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    BFY 420 Search Results

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    BFY 420 Price and Stock

    Infineon Technologies AG BFY420 (P)

    Trans GP BJT NPN 4.5V 0.035A 4-Pin Micro-X (Alt: SP000011414)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik BFY420 (P) 26 Weeks 1
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    Infineon Technologies AG BFY420(ES)

    Trans GP BJT NPN 4.5V 0.035A 4-Pin Micro-X (Alt: SP000011419)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik BFY420(ES) 26 Weeks 1
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    BFY 420 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFY420 Infineon Technologies BFY420 Original PDF
    BFY420 (ES) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 4.5 V; IC(max): 35.0 mA; Ptot (max): 160.0 mW; fT (typ): 22.0 GHz; Original PDF
    BFY420ES Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY420 (H) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 4.5 V; IC(max): 35.0 mA; Ptot (max): 160.0 mW; fT (typ): 22.0 GHz; Original PDF
    BFY420H Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY420 (P) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 4.5 V; IC(max): 35.0 mA; Ptot (max): 160.0 mW; fT (typ): 22.0 GHz; Original PDF
    BFY420P Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY420 (S) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 4.5 V; IC(max): 35.0 mA; Ptot (max): 160.0 mW; fT (typ): 22.0 GHz; Original PDF
    BFY420S Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF

    BFY 420 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2520P

    Abstract: schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420
    Text: GaAs Components HiRel Discretes and Microwave Semiconductors 11.4.1 Table 2 HiRel Silicon Diodes General Purpose Silicon Schottky Diodes Tj,max = 150 °C Max. Ratings Component type variant BAS 40-T1 VR IF Characteristics VBR VF Package RF CD Detail Spec. Type Variant


    Original     		PDF 40-T1 70-T1 70B-HP HPAC140 2520P schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420

    MMIC Amplifier Micro-X marking 420

    Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices


    Original     		PDF EHA07485 EHA07486 MWP-25 EHA07487 EHA07488 MWP-35 EHA07489 EHA07490 MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"

    727 diode

    Abstract: 716 transistor diode 716 BFY 34 transistor
    Text: GaAs Components HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 11.1 Preliminary Remarks 716 11.2 Introduction to HiRel and Space Qualified Devices 716


    Original     		PDF HPAC140, MWP-25, MWP-35 727 diode 716 transistor diode 716 BFY 34 transistor

    microwave transistor bfy193

    Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG


    Original     		PDF MWP-25 MWP-35 microwave transistor bfy193 BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420

    SIEMENS MICROWAVE RADIO 8 GHz

    Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG


    Original     		PDF MWP-25 MWP-35 SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING

    GaAs Amplifier Micro-X Marking k

    Abstract: gaas fet micro-X Package marking GaAs Amplifier Micro-X BFY193 BFY40 CFY66 BFY420 BFY193 Microx Microwave Semiconductors transistor "micro-x" "marking" 3
    Text: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components


    Original     		PDF HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k gaas fet micro-X Package marking GaAs Amplifier Micro-X BFY193 BFY40 CFY66 BFY420 BFY193 Microx Microwave Semiconductors transistor "micro-x" "marking" 3

    siemens spc 2

    Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
    Text: HiRel Discrete and HiRel Microwave Semiconductors 1. Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation August 1998 . They are


    Original     		PDF de/semiconductor/products/35/35 de/semiconductor/products/35/353 MWP-25 MWP-35 siemens spc 2 SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67

    GaAs Amplifier Micro-X Marking k

    Abstract: LNA ku-band Silicon Bipolar Transistor MICRO-X CLY30 CLY27 microwave fet IC gaas fet micro-X Package gaas fet micro-X Package marking SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X "Marking k"
    Text: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components


    Original     		PDF HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k LNA ku-band Silicon Bipolar Transistor MICRO-X CLY30 CLY27 microwave fet IC gaas fet micro-X Package gaas fet micro-X Package marking SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X "Marking k"

