Untitled
Abstract: No abstract text available
Text: ADVANCE 256K x 18/128K x 36 HSTL, LATCHED LATE WRITE SRAM MT59L256H18L MT59L128H36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations
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18/128K
MT59L256H18L
MT59L128H36L
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Untitled
Abstract: No abstract text available
Text: AD VA NC E 25 6 K x 1 8 / 1 2 8K x 36 HSTL, L A T C H E D LATE WRITE SRAM MICRON U TECHNOLOGY, INC. MT59L256H18L MT59L128H36L 4.5Mb LATE WRITE SRAM FEATURES * * * * * * * * * * * * * * * * * * * Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations
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MT59L256H18L
MT59L128H36L
59L256H18L
MT59L128H36L
119-bump,
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MICRON POWER RESISTOR 4d
Abstract: No abstract text available
Text: ADVANCE 256K X 18/128K x 36 HSTL, LA T C H E D LA TE W RITE SR AM |V/|IC=RO N A C k J Ih L A T F WRITE SRAM FEATURES • Fast cycle times 5ns, 5.5ns and 6ns • 256K x 18 or 128K x 36 configurations • Single +3.3V +0.3V/-0.2V pow er supply (Vdd) • Separate isolated output buffer supply (V ddQ)
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18/128K
MT59L256H18L
MT59L128H36L.
MICRON POWER RESISTOR 4d
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