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    BGA PACKAGE 170 Search Results

    BGA PACKAGE 170 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    BGA PACKAGE 170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MACH4A

    Abstract: JTAG jtag mhz jtag 14 PQFP-144 ispLSI 2128-A M4A5-64 M5A3-384
    Text: 208-Ball BGA 256-Ball BGA 100-Ball BGA 49-Ball BGA 144-Ball BGA ® Fine Pitch BGA ispLSI, MACH, ispGDX & ispGAL Packages ® 7.00 x 7.00 mm 0.8 mm pitch 10.00 x 10.00 mm 0.8 mm pitch 13.00 x 13.00 mm 1.0 mm pitch 17.00 x 17.00 mm 1.0 mm pitch All dimensions refer to package body size


    Original     		PDF 208-Ball 256-Ball 100-Ball 49-Ball 144-Ball 100-Pin 128-Pin 48-Pin 44-Pin 144-Pin MACH4A JTAG jtag mhz jtag 14 PQFP-144 ispLSI 2128-A M4A5-64 M5A3-384

    gk 7031

    Abstract: No abstract text available
    Text: W2637A, W2638A and W2639A LPDDR BGA Probes for Logic Analyzers and Oscilloscopes Data sheet Introduction The W2637A, W2638A and W2639A LPDDR BGA probes provide signal accessibility and probing of embedded memory designs directly at the ball grid array BGA package.


    Original     		PDF W2637A, W2638A W2639A 5990-3892EN gk 7031

    W2639A

    Abstract: lpddr W2638A-101 W3635A N5425 9104a Oscilloscope Probe to PC E2678A specification of Logic Analyzer W2638A
    Text: W2637A, W2638A and W2639A LPDDR BGA Probes for Logic Analyzers and Oscilloscopes Data sheet Introduction The W2637A, W2638A and W2639A LPDDR BGA probes provide signal accessibility and probing of embedded memory designs directly at the ball grid array BGA package.


    Original     		PDF W2637A, W2638A W2639A an120 5990-3892EN W2639A lpddr W2638A-101 W3635A N5425 9104a Oscilloscope Probe to PC E2678A specification of Logic Analyzer

    entek Cu-56

    Abstract: thick bga die size Cu-56 stencil tension BGA "direct replacement" bga rework "ball collapse" height
    Text: APPNote #37 BGA Board Level Assembly and Rework Recommendations 4/19/00 Abstract This application note provides the recommendations for board level assembly for the ballgrid array BGA package family. These recommendations were derived from work done by the Universal BGA/DCA (Ball Grid Array/Direct Chip Attach) Consortium. The


    Original     		PDF

    12x12 bga thermal resistance

    Abstract: SZZA005 micro pitch BGA A113 TMS320VC549 TMS320VC549GGU BGA Ball Crack
    Text: Application Report 1998 MicroStar BGA Printed in U.S.A 11/98 SZZA005 MicroStar BGA Semiconductor Group Package Outline Application Report Kevin Lyne and Charles Williams Prepared by: Tanvir Raquib SZZA005 November 1998 Printed on Recycled Paper IMPORTANT NOTICE


    Original     		PDF SZZA005 thoseI1450 12x12 bga thermal resistance SZZA005 micro pitch BGA A113 TMS320VC549 TMS320VC549GGU BGA Ball Crack

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO: REV: 1.1 VL493T2863E-E7S/E6S General Information 1GB 128MX72 DDR2 SDRAM VLP ECC 200 PIN SO-RDIMM Description Features The VL493T2863E is a 128Mx72 Double Data Rate DDR2 SDRAM high density SO-RDIMM. This memory module consists of nine CMOS 128Mx8 bit DDR2 Synchronous DRAMs in BGA packages, a 25-bit Registered buffer in BGA package, a zero delay PLL clock in BGA package, and a 2K EEPROM in an 8-pin MLF


    Original     		PDF VL493T2863E-E7S/E6S 128MX72 VL493T2863E 128Mx8 25-bit 200-pin 200-pin,

    DDR2-667

    Abstract: DDR2-800 PC2-5300 PC2-6400
    Text: Product Specifications PART NO: REV: 1.1 VL493T2863E-E7S/E6S General Information 1GB 128MX72 DDR2 SDRAM VLP ECC 200 PIN SO-RDIMM Description Features The VL493T2863E is a 128Mx72 Double Data Rate DDR2 SDRAM high density SO-RDIMM. This memory module consists of nine CMOS 128Mx8 bit DDR2 Synchronous DRAMs in BGA packages, a 25-bit Registered buffer in BGA package, a zero delay PLL clock in BGA package, and a 2K EEPROM in an 8-pin MLF