    Untitled

    Abstract: No abstract text available
    Text: 1.5SMCJ SERIES 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       1500W Peak Pulse Power Dissipation 5.0V – 440V Standoff Voltage Uni- and Bi-Directional Versions Available


    Original     		PDF SMC/DO-214AB, MIL-STD-750,

    marking code BEV

    Abstract: marking code BGL 1.5SMCJ Series
    Text: 1.5SMCJ SERIES WTE POWER SEMICONDUCTORS Pb 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features ! Glass Passivated Die Construction ! ! ! ! ! ! 1500W Peak Pulse Power Dissipation B 5.0V – 170V Standoff Voltage Uni- and Bi-Directional Versions Available


    Original     		PDF SMC/DO-214AB SMC/DO-214AB, MIL-STD-750, marking code BEV marking code BGL 1.5SMCJ Series

    tvs SMC MARKING

    Abstract: bfq 85 bfw glass bi 370 transistor bfg 370
    Text: 1.5SMCJ SERIES WTE POWER SEMICONDUCTORS Pb 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Glass Passivated Die Construction 1500W Peak Pulse Power Dissipation 5.0V – 170V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Capability


    Original     		PDF SMC/DO-214AB SMC/DO-214AB, MIL-STD-750, tvs SMC MARKING bfq 85 bfw glass bi 370 transistor bfg 370

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


    Original     		PDF D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download

    gaas fet micro-X Package marking

    Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
    Text: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and


    OCR Scan     		PDF

    727 diode

    Abstract: diode 716 transistor 717 TRANSISTOR 726 716 transistor cfy transistor 35 CFY
    Text: G aAs Components Infineon •»ihnciogift* HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Component Types Package Types Title Page 11.1 Preliminary Remarks 716 11.2 Introduction to HiRel and Space Qualified Devices


    OCR Scan     		PDF BFY180, HPAC140, MWP-25, MWP-35 CGY41 727 diode diode 716 transistor 717 TRANSISTOR 726 716 transistor cfy transistor 35 CFY

    Untitled

    Abstract: No abstract text available
    Text: G F1A T H RU GF1M G LA SS PASSIVATED SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES ♦ Plastic package has Undeiwriters Laboratory Flammability Classification 94 V-0 D O -214B A ♦ Id eal for surface m ounted autom otive ap plica­


    OCR Scan     		PDF -214B

    SGSP474

    Abstract: No abstract text available
    Text: 30E t • 7iai237 0030021 S ■ _ / = 7 S G S - T H O M S O N 5 T ? ' ,H t " SM S G S P 4 7 4 ^ 7 # [ÜDffi Q [E[L[i(g¥^(ó)iD(gÍ SG SP 475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 fi


    OCR Scan     		PDF 7iai237 SGSP474 SGSP475 100kHz 0Q30Q33 SGSP474

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


    OCR Scan     		PDF semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072

    SDT 9202

    Abstract: bdx 338 BU 450 bdx
    Text: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74


    OCR Scan     		PDF

    bpx28

    Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
    Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten


    OCR Scan     		PDF

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF

    TFK 680 CNY 70

    Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
    Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.


    OCR Scan     		PDF

    diac D30

    Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
    Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED


    OCR Scan     		PDF OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551

    m6ad

    Abstract: 027s transistor ZR 720 relay 383NR 47ZR A2ZA TRANSFORMER 545 13 005 00 0416NR07 thyristor BT 138 Oneida Electronic MFG
    Text: TO ONEIDA ELECTRONIC MFG INC 9 OD 00408 ÌÌF| 1 7^2335 000D 40Û S o T-tK MNR Varistors M elai Oxide Type Metal Oxide Varistors General ELECTRICAL CHARACTERISTICS MNR Varistors have a non-linear voltage/current character­ istic as expressed by the relationship:


    OCR Scan     		PDF 000D40Ã m6ad 027s transistor ZR 720 relay 383NR 47ZR A2ZA TRANSFORMER 545 13 005 00 0416NR07 thyristor BT 138 Oneida Electronic MFG