Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BGA MOSFET Search Results

    BGA MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    BGA MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    202P

    Abstract: F202 FDZ202P
    Text: FDZ202P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ202P FDZ202P 202P F202

    202P

    Abstract: F202 FDZ202P
    Text: FDZ202P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ202P FDZ202P 202P F202

    FDZ204P

    Abstract: No abstract text available
    Text: FDZ204P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ204P minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ204P FDZ204P

    FDZ201N

    Abstract: No abstract text available
    Text: FDZ201N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ201N minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ201N FDZ201N

    203N

    Abstract: FDZ203N
    Text: FDZ203N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ203N FDZ203N 203N

    Untitled

    Abstract: No abstract text available
    Text: FDZ203N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ203N FDZ203N

    Untitled

    Abstract: No abstract text available
    Text: FDZ291P P-Channel 1.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ291P FDZ291P

    203N

    Abstract: FDZ203N
    Text: FDZ203N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ203N FDZ203N 203N

    Untitled

    Abstract: No abstract text available
    Text: FDZ203N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ203N FDZ203N

    Untitled

    Abstract: No abstract text available
    Text: FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ206P FDZ206P

    DIODE A46

    Abstract: No abstract text available
    Text: FDZ293P P-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ293P FDZ293P DIODE A46

    th 157

    Abstract: FDZ291P
    Text: FDZ291P P-Channel 1.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ291P FDZ291P th 157

    FDZ294N

    Abstract: No abstract text available
    Text: FDZ294N N-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ294N minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ294N FDZ294N

    FDZ204P

    Abstract: No abstract text available
    Text: FDZ204P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ204P minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ204P FDZ204P

    155oC

    Abstract: No abstract text available
    Text: FDZ203N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a


    Original     		PDF FDZ203N FDZ203N 155oC

    Untitled

    Abstract: No abstract text available
    Text: FDZ202P P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a


    Original     		PDF FDZ202P FDZ202P

    FDZ204P

    Abstract: No abstract text available
    Text: FDZ204P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ204P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a


    Original     		PDF FDZ204P FDZ204P

    Untitled

    Abstract: No abstract text available
    Text: FDZ293P P-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ293P FDZ293P

    Untitled

    Abstract: No abstract text available
    Text: FDZ299P P-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ299P FDZ299P

    FDZ298N

    Abstract: No abstract text available
    Text: FDZ298N N-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ298N minimizes both PCB space This BGA MOSFET embodies a


    Original     		PDF FDZ298N FDZ298N

    FDZ206P

    Abstract: No abstract text available
    Text: FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a


    Original     		PDF FDZ206P FDZ206P

    JEDEC bga case outline

    Abstract: 202P F202 FDZ202P
    Text: FDZ202P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a


    Original     		PDF FDZ202P FDZ202P JEDEC bga case outline 202P F202

    FDZ206P

    Abstract: No abstract text available
    Text: FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a


    Original     		PDF FDZ206P FDZ206P

    FC-09A

    Abstract: F63TNR FDZ204P FDZ6966
    Text: FDZ204P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ204P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a


    Original     		PDF FDZ204P FDZ204P FC-09A F63TNR FDZ6966