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    BGA 2J MARKING CODE Search Results

    BGA 2J MARKING CODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy
    OP221GSZ Analog Devices SO-8 MARKED AS \\OP221G\\ Visit Analog Devices Buy

    BGA 2J MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BGA 2J marking code

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect


    Original
    PDF MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 100-Pin Apr/6/00 Jan/18/00 Nov/11/99 BGA 2J marking code

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect


    Original
    PDF 165Vor MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18D

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect


    Original
    PDF MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 100-Pin Apr/6/00 Jan/18/00 Nov/11/99

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect


    Original
    PDF MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 100-Pin 165Vor Apr/6/00 Jan/18/00

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect


    Original
    PDF MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 100-Pin 165Vor Apr/6/00 Jan/18/00

    78 ball fbga thermal resistance

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect


    Original
    PDF Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18P MT58L1MY18P 78 ball fbga thermal resistance

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1


    Original
    PDF MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 100-Pin Apr/6/00 Jan/18/00 Nov/11/99

    4c 8184

    Abstract: BGA 2J marking code 18-SE
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • •


    Original
    PDF Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18F 4c 8184 BGA 2J marking code 18-SE

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1


    Original
    PDF MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 100-Pin Apr/6/00 Jan/18/00 Nov/11/99

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • •


    Original
    PDF MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 100-Pin Apr/6/00 Jan/18/00 119-pin

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1


    Original
    PDF MT58L1MY18F, MT58V1MV18F, MT58L512Y32F. Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18F MT58L1MY18F

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •


    Original
    PDF MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 100-Pin Apr/6/00 Jan/18/00 119-pin

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •


    Original
    PDF Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18P

    GVT71128DA36

    Abstract: GVT71256DA18
    Text: ADVANCE INFORMATION GALVANTECH, INC. GVT71128DA36/GVT71256DA18 128K X 36/256K X 18 SYNCHRONOUS SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 128K x 36 SRAM 256K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family


    Original
    PDF GVT71128DA36/GVT71256DA18 36/256K GVT71128DA36 GVT71256DA18 072x36 144x18 71128DA36 71256DA18

    marking code SA

    Abstract: No abstract text available
    Text: ADVANCE M I in P n N 256K x 18/128K x 36 LVTTL, PIPELINED LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • Fast cycle times 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations Single +3.3V +0.3V/-0.2V power supply (Vdd)


    OCR Scan
    PDF 18/128K 119-bump, MT59L256U8P marking code SA

    ic MARKING J LA 8P

    Abstract: No abstract text available
    Text: ADVANCE M in P n M I u 2 5 256K x 18/128K x 36 I/O, PIPELINED LATE W RITE SRAM V M T 5 9 L2 5 6 V 18 P M T 5 9 L 128 V 3 6 P I A T E U M I 1_ WRITE SRAM FEATURES • Fast cycle times 4.5ns, 5ns, 6ns and 7ns • 256K x 18 or 128K x 36 configurations • Single + 3 .3 V + 0 .3 V /-0 .2 V p o w e r su p p ly (V dd)


    OCR Scan
    PDF 18/128K MT59L256V18P ic MARKING J LA 8P

    MICRON POWER RESISTOR 4d

    Abstract: No abstract text available
    Text: ADVANCE 256K X 18/128K x 36 HSTL, LA T C H E D LA TE W RITE SR AM |V/|IC=RO N A C k J Ih L A T F WRITE SRAM FEATURES • Fast cycle times 5ns, 5.5ns and 6ns • 256K x 18 or 128K x 36 configurations • Single +3.3V +0.3V/-0.2V pow er supply (Vdd) • Separate isolated output buffer supply (V ddQ)


    OCR Scan
    PDF 18/128K MT59L256H18L MT59L128H36L. MICRON POWER RESISTOR 4d

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE |V/|C RQ N I A T E l _ m l_ MT59L256V18L MT59L128V36L WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations Single +3.3V +0.3V/-0.2V p o w e r s u p p ly (V d d )


    OCR Scan
    PDF 18/128K MT59L256V18L MT59L128V36L 16/12SK MT59L25eV18LpmQ

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 256K x 18/128K x 36 HSTL, LATCHED LATE WRITE SRAM MT59L256H18L MT59L128H36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations


    OCR Scan
    PDF 18/128K MT59L256H18L MT59L128H36L

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 256K x 18/128K x 36 2.5V I/O, LATCHED LATE WRITE SRAM MT59L256V18L MT59L128V36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations


    OCR Scan
    PDF 18/128K MT59L256V18L MT59L128V36L 18/128KX MT59L256V18L

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 256K x 18/128K x 36 LVTTL, LATCHED LATE WRITE SRAM MT59L256L18L MT59L128L36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • Fast cycle tim es 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations


    OCR Scan
    PDF 18/128K MT59L256L18L MT59L128L36L

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 256K x 18/128K x 36 HSTL, PIPELINED LATE WRITE SRAM MT59L256H18P MT59L128H36P 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • • Fast cycle times 4.5ns, 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations


    OCR Scan
    PDF 18/128K MT59L256H18P MT59L128H36P

    micron cmos 1988

    Abstract: No abstract text available
    Text: ADVANCE 256K X 18/128K x 36 2.5V I/O, FLOW -THROUGH LATE WRITE SRAM l^ ic n o N Dual Clock and Single Clock FEATURES • Fast cycle times 4.5ns, 5ns, 6ns and 7ns • 256K x 18 or 128K x 36 configurations • Single + 3 .3 V + 0 .3 V /-0 .2 V p o w e r su p p ly (V dd)


    OCR Scan
    PDF 18/128K MT59L256V18F MT59L128V36F MT50L2S6V18F micron cmos 1988

    Untitled

    Abstract: No abstract text available
    Text: AD VA NC E 25 6 K x 1 8 / 1 2 8K x 36 LVTTL, PIPELINED LATE WRITE SRAM MICRON U TECHNOLOGY, INC. 4.5Mb LATE WRITE SRAM MT59L256L18P MT59L128L36P FEATURES * Fast cycle times 5ns, 6ns and 7ns * 256K x 18 or 128K x 36 configurations * Single +3.3V +0.3V/-0.2V power supply (Vdd)


    OCR Scan
    PDF 119-bump, JEDE20 18/128K MT59L256L18P