    Original     		PDF VL493T2863E-E7S/E6S 128MX72 VL493T2863E 128Mx8 25-bit 200-pin 200-pin, DDR2-667 DDR2-800 PC2-5300 PC2-6400

    digital rf delay line 2 GHz

    Abstract: No abstract text available
    Text: MAMUSM0008 Digital Switched Delay Line, 1.8 - 2.4 GHz Features V 1.00 BGA Package n 750 pS Dynamic Range, 50 pS Step Size n BGA Package n Parallel Control Interface n Positive Control Logic n Cascadable n No off chip components required Description The M/A-COM MAMUSM0008 is a 0 to 750 pS variable


    Original     		PDF MAMUSM0008 MAMUSM0008 MAMUSM0008TR MAMUSM0008-TB digital rf delay line 2 GHz

    digital rf delay line 2 GHz

    Abstract: rf delay line MAMUSM0008 MAMUSM0008TR 72 vna 10 GHz rf delay line
    Text: MAMUSM0008 Digital Switched Delay Line, 1.8 - 2.4 GHz Features V 1.00 BGA Package n 750 pS Dynamic Range, 50 pS Step Size n BGA Package n Parallel Control Interface n Positive Control Logic n Cascadable n No off chip components required Description The M/A-COM MAMUSM0008 is a 0 to 750 pS variable


    Original     		PDF MAMUSM0008 MAMUSM0008 digital rf delay line 2 GHz rf delay line MAMUSM0008TR 72 vna 10 GHz rf delay line

    0.65mm pitch BGA

    Abstract: BGA reflow guide BGA Solder Ball 0.35mm BGA Package 0.35mm pitch SSYZ015 C6000 TMS320C6000 TMS320C6202 0.35mm BGA fanout
    Text: Application Report SPRA429A TMS320C6000 BGA Manufacturing Considerations David Bell C6000 Applications Team Abstract When designing with a high-density BGA package, it is important to be aware of different techniques that aid in the quality of the manufacture. It is important to match the copper land


    Original     		PDF SPRA429A TMS320C6000 C6000 0.65mm pitch BGA BGA reflow guide BGA Solder Ball 0.35mm BGA Package 0.35mm pitch SSYZ015 TMS320C6202 0.35mm BGA fanout

    BGA reflow guide

    Abstract: C6000 TMS320C6000 TMS320C6202 0.35mm BGA fanout 0.65mm pitch BGA
    Text: Application Report SPRA429B TMS320C6000 BGA Manufacturing Considerations David Bell C6000 Applications Team Abstract When designing with a high-density BGA package, it is important to be aware of different techniques that aid in the quality of the manufacture. It is important to match the copper land


    Original     		PDF SPRA429B TMS320C6000 C6000 BGA reflow guide TMS320C6202 0.35mm BGA fanout 0.65mm pitch BGA

    V54C3128

    Abstract: LA5A6
    Text: MOSEL VITELIC V54C3128 16/80/40 4V(BGA) 128Mbit SDRAM 3.3 VOLT, BGA PACKAGE 8M X 16 16M X 8 32M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3128 128Mbit LA5A6

    MSAB

    Abstract: No abstract text available
    Text: MOSEL VITELIC V54C3128 16/80/40 4(BGA) 128Mbit SDRAM 3.3 VOLT, BGA PACKAGE 8M X 16 16M X 8 32M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3128 128Mbit MSAB

    LA5A6

    Abstract: V54C3128
    Text: MOSEL VITELIC V54C3128 16/80/40 4V(BGA) 128Mbit SDRAM 3.3 VOLT, BGA PACKAGE 8M X 16 16M X 8 32M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3128 128Mbit LA5A6

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL393T2863E-E7M/E6M/D5M REV: 1.1 General Information 1GB 128Mx72 DDR2 SDRAM VLP ECC REGISTERED DIMM 240-PIN Description The VL393T2863E is a 128Mx72 DDR2 SDRAM high density DIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a 25-bit registered buffer in BGA package, a


    Original     		PDF VL393T2863E-E7M/E6M/D5M 128Mx72 240-PIN VL393T2863E 128Mx8 25-bit 240-pin 240-pin, 80TYP

    H5PS2G83AFR-S6C

    Abstract: CAPACITOR CK 158 VN0810 DDR2-800 PC2-6400 DDR2 samsung pc2-6400 samsung dram H5PS2G83AFR
    Text: Product Specifications PART NO.: VL491T2863B-E7S REV: 1.3 General Information 1GB 128Mx72 DDR2 SDRAM ULP ECC UNBUFFERED SO-CDIMM 200-PIN Description The VL491T2863B is a 128Mx72 DDR2 SDRAM high density SO-CDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a zero delay PLL clock in BGA package, and a


