract: 398x
    Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: So n y CXK77V1840GB - 8/ 10/12 262,144-Word by 18-bit High Speed CMOS Synchronous Static RAM P r e f jf Y ijf jQ f y Description The CXK77V1840GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This


    OCR Scan     		PDF CXK77V1840GB 144-Word 18-bit CXK77V1840GB 144-words 18-bits. OOOOO012