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    BFY 50 Search Results

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    BFY 50 Price and Stock

    Texas Instruments DLP6500BFYE

    Display Drivers & Controllers DLP® 0.65 1080p s600 DMD 350-CPGA 0 to 90
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    Mouser Electronics DLP6500BFYE 26
    • 1 $892.62
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    Texas Instruments DLP5500BFYA

    Display Drivers & Controllers 0.55 XGA DMD
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    Mouser Electronics DLP5500BFYA 5
    • 1 $622.78
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    Pulse Electronics Corporation BBFY00100505221YHP

    Ferrite Beads Chilisin EMI BEAD FILETER For GHz Band General Use
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    Mouser Electronics BBFY00100505221YHP
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    Pulse Electronics Corporation BBFY00100505121YHP

    Ferrite Beads Chilisin EMI BEAD FILETER For GHz Band General Use
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    Mouser Electronics BBFY00100505121YHP
    • 1 $0.15
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    Pulse Electronics Corporation BBFY00100505301YHN

    Ferrite Beads Chilisin EMI BEAD FILETER For GHz Band General Use
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    BFY 50 Datasheets (62)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFY50 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8 Original PDF
    BFY50 Philips Semiconductors Small-signal Transistors Original PDF
    BFY50 Philips Semiconductors NPN medium power transistors - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8 Original PDF
    BFY50 Semelab Medium Power Amplifiers NPN Silicon Planar Transistor - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8 Original PDF
    BFY50 STMicroelectronics MEDIUM POWER AMPLIFIER Original PDF
    BFY50 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BFY50 Crimson Semiconductor Transistor Selection Guide Scan PDF
    BFY50 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    BFY50 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    BFY50 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    BFY50 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    BFY50 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    BFY50 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BFY50 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    BFY50 Micro Electronics Semiconductor Device Data Book Scan PDF
    BFY50 Micro Electronics Semiconductor Devices Scan PDF
    BFY50 Motorola Motorola Transistor Datasheets Scan PDF
    BFY50 Motorola The European Selection Data Book 1976 Scan PDF
    BFY50 Motorola European Master Selection Guide 1986 Scan PDF
    BFY50 Mullard Quick Reference Guide 1977/78 Scan PDF

    BFY 50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle Hermetic Jam Nut D-Hole Mount Receptacle, Threaded Coupling II M83723/89Y / M83723/89P BTY/BFY/BNY-19 I Fully Mated Band† G Dia. SJT 38999 III PART # .781/ .761 Max. 19.83/19.32 Max. N Contact Stickout


    Original     		PDF MIL-DTL-83723, M83723/89Y M83723/89P BTY/BFY/BNY-19 EN2997Y7 ESC10YE3 ESC11YE3 brea35

    Untitled

    Abstract: No abstract text available
    Text: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle BTY/BFY/BNY-17 N Contact Stickout ESC11YE2 26482 Solderwell Contacts J Coupling Thread Optional Eyelet Contacts 5015 † When fully mated with plug this band will be covered. Band is red on military types; can be red or blue on


    Original     		PDF MIL-DTL-83723, BTY/BFY/BNY-17 ESC11YE2

    A03 transistor

    Abstract: BFY280
    Text: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥


    Original     		PDF Q97302026 Q97111414 BFY280 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor

    marking A04

    Abstract: BFY181 p 181 V Q62702F1715
    Text: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz


    Original     		PDF Q62702F1607 Q62702F1715 BFY181 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 marking A04 p 181 V Q62702F1715

    on semiconductor marking code A04

    Abstract: marking A04 C BFY182
    Text: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz


    Original     		PDF Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 on semiconductor marking code A04 marking A04 C

    A03 transistor

    Abstract: microwave transducer BFY196 BFY 36 transistor
    Text: HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz


    Original     		PDF Q62702F1684 BFY196 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor microwave transducer BFY 36 transistor

    A03 transistor

    Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
    Text: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz


    Original     		PDF Q62702F1609 Q62702F1713 BFY183 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor BFy 90 transistor microwave transducer marking code microwave

    BFy 90 transistor

    Abstract: No abstract text available
    Text: BFY 183 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at co currents from 2mA to 30mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.3 dB at 2 GHz • esa Space Qualified


    Original     		PDF

    A03 transistor

    Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
    Text: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz


    Original     		PDF Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor Q62702F-1610 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor

    Untitled

    Abstract: No abstract text available
    Text: BFY 50 • BFY 51 • BFY 52 NPN MEDIUM POWER M - SILICON PLANAR EPITAXIAL TRANSISTOR I\/IIC=:F?<= E L _ E C 3T R C 3 I M I C : S M ECHANICAL OUTLINE FEA TU RES APPLICATIONS • Low S a tu ra tio n V o lta g e V c E . a i ) • • • 0 . 5 V t yp @ I A


    OCR Scan     		PDF BFY50 BOX69477 924ZS, 309022fâ

    BFY33

    Abstract: BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613
    Text: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are d o u b le -d iffu se d planar NPN silicon RF-transistors in a case 5 C 3 DIN 41873 (T O -3 9 ). The co lle cto r is electrically connected to the case.


