on semiconductor marking code A04
Abstract: marking A04 C BFY182
Text: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz
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Original
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Q62702F1608
Q62702F1714
BFY182
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
on semiconductor marking code A04
marking A04 C
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PDF
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BFY-26
Abstract: BFY26
Text: BFY 一 26 型浮标液位变送器 一概述 BFY-26 型浮标液位计是一种简易的液位测量仪表。它适用于石油化工系统中有腐蚀性 介质的槽、罐；油田、油库等工业的平底锥盖拱顶容器以及一般企业、民用建筑的水塔 水
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BFY-26
300mm
BFY-26
BFY26
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PDF
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Untitled
Abstract: No abstract text available
Text: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle Hermetic Jam Nut D-Hole Mount Receptacle, Threaded Coupling II M83723/89Y / M83723/89P BTY/BFY/BNY-19 I Fully Mated Band† G Dia. SJT 38999 III PART # .781/ .761 Max. 19.83/19.32 Max. N Contact Stickout
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Original
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MIL-DTL-83723,
M83723/89Y
M83723/89P
BTY/BFY/BNY-19
EN2997Y7
ESC10YE3
ESC11YE3
brea35
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PDF
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DN65
Abstract: dbt3 LB830S GB3836 DN40 DN50 BFY 83
Text: P 普通型 电动浮筒液位变送器 BFY 01 Z 智能型 概述： 概述 BFY－01 系列电动浮筒液位（界面）变送器是国家八﹒五重点科技攻关项目产品，该表是 连续测量液体液位的本质安全型防爆仪表，防爆标志为 iaⅡСΤ（2－5）
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Original
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BFY01
LB830S
LB805
24VDC
420mADC
4PN10
0PN16
420mA
JB/T822
GB3836--83
DN65
dbt3
LB830S
GB3836
DN40
DN50
BFY 83
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PDF
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A03 transistor
Abstract: BFY280
Text: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥
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Original
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Q97302026
Q97111414
BFY280
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
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PDF
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marking A04
Abstract: BFY181 p 181 V Q62702F1715
Text: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz
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Original
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Q62702F1607
Q62702F1715
BFY181
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
marking A04
p 181 V
Q62702F1715
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PDF
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A03 transistor
Abstract: microwave transducer BFY196 BFY 36 transistor
Text: HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz
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Original
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Q62702F1684
BFY196
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
microwave transducer
BFY 36 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle BTY/BFY/BNY-17 N Contact Stickout ESC11YE2 26482 Solderwell Contacts J Coupling Thread Optional Eyelet Contacts 5015 † When fully mated with plug this band will be covered. Band is red on military types; can be red or blue on
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Original
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MIL-DTL-83723,
BTY/BFY/BNY-17
ESC11YE2
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PDF
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A03 transistor
Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
Text: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz
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Original
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Q62702F1609
Q62702F1713
BFY183
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
BFy 90 transistor
microwave transducer
marking code microwave
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PDF
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BFY33
Abstract: BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613
Text: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are d o u b le -d iffu se d planar NPN silicon RF-transistors in a case 5 C 3 DIN 41873 (T O -3 9 ). The co lle cto r is electrically connected to the case.
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OCR Scan
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BFY33,
BFY34
BFY46
Q60206-Y33
Q60206-Y34
Q60206-Y46
BFY34,
BFY33
BFY34
BFY46
BFY 39 transistor
BFY 34 transistor
transistor BFY46
BFY 33 transistor
N1613
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PDF
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Untitled
Abstract: No abstract text available
Text: BFY 50 • BFY 51 • BFY 52 NPN MEDIUM POWER M - SILICON PLANAR EPITAXIAL TRANSISTOR I\/IIC=:F?<= E L _ E C 3T R C 3 I M I C : S M ECHANICAL OUTLINE FEA TU RES APPLICATIONS • Low S a tu ra tio n V o lta g e V c E . a i ) • • • 0 . 5 V t yp @ I A
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OCR Scan
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BFY50
BOX69477
924ZS,
309022fâ
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PDF
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BFY34
Abstract: BFY 34 transistor transistor BFY46 BFY46 BFY33 Q60206-Y46 1613B
Text: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new development NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are double-diffused planar NPN silicon R F-transistors in a case 5 C 3 DIN 41873 (TO-39). The collector is electrically connected to thecase.