    Original     		PDF VL491T2863B-E7S 128Mx72 200-PIN VL491T2863B 128Mx8 200-pin 200-pin, VN-081009 H5PS2G83AFR-S6C CAPACITOR CK 158 VN0810 DDR2-800 PC2-6400 DDR2 samsung pc2-6400 samsung dram H5PS2G83AFR

    240-PIN

    Abstract: DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400
    Text: Product Specifications PART NO.: VL393T2863E-E7M/E6M/D5M REV: 1.1 General Information 1GB 128Mx72 DDR2 SDRAM VLP ECC REGISTERED DIMM 240-PIN Description The VL393T2863E is a 128Mx72 DDR2 SDRAM high density DIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a 25-bit registered buffer in BGA package, a


    Original     		PDF VL393T2863E-E7M/E6M/D5M 128Mx72 240-PIN VL393T2863E 128Mx8 25-bit 240-pin 240-pin, 80TYP DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400

    H5PS2G83AFR-S6C

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL491T2863B-E7S REV: 1.3 General Information 1GB 128Mx72 DDR2 SDRAM ULP ECC UNBUFFERED SO-CDIMM 200-PIN Description The VL491T2863B is a 128Mx72 DDR2 SDRAM high density SO-CDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a zero delay PLL clock in BGA package, and a


    Original     		PDF VL491T2863B-E7S 128Mx72 200-PIN VL491T2863B 128Mx8 200-pin 200-pin, VN-081009 H5PS2G83AFR-S6C

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Revision 1.1 (19 Mar. 2008) - Add BGA package - Modify the waveform of Power up & Initialization Sequence - Modify the θ value of TSOPII package dimension


    Original     		PDF M13S128168A

    Transistor 5C5

    Abstract: No abstract text available
    Text: IC71V08F32xS08 IC71V16F32xS08 Document Title 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP - 32 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM Revision History Revision No History Draft Date 0A 0B Initial Draft Add 73 ball BGA package


    Original     		PDF IC71V08F32xS08 IC71V16F32xS08 MCP001-0B 73-ball IC71V16F32CS08-85B73 IC71V16F32DS08-85B73 Transistor 5C5

    Untitled

    Abstract: No abstract text available
    Text: TMS320C6472 SPRS612G – JUNE 2009 – REVISED JULY 2011 1.1 www.ti.com CTZ/ZTZ BGA Package Bottom View The TMS320C6472 devices are designed for a package temperature range of 0°C to 85°C (commercial temperature range) or -40°C to 100°C (extended temperature range).


    Original     		PDF TMS320C6472 SPRS612G TMS320C6472 500-MHz 625-MHz 737-Pin

    TS512MQR72V4T

    Abstract: No abstract text available
    Text: 240PIN DDR2 400 Registered DIMM 4096MB With 256Mx4 CL3 TS512MQR72V4T Description Placement The TS512MQR72V4T is a 512M x 72bits DDR2-400 Registered DIMM. The TS512MQR72V4T consists of 18 pcs st.512Mx4bits DDR2 SDRAMs in 56 ball BGA package, 2 pcs register in 96 ball uBGA package, 1 pcs


    Original     		PDF 240PIN 4096MB 256Mx4 TS512MQR72V4T TS512MQR72V4T 72bits DDR2-400 512Mx4bits 240-pin

    TXS0104EZXUR

    Abstract: TXS01xx
    Text: TXS0104E 4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN APPLICATIONS www.ti.com SCES651C – JUNE 2006 – REVISED JULY 2007 FEATURES GXU/ZXU BGA PACKAGE (TOP VIEW) A TERMINAL ASSIGNMENTS (GXU/ZXU Package) B C 4 3 2 1 A B C 4 A4 GND B4 3 A3


    Original     		PDF TXS0104E SCES651C 000-V A114-B) A115-A) 15-kV TXS0104EZXUR TXS01xx

    TXS0104EPWR

    Abstract: YF04E TXS0104ED TXS0104EYZTR TXS0104EZXUR YF04
    Text: TXS0104E 4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN APPLICATIONS www.ti.com SCES651C – JUNE 2006 – REVISED JULY 2007 FEATURES GXU/ZXU BGA PACKAGE (TOP VIEW) A TERMINAL ASSIGNMENTS (GXU/ZXU Package) B C 4 3 2 1 A B C 4 A4 GND B4 3 A3


    Original     		PDF TXS0104E SCES651C 000-V A114-B) A115-A) 15-kV TXS0104EPWR YF04E TXS0104ED TXS0104EYZTR TXS0104EZXUR YF04