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    onsemi BFY39

    NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
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    BFY 39 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFY39 Crimson Semiconductor Transistor Selection Guide Scan PDF
    BFY39 Micro Electronics Semiconductor Device Data Book Scan PDF
    BFY39 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFY39 Unknown Cross Reference Datasheet Scan PDF
    BFY39 Unknown Transistor Replacements Scan PDF
    BFY39 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFY39 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFY39 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFY39 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFY39 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BFY39 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    BFY39 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    BFY39 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    BFY39 National Semiconductor PRO ELECTRON SERIES - JFET Scan PDF
    BFY39 Raytheon Selection Guide 1977 Scan PDF
    BFY39 Semico Audio Frequency Small Signal Transistors Scan PDF
    BFY39-1 Crimson Semiconductor Transistor Selection Guide Scan PDF
    BFY39-1 Unknown Cross Reference Datasheet Scan PDF
    BFY39-1 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFY39/1 Unknown Shortform Transistor Datasheet Guide Short Form PDF

    BFY 39 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle BTY/BFY/BNY-17 N Contact Stickout ESC11YE2 26482 Solderwell Contacts J Coupling Thread Optional Eyelet Contacts 5015 † When fully mated with plug this band will be covered. Band is red on military types; can be red or blue on


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    MIL-DTL-83723, BTY/BFY/BNY-17 ESC11YE2 PDF

    EN2997Y1

    Abstract: ESC10YE1
    Text: MIL-DTL-83723, Series III, Pyle I ESC10YE1 SJT EN2997Y1 / YE1 N Contact Stickout N Contact Stickout .281 7.13 38999 BTY/BFY/BNY-14 .109/.079 2.76/2.00 .062/.047 1.57/1.19 A M83723/90Y / M83723/90P II .904 Max. 22.96 Max. PART # III Hermetic Solder Mount/Weld Mount Receptacle,


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    MIL-DTL-83723, ESC10YE1 EN2997Y1 BTY/BFY/BNY-14 M83723/90Y M83723/90P ESC11YE1 ESC10YE1 PDF

    bfy 40

    Abstract: STM 64 butterfly 7 pin GPO 80 Km upc 577 NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8564LE stm 64 laser diode 19pin NX8566LE
    Text: PRELIMINARY DATA SHEET LASER DIODE NX8560SJ Series EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS DESCRIPTION The NX8560SJ Series is an Electro-Absorption EA modulator and wavelength monitor integrated, 1 550 nm Multiple Quantum Well (MQW)


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    NX8560SJ bfy 40 STM 64 butterfly 7 pin GPO 80 Km upc 577 NX8560LJ NX8560MC NX8560MCS NX8564LE stm 64 laser diode 19pin NX8566LE PDF

    thermistor 220

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back


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    NX8560LJ thermistor 220 PDF

    NX8300BE-CC

    Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8563LA NX8563LAS
    Text: DATA SHEET LASER DIODE NX8563LA Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LA Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Single Mode


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    NX8563LA NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8563LAS PDF

    NX8567SA

    Abstract: NX8560MC Series NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8567SAM NX8567SAS 4 channel mini filter DWDM
    Text: PRELIMINARY DATA SHEET LASER DIODE NX8567SA Series EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 240 km, 360 km, 600 km APPLICATIONS DESCRIPTION The NX8567SA Series is an Electro-Absorption EA modulator and


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    NX8567SA NX8560MC Series NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8567SAM NX8567SAS 4 channel mini filter DWDM PDF

    10 gb laser diode

    Abstract: NX8566LE NX8560MC Series bfy 421
    Text: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator


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    NX8564/8565/8566LE NX8564LE-BC/CC) 10 gb laser diode NX8566LE NX8560MC Series bfy 421 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator


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    NX8564/8565/8566LE NX8564LE-BC/iconductor PDF

    NR3470MU

    Abstract: NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8564LE NX8565LE STM-64 10 gb laser diode NX8560MC Series
    Text: DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back


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    NX8560LJ NR3470MU NX8560MC NX8560MCS NX8560SJ NX8564LE NX8565LE STM-64 10 gb laser diode NX8560MC Series PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back


    Original
    NX8560LJ PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator


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    NX8564/8565/8566LE NX8564LE-dle PDF

    BFY34

    Abstract: BFY 34 transistor transistor BFY46 BFY46 BFY33 Q60206-Y46 1613B
    Text: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new development NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are double-diffused planar NPN silicon R F-transistors in a case 5 C 3 DIN 41873 (TO-39). The collector is electrically connected to thecase.


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    BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34 BFY 34 transistor transistor BFY46 BFY46 BFY33 Q60206-Y46 1613B PDF

    BFY50

    Abstract: BFY51 BFY50-BFY51 BFY 52 transistor
    Text: BFY 50 BFY 51 BFY 52 SILICON PLANAR NPN M E D IU M -P O W E R A M P L IF IE R S The BFY50, BFY51 and E1FY52 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are intended fo r general purpose linear and switching applications.


    OCR Scan
    BFY50, BFY51 EIFY52 70x1CT6 130x1er6 150mA BFY50 BFY50-BFY51 BFY 52 transistor PDF

    BFY34

    Abstract: BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613
    Text: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.