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OCR Scan
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BFY33,
BFY34
BFY46
Q60206-Y33
Q60206-Y34
Q60206-Y46
BFY34
BFY 34 transistor
transistor BFY46
BFY46
BFY33
Q60206-Y46
1613B
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PDF
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bfy50
Abstract: FY51
Text: M O TO R OL A SC X S T R S /R F 12E D I b3b72S4 aGöbMäS B | BFYSO thru BFY52 M A X IM U M RATINGS R atin g S ym b o l BFY BFY BFY . 50 81 52 U n it C ollector-E m itter Voltage VcEO 35 30 20 Vdc C ollector-Base Voltage VCBO 80 60 40 Vdc E m itter-Base Voltage
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OCR Scan
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b3b72S4
BFY52
b3b75S4
BFY50
37-rt
FY51-52
FY51
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PDF
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BFY50
Abstract: BFY51 BFY50-BFY51 BFY 52 transistor
Text: BFY 50 BFY 51 BFY 52 SILICON PLANAR NPN M E D IU M -P O W E R A M P L IF IE R S The BFY50, BFY51 and E1FY52 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are intended fo r general purpose linear and switching applications.
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OCR Scan
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BFY50,
BFY51
EIFY52
70x1CT6
130x1er6
150mA
BFY50
BFY50-BFY51
BFY 52 transistor
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PDF
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BFY50
Abstract: BFY 50 55x1 BFY51 BFY52 BFY 39
Text: BFY 50 BFY 51 SILICON PLANAR NPN BFY 52 MEDIUM-POWER AMPLIFIERS The B F Y 5 0 , B F Y 51 and B F Y 5 2 are silico n planar e p ita x ia l NPN tran sisto rs in Jedec T O -3 9 m etal case. T he y are inte nd e d fo r general purpose linear and sw itc h in g a p p lica tio n s.
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OCR Scan
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BFY50,
BFY51
BFY52
i30xicr6
BFY50
BFY 50
55x1
BFY 39
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PDF
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BFY86
Abstract: db347 Scans-0010448
Text: Nicht für Neuentwicklungen Not for new developments BFY 85 • BFY 86 Silizium-NPN-Epitaxial-Planar-Doppeltransistoren Silicon NPN Epitaxial Planar Double Transistors Anwendungen: In Differenzverstärkern Applications: In diffe re n tia l am plifiers Besondere Merkmale:
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OCR Scan
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PDF
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BFY34
Abstract: BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613
Text: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.
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OCR Scan
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BFY33,
BFY34
BFY46
Q60206-Y33
Q60206-Y34
Q60206-Y46
BFY34,
BFY34
BFY33
BFY46
transistor BFY46
BFY 34 transistor
BFY 39 transistor
BFY 33 transistor
N1613
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PDF
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BFY 34 transistor
Abstract: transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV
Text: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new development NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.
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OCR Scan
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BFY33,
BFY34
BFY46
Q60206-Y33
Q60206-Y34
Q60206-Y46
BFY34,
BFY 34 transistor
transistor BFY46
BFY 39 transistor
BFY46
BFY34
BFY33
BFV33
BFY 33 transistor
N1613
01BV
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PDF
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BFY56
Abstract: BFY56A BFY 56A ft bfy BFY 20
Text: BFY56 BFY56A SILICON PLANAR NPN A M P L IF IE R S A N D SW ITCHES The BFY 56 and BFY 56A are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are designed fo r am plifier and switching applications over a wide range o f voltage and current.
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OCR Scan
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BFY56
BFY56
BFY56A
1x10-"
BFY56A
BFY 56A
ft bfy
BFY 20
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PDF
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BFY83
Abstract: bfy82
Text: BFY 83 SILICON PLANAR NPN DUAL, H IG H -VO LTA G E AM PLIFIER The BFY 82 is a six term inal device containing tw o isolated silicon planar epitaxial NPN transistors in Jedec T O -7 7 metal case. The good thermal tracking over a wide current and temperature range, offers the circ u it designer matched transistors w ith specified performance
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OCR Scan
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BFY83
100MA
BFY83
bfy82
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PDF
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BFY 94 transistor
Abstract: No abstract text available
Text: SIEM ENS NPN Silicon RF Transistor BFY 90 • For broadband amplifiers up to 1 GHz and non-saturated switches at collector currents from 1 mA to 20 mA. € CECC-type available: GEGC 50002/253. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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Q62702-F297
235bQ5
0Db74Bl
BFY 94 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 193 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • f T = 8 GHz, F = 2.3 dB at 2 GHz
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OCR Scan
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Q62702F1610
Q62702F1701
BFY193
de/semiconductor/products/35/35
de/semiconductor/products/35/353
BFY193
GXM05552
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz
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OCR Scan
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Q97302026
Q97111414
BFY280
de/semiconductor/products/35/35
de/semiconductor/products/35/353
BFY280
GXM05552
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PDF
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BFY88
Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration
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OCR Scan
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i200Rb
D0DS332
ft-11
569-GS
000s154
hal66
if-11
BFY88
Telefunken u 237
transistor marking code 2C
BFY 88
telefunken C80
ui77
silicon npn planar rf transistor sot 143
IMB 06 C
BFY 52 transistor
95288
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PDF
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