    OCR Scan     		PDF BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY33 BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613

    BFY34

    Abstract: BFY 34 transistor transistor BFY46 BFY46 BFY33 Q60206-Y46 1613B
    Text: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new development NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are double-diffused planar NPN silicon R F-transistors in a case 5 C 3 DIN 41873 (TO-39). The collector is electrically connected to thecase.


    OCR Scan     		PDF BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34 BFY 34 transistor transistor BFY46 BFY46 BFY33 Q60206-Y46 1613B

    BFY50

    Abstract: BFY51 BFY50-BFY51 BFY 52 transistor
    Text: BFY 50 BFY 51 BFY 52 SILICON PLANAR NPN M E D IU M -P O W E R A M P L IF IE R S The BFY50, BFY51 and E1FY52 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are intended fo r general purpose linear and switching applications.


    OCR Scan     		PDF BFY50, BFY51 EIFY52 70x1CT6 130x1er6 150mA BFY50 BFY50-BFY51 BFY 52 transistor

    BFY 52 transistor

    Abstract: BFY50 BOX69477 022deg BFY 39 transistor
    Text: BFY 50 • BFY 51 • BFY 52 NPN MEDIUM POWER M - SILICON PLANAR EPITAXIAL TRANSISTOR MICRO EL.ECTRDNIC5 MECHANICAL OUTLINE APPLICATIONS FEA TU R ES • Low Satu ratio n V o lta g e VcE *afc * • •0 .5 V typ @ IA • Audio A m p lifier O u tp u t Stag e


    OCR Scan     		PDF IN/11 80Vmin BFY50 i50mA BOX69477 BFY 52 transistor 022deg BFY 39 transistor

    BFY50

    Abstract: BFY 50 55x1 BFY51 BFY52 BFY 39
    Text: BFY 50 BFY 51 SILICON PLANAR NPN BFY 52 MEDIUM-POWER AMPLIFIERS The B F Y 5 0 , B F Y 51 and B F Y 5 2 are silico n planar e p ita x ia l NPN tran sisto rs in Jedec T O -3 9 m etal case. T he y are inte nd e d fo r general purpose linear and sw itc h in g a p p lica tio n s.


    OCR Scan     		PDF BFY50, BFY51 BFY52 i30xicr6 BFY50 BFY 50 55x1 BFY 39

    BFY86

    Abstract: db347 Scans-0010448
    Text: Nicht für Neuentwicklungen Not for new developments BFY 85 • BFY 86 Silizium-NPN-Epitaxial-Planar-Doppeltransistoren Silicon NPN Epitaxial Planar Double Transistors Anwendungen: In Differenzverstärkern Applications: In diffe re n tia l am plifiers Besondere Merkmale:


    OCR Scan     		PDF

    BFY34

    Abstract: BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613
    Text: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.


    OCR Scan     		PDF BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY34 BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613

    BFY 34 transistor

    Abstract: transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV
    Text: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new development NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.


    OCR Scan     		PDF BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY 34 transistor transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV

    BFY56

    Abstract: BFY56A BFY 56A ft bfy BFY 20
    Text: BFY56 BFY56A SILICON PLANAR NPN A M P L IF IE R S A N D SW ITCHES The BFY 56 and BFY 56A are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are designed fo r am plifier and switching applications over a wide range o f voltage and current.


    OCR Scan     		PDF BFY56 BFY56 BFY56A 1x10-" BFY56A BFY 56A ft bfy BFY 20

    BFY83

    Abstract: bfy82
    Text: BFY 83 SILICON PLANAR NPN DUAL, H IG H -VO LTA G E AM PLIFIER The BFY 82 is a six term inal device containing tw o isolated silicon planar epitaxial NPN transistors in Jedec T O -7 7 metal case. The good thermal tracking over a wide current and temperature range, offers the circ u it designer matched transistors w ith specified performance


    OCR Scan     		PDF BFY83 100MA BFY83 bfy82

    BFY 94 transistor

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor BFY 90 • For broadband amplifiers up to 1 GHz and non-saturated switches at collector currents from 1 mA to 20 mA. € CECC-type available: GEGC 50002/253. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F297 235bQ5 0Db74Bl BFY 94 transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 193 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • f T = 8 GHz, F = 2.3 dB at 2 GHz


    OCR Scan     		PDF Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 BFY193 GXM05552

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz


    OCR Scan     		PDF Q97302026 Q97111414 BFY280 de/semiconductor/products/35/35 de/semiconductor/products/35/353 BFY280 GXM05552

    BFY88

    Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
    Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration


    OCR Scan     		PDF i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288