    OCR Scan
    BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY34 BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613 PDF

    BFY56

    Abstract: BFY56A BFY 56A ft bfy BFY 20
    Text: BFY56 BFY56A SILICON PLANAR NPN A M P L IF IE R S A N D SW ITCHES The BFY 56 and BFY 56A are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are designed fo r am plifier and switching applications over a wide range o f voltage and current.


    OCR Scan
    BFY56 BFY56 BFY56A 1x10-" BFY56A BFY 56A ft bfy BFY 20 PDF

    BFY45

    Abstract: BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4
    Text: BFY45 Not for new d e v e lo p m e n t NPN Transistor for lower-pow er switching applications The B F Y 45 is a silicon double-diffused NPN planar transistor in a case 5 C 3 DIN 41873 TO-39 . The collector is electrically connected to the case. The BFY 45 is designed for low power, high voltage switching applications, e.g. for


    OCR Scan
    BFY45 BFY45 60206-Y45 BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4 PDF

    BFY56

    Abstract: BFY 39 transistor 300S6 BFY56A H21E
    Text: BFY 56 A NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L - General purpose Usage général Dissipation Case TO -39 ~ See outline drawing C8-7 on last pages Variation de dissipation B o îtie r


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    BFY56A BFY56 BFY 39 transistor 300S6 BFY56A H21E PDF

    transistor bf 184

    Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
    Text: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958


    OCR Scan
    5109B O-92a transistor bf 184 pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451 PDF

    bs33

    Abstract: 35-130 BSS 130 BSS 97 BFR20 BFR21 BFX39 BFX95A BFX97A BFY56
    Text: PROFESSIONAL TRANSISTORS > _1 ro E UJ lL JZ. W U mA < £ _u > PACKAGE >» ~c > ia lc RANGE TYPE an d Q. uoJ UJ o (SU ) 'H i E > (SU) P O L A R IT Y General purpose switches BFR20 BFR21 NPN 35 _ 130 450 90/250 0.13 150 0.1-1000 T O -39 NPN 70 - 130 450 40/70


    OCR Scan
    BS33A BFR20 BFR21 BFX39 100TO-39 BFX97A 15/2N 16/2N 17/2N 18/2N bs33 35-130 BSS 130 BSS 97 BFX95A BFY56 PDF

    bss17

    Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
    Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN


    OCR Scan
    BFR10 BFR36 BFR96* 97/2N 98/TO-39 BFX97A 15/2N 16/2N 17/2N 18/2N bss17 BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97 PDF

    BFX97A

    Abstract: BFR11 BFR20 BFR21 BFX39 BFX94A BFX95A BFX96A BSX19 bsx30
    Text: PROFESSIONAL TRANSISTORS continued a. C o >* ~e E —I LU Ü. x: _ B F R 10 NPN 40 BFR11 BFX94A NPN NPN 40 30 - BFX95A BFX96A BFX97A BSS 26 BSV 15 BSV 16 BSV 59 BSV 77 BSV 89 BSV 90 BSV 91 BSV 92 BSV 95 BSX12 BSX 19 BSX 20 BSX 26 BSX 27 BSX 28 BSX 29 BSX 30


    OCR Scan
    ES33A BFR11 BFX94A BFX95A BFX96A BFX97A OTO-39 15/2N 16/2N BFR20 BFR21 BFX39 BSX19 bsx30 PDF

    UOJ 220

    Abstract: BFR18 bfx74a BFR16 BFW43 BFW44 BFX38 BFX39 BFX40 BFX41
    Text: 01 — - — — — — - 051? 051? 081? 081? 081? 03£ 0Z£ 081? 081? OOZ 003 005 009 90 OQL 09 L 99 99 99 — — — — 00 00 00 00 00 L 001 — 98 98 98 817 — 817 98 98 91 91 OZ OZ g n n L L L 9 9 91 10 01 8L 8L 91 91 91 9L 9 9 01 01 9ZL ZL 9'0 90


    OCR Scan
    T0-18 BFR16 NPNTO-39 UOJ 220 BFR18 bfx74a BFW43 BFW44 BFX38 BFX39 BFX40 BFX41 PDF

    tfk 339

    Abstract: tfk 337 BFY 39 transistor BFY56 bfy56a BEsat11 BFY 20
    Text: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein, V erstärker und Schalter Applications: General, am plifiers and switches Abmessungen in mm Dimensions in mm K o llektor m it Gehäuse verbunden C o lle cto r co n n ecte d with case


    OCR Scan
    cases25Â tfk 339 tfk 337 BFY 39 transistor BFY56 bfy56a BEsat11 BFY 20 PDF

    BSY84

    Abstract: C 337-40 33740 npn 1W 40V to39 CA500 c 33740 BSY86 BC337 BC341 850mW
    Text: General Purpo/e Tran/i/ter/ r T Y P E NO. PD NPN >C BVc b O l v Ceo b v E bo @ T A = 2 5 °C v C E s a t @ I c / l B h p E @ V C E @ *C Cob m ax. m ax. m in ./max. f T @ •c C A SE m in. <§> <§> 1 20 V 120V 120V 120V 90V 80V 80V 80V 80V 60V 6V 6V 6V


    OCR Scan
    850mW 150mA 120MHz BSY84 C 337-40 33740 npn 1W 40V to39 CA500 c 33740 BSY86 BC337 BC341 